JPS6467970A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6467970A
JPS6467970A JP22577187A JP22577187A JPS6467970A JP S6467970 A JPS6467970 A JP S6467970A JP 22577187 A JP22577187 A JP 22577187A JP 22577187 A JP22577187 A JP 22577187A JP S6467970 A JPS6467970 A JP S6467970A
Authority
JP
Japan
Prior art keywords
source
drain electrodes
active layer
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22577187A
Other languages
Japanese (ja)
Inventor
Tadahisa Yamaguchi
Koichi Hiranaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22577187A priority Critical patent/JPS6467970A/en
Publication of JPS6467970A publication Critical patent/JPS6467970A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To obtain a thin film transistor in which no step is generated on an active layer and which has excellent electric characteristics by forming the active layer on a substrate and forming a gate insulating film, and source, drain electrodes thereon. CONSTITUTION:An active layer 3 is formed on an insulating substrate 1, and a gate insulating film 4, a gate electrode G, ohmic contact layers 2s, 2d, source, drain electrodes S, D are formed thereon. That is, the gate electrode G and the source, drain electrodes S, D are disposed on the same sides with respect to the layer 3. Thus, no step is formed not only on the layer 3 but on the film 4, the electrode G. As a result, the concentration of an electric field due to the step, the increase in a leakage current, a reduction in an ON current, the concentration of a stress, a reduction in a stability, etc., do not occur.
JP22577187A 1987-09-08 1987-09-08 Thin film transistor Pending JPS6467970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22577187A JPS6467970A (en) 1987-09-08 1987-09-08 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22577187A JPS6467970A (en) 1987-09-08 1987-09-08 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6467970A true JPS6467970A (en) 1989-03-14

Family

ID=16834538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22577187A Pending JPS6467970A (en) 1987-09-08 1987-09-08 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6467970A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208476A (en) * 1990-06-08 1993-05-04 Seiko Epson Corporation Low leakage current offset-gate thin film transistor structure
WO2001075981A1 (en) * 2000-04-04 2001-10-11 Matsushita Electric Industrial Co.,Ltd. Thin-film semiconductor device and method for manufacturing the same
JP2007141974A (en) * 2005-11-15 2007-06-07 Kobe Steel Ltd Diamond semiconductor element and manufacturing method thereof
EP2369371A2 (en) 2010-03-10 2011-09-28 Fujifilm Corporation Wafer lens array and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208476A (en) * 1990-06-08 1993-05-04 Seiko Epson Corporation Low leakage current offset-gate thin film transistor structure
WO2001075981A1 (en) * 2000-04-04 2001-10-11 Matsushita Electric Industrial Co.,Ltd. Thin-film semiconductor device and method for manufacturing the same
JP2007141974A (en) * 2005-11-15 2007-06-07 Kobe Steel Ltd Diamond semiconductor element and manufacturing method thereof
EP2369371A2 (en) 2010-03-10 2011-09-28 Fujifilm Corporation Wafer lens array and method for manufacturing the same

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