JPS57109475A - Solid image pickup element - Google Patents

Solid image pickup element

Info

Publication number
JPS57109475A
JPS57109475A JP55186496A JP18649680A JPS57109475A JP S57109475 A JPS57109475 A JP S57109475A JP 55186496 A JP55186496 A JP 55186496A JP 18649680 A JP18649680 A JP 18649680A JP S57109475 A JPS57109475 A JP S57109475A
Authority
JP
Japan
Prior art keywords
area
type
transfer
charge
channel stopper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55186496A
Other languages
Japanese (ja)
Inventor
Mitsuaki Takeshita
Takeo Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP55186496A priority Critical patent/JPS57109475A/en
Publication of JPS57109475A publication Critical patent/JPS57109475A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To realize the high density of a picture element and to raise sensitivity and the quantity of operating charge, by forming a junction type overflow drain area on a channel stopper area and connecting this drain area to a transfer electrode. CONSTITUTION:On one main surface of the first conductive type, for instance a p type Si substrate 21, plural n type transfer channels 23R, 23G and 23B blocked in the horizontal direction by a p<+> type channel stopper area 22 are formed. On these transfer chennel,s an n<-> type channel stopper area 24 is formed. Also, on a part corresponding to a storage gate area of each channel of said area 24, a p<+> type overflow drain area 25 is formed so as to form p-n junction with said part. Subsequently, on a substrate 21, a bandlike transfer electrode 7 is arrayed and formed along a charge transfer direction A through an insulating film, and a part of said electrode is connected to the corresponding area 25. In this way, during the photodetecting period, if excess charge is generated in the channels 23R, 23G and 23B, the excess charge is absorbed by the area 25, and a stable state is obtained.
JP55186496A 1980-12-26 1980-12-26 Solid image pickup element Pending JPS57109475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55186496A JPS57109475A (en) 1980-12-26 1980-12-26 Solid image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55186496A JPS57109475A (en) 1980-12-26 1980-12-26 Solid image pickup element

Publications (1)

Publication Number Publication Date
JPS57109475A true JPS57109475A (en) 1982-07-07

Family

ID=16189500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55186496A Pending JPS57109475A (en) 1980-12-26 1980-12-26 Solid image pickup element

Country Status (1)

Country Link
JP (1) JPS57109475A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135763A (en) * 1983-01-03 1984-08-04 ア−ルシ−エ− コ−ポレ−シヨン Charge transfer type image sensor and method of producing same
JPS6372153A (en) * 1986-09-16 1988-04-01 Fuji Photo Film Co Ltd Solid-state image sensor
JPS63228886A (en) * 1987-03-18 1988-09-22 Sanyo Electric Co Ltd Method for driving solid-state image pickup element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135763A (en) * 1983-01-03 1984-08-04 ア−ルシ−エ− コ−ポレ−シヨン Charge transfer type image sensor and method of producing same
JPH0512866B2 (en) * 1983-01-03 1993-02-19 Rca Corp
JPS6372153A (en) * 1986-09-16 1988-04-01 Fuji Photo Film Co Ltd Solid-state image sensor
JPS63228886A (en) * 1987-03-18 1988-09-22 Sanyo Electric Co Ltd Method for driving solid-state image pickup element
JPH0552111B2 (en) * 1987-03-18 1993-08-04 Sanyo Electric Co

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