NL188434C - Elektrodestructuur. - Google Patents
Elektrodestructuur.Info
- Publication number
- NL188434C NL188434C NLAANVRAGE8001226,A NL8001226A NL188434C NL 188434 C NL188434 C NL 188434C NL 8001226 A NL8001226 A NL 8001226A NL 188434 C NL188434 C NL 188434C
- Authority
- NL
- Netherlands
- Prior art keywords
- electrodestructure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5560179A JPS5949712B2 (ja) | 1979-05-07 | 1979-05-07 | 半導体整流ダイオ−ド |
JP5560079 | 1979-05-07 | ||
JP5560179 | 1979-05-07 | ||
JP5560079A JPS5949711B2 (ja) | 1979-05-07 | 1979-05-07 | 電極付半導体装置 |
JP11321679A JPS5637683A (en) | 1979-09-04 | 1979-09-04 | Semiconductor rectifying device |
JP11321679 | 1979-09-04 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8001226A NL8001226A (nl) | 1980-11-11 |
NL188434B NL188434B (nl) | 1992-01-16 |
NL188434C true NL188434C (nl) | 1992-06-16 |
Family
ID=27295641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE8001226,A NL188434C (nl) | 1979-05-07 | 1980-02-29 | Elektrodestructuur. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4587547A (xx) |
CA (1) | CA1150417A (xx) |
DE (1) | DE3008034A1 (xx) |
FR (1) | FR2456389B1 (xx) |
GB (1) | GB2050694B (xx) |
NL (1) | NL188434C (xx) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5860577A (ja) * | 1981-10-07 | 1983-04-11 | Hitachi Ltd | 半導体装置 |
JPS5929469A (ja) * | 1982-08-11 | 1984-02-16 | Hitachi Ltd | 半導体装置 |
EP0130669A1 (en) * | 1983-04-30 | 1985-01-09 | Kabushiki Kaisha Toshiba | Gate turn off thyristor with mesh cathode structure |
DE3628857A1 (de) * | 1985-08-27 | 1987-03-12 | Mitsubishi Electric Corp | Halbleitereinrichtung |
DE3633161A1 (de) * | 1986-09-30 | 1988-04-07 | Licentia Gmbh | Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone |
JPH0795592B2 (ja) * | 1987-04-14 | 1995-10-11 | 株式会社豊田中央研究所 | 静電誘導型半導体装置 |
JP2706120B2 (ja) * | 1988-02-12 | 1998-01-28 | アゼア ブラウン ボヴェリ アクチェンゲゼルシャフト | Gtoパワーサイリスタ |
DE3939324A1 (de) * | 1989-11-28 | 1991-05-29 | Eupec Gmbh & Co Kg | Leistungs-halbleiterbauelement mit emitterkurzschluessen |
US5119148A (en) * | 1989-11-29 | 1992-06-02 | Motorola, Inc. | Fast damper diode and method |
JP2663679B2 (ja) * | 1990-04-20 | 1997-10-15 | 富士電機株式会社 | 伝導度変調型mosfet |
JP3321185B2 (ja) * | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
DE4201183A1 (de) * | 1992-01-17 | 1993-07-22 | Eupec Gmbh & Co Kg | Leistungsdiode |
US5369291A (en) * | 1993-03-29 | 1994-11-29 | Sunpower Corporation | Voltage controlled thyristor |
US5360990A (en) * | 1993-03-29 | 1994-11-01 | Sunpower Corporation | P/N junction device having porous emitter |
DE4342482C2 (de) * | 1993-12-13 | 1995-11-30 | Siemens Ag | Schnelle Leistungshalbleiterbauelemente |
US5705830A (en) * | 1996-09-05 | 1998-01-06 | Northrop Grumman Corporation | Static induction transistors |
WO1999013512A1 (de) * | 1997-09-10 | 1999-03-18 | Infineon Technologies Ag | Halbleiterbauelement mit einer driftzone |
JP4017258B2 (ja) * | 1998-07-29 | 2007-12-05 | 三菱電機株式会社 | 半導体装置 |
WO2001006569A1 (fr) * | 1999-07-15 | 2001-01-25 | Rohm Co., Ltd. | Dispositif a semiconducteur comprenant un transistor a effet de champ mos |
DE102004005084B4 (de) * | 2004-02-02 | 2013-03-14 | Infineon Technologies Ag | Halbleiterbauelement |
US20050275065A1 (en) * | 2004-06-14 | 2005-12-15 | Tyco Electronics Corporation | Diode with improved energy impulse rating |
DE102004044141A1 (de) * | 2004-09-13 | 2006-03-30 | Robert Bosch Gmbh | Halbleiteranordnung zur Spannungsbegrenzung |
JP2006295062A (ja) * | 2005-04-14 | 2006-10-26 | Rohm Co Ltd | 半導体装置 |
JP2010283132A (ja) | 2009-06-04 | 2010-12-16 | Mitsubishi Electric Corp | 半導体装置 |
JP5321669B2 (ja) | 2010-11-25 | 2013-10-23 | 株式会社デンソー | 半導体装置 |
US8809902B2 (en) * | 2011-10-17 | 2014-08-19 | Infineon Technologies Austria Ag | Power semiconductor diode, IGBT, and method for manufacturing thereof |
US9123828B2 (en) | 2013-11-14 | 2015-09-01 | Infineon Technologies Ag | Semiconductor device and method for forming a semiconductor device |
JP6443267B2 (ja) | 2015-08-28 | 2018-12-26 | 株式会社デンソー | 半導体装置 |
WO2017149607A1 (ja) * | 2016-02-29 | 2017-09-08 | 三菱電機株式会社 | 半導体装置 |
JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
US11127737B2 (en) * | 2019-02-12 | 2021-09-21 | Macom Technology Solutions Holdings, Inc. | Monolithic multi-I region diode limiters |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL122949C (xx) * | 1958-06-25 | 1900-01-01 | ||
NL278058A (xx) * | 1961-05-26 | |||
US3395320A (en) * | 1965-08-25 | 1968-07-30 | Bell Telephone Labor Inc | Isolation technique for integrated circuit structure |
CH452710A (de) * | 1966-12-29 | 1968-03-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung eines steuerbaren Halbleiterventils mit pnpn Struktur mit einer mit Kurzschlüssen versehenen Emitterzone |
CH474154A (de) * | 1967-02-10 | 1969-06-15 | Licentia Gmbh | Halbleiterbauelement |
US3497776A (en) * | 1968-03-06 | 1970-02-24 | Westinghouse Electric Corp | Uniform avalanche-breakdown rectifiers |
US3617829A (en) * | 1969-12-01 | 1971-11-02 | Motorola Inc | Radiation-insensitive voltage standard means |
US3641403A (en) * | 1970-05-25 | 1972-02-08 | Mitsubishi Electric Corp | Thyristor with degenerate semiconductive region |
JPS5213918B2 (xx) * | 1972-02-02 | 1977-04-18 | ||
JPS5548705B2 (xx) * | 1973-06-28 | 1980-12-08 | ||
US3918082A (en) * | 1973-11-07 | 1975-11-04 | Jearld L Hutson | Semiconductor switching device |
DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
US4156246A (en) * | 1977-05-25 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Combined ohmic and Schottky output transistors for logic circuit |
-
1980
- 1980-02-27 GB GB8006652A patent/GB2050694B/en not_active Expired
- 1980-02-29 NL NLAANVRAGE8001226,A patent/NL188434C/xx not_active IP Right Cessation
- 1980-03-03 DE DE19803008034 patent/DE3008034A1/de active Granted
- 1980-03-05 CA CA000347000A patent/CA1150417A/en not_active Expired
- 1980-03-05 FR FR8004965A patent/FR2456389B1/fr not_active Expired
-
1983
- 1983-07-12 US US06/512,942 patent/US4587547A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CA1150417A (en) | 1983-07-19 |
NL188434B (nl) | 1992-01-16 |
FR2456389A1 (fr) | 1980-12-05 |
DE3008034A1 (de) | 1980-11-13 |
FR2456389B1 (fr) | 1985-09-27 |
NL8001226A (nl) | 1980-11-11 |
US4587547A (en) | 1986-05-06 |
DE3008034C2 (xx) | 1989-04-20 |
GB2050694B (en) | 1983-09-28 |
GB2050694A (en) | 1981-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
A85 | Still pending on 85-01-01 | ||
CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
|
BC | A request for examination has been filed | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Free format text: 20000229 |