FR2454705A1 - Cellule solaire au silicium amorphe - Google Patents

Cellule solaire au silicium amorphe

Info

Publication number
FR2454705A1
FR2454705A1 FR7928779A FR7928779A FR2454705A1 FR 2454705 A1 FR2454705 A1 FR 2454705A1 FR 7928779 A FR7928779 A FR 7928779A FR 7928779 A FR7928779 A FR 7928779A FR 2454705 A1 FR2454705 A1 FR 2454705A1
Authority
FR
France
Prior art keywords
solar cell
amorphous silicon
silicon solar
active body
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7928779A
Other languages
English (en)
Other versions
FR2454705B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2454705A1 publication Critical patent/FR2454705A1/fr
Application granted granted Critical
Publication of FR2454705B1 publication Critical patent/FR2454705B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

CELLULE SOLAIRE QUI COMPREND: UN SUBSTRAT ELECTRIQUEMENT CONDUCTEUR, UN CORPS ACTIF 20, COMPORTANT DEUX SURFACES PRINCIPALES, UNE COUCHE DE CERMET 16 CONTACTANT LA SECONDE SURFACE PRINCIPALE DU CORPS ACTIF, ET DES MOYENS POUR CONTACTER ELECTRIQUEMENT LE CERMET METALLIQUE, CETTE CELLULE ETANT CARACTERISEE EN CE QUE LE CORPS ACTIF 20 COMPREND UNE PLURALITE DE COUCHES DE SILICIUM AMORPHE HYDROGENE 22-26 COMPORTANT DES REGIONS DE TYPES DE CONDUCTIVITE DIFFERENTS 22A, 22B, 22C ET 26A, 26B, 26C, CES COUCHES ETANT EMPILEES. UNE JONCTION TUNNEL TRANSPARENTE 24 EST DISPOSEE ENTRE CHAQUE COUCHE 22-26.
FR7928779A 1979-04-19 1979-11-22 Cellule solaire au silicium amorphe Expired FR2454705B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3146079A 1979-04-19 1979-04-19

Publications (2)

Publication Number Publication Date
FR2454705A1 true FR2454705A1 (fr) 1980-11-14
FR2454705B1 FR2454705B1 (fr) 1986-06-20

Family

ID=21859579

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7928779A Expired FR2454705B1 (fr) 1979-04-19 1979-11-22 Cellule solaire au silicium amorphe

Country Status (6)

Country Link
JP (1) JPS55141765A (fr)
DE (1) DE2950085A1 (fr)
FR (1) FR2454705B1 (fr)
GB (1) GB2047463B (fr)
IT (1) IT1194594B (fr)
MY (1) MY8500782A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2464564A1 (fr) * 1979-08-28 1981-03-06 Rca Corp Batterie solaire au silicium amorphe
ZA849070B (en) * 1983-12-07 1985-07-31 Energy Conversion Devices Inc Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures
EP0153043A3 (fr) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Couche de contact ohmique
EP0168132A3 (fr) * 1984-05-14 1987-04-29 Energy Conversion Devices, Inc. Structures semi-conductrices induites par un champ statique
JPS6132481A (ja) * 1984-07-24 1986-02-15 Sharp Corp 非晶質半導体素子
JPS6177375A (ja) * 1984-09-21 1986-04-19 Sharp Corp カラ−センサ
JPS61104678A (ja) * 1984-10-29 1986-05-22 Mitsubishi Electric Corp アモルフアス太陽電池
JPS63100858U (fr) * 1986-12-19 1988-06-30
US20080135083A1 (en) * 2006-12-08 2008-06-12 Higher Way Electronic Co., Ltd. Cascade solar cell with amorphous silicon-based solar cell
KR101918737B1 (ko) * 2012-03-19 2019-02-08 엘지전자 주식회사 태양 전지

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1129220A (fr) * 1955-07-25 1957-01-17 Piles photovoltaïques à rendement élevé
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
US4140610A (en) * 1976-06-28 1979-02-20 Futaba Denshi Kogyo Kabushiki Kaisha Method of producing a PN junction type solar battery
FR2424632A1 (fr) * 1978-04-24 1979-11-23 Rca Corp Perfectionnements apportes aux cellules solaires au silicium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL48996A (en) * 1975-02-27 1977-08-31 Varian Associates Photovoltaic cells
DE2514013A1 (de) * 1975-03-29 1976-10-07 Licentia Gmbh Strahlungsempfindliches halbleiterbauelement
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS55111180A (en) * 1979-02-19 1980-08-27 Sharp Corp Thin-film solar battery of high output voltage

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1129220A (fr) * 1955-07-25 1957-01-17 Piles photovoltaïques à rendement élevé
US4140610A (en) * 1976-06-28 1979-02-20 Futaba Denshi Kogyo Kabushiki Kaisha Method of producing a PN junction type solar battery
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
FR2424632A1 (fr) * 1978-04-24 1979-11-23 Rca Corp Perfectionnements apportes aux cellules solaires au silicium

Also Published As

Publication number Publication date
DE2950085C2 (fr) 1992-01-23
MY8500782A (en) 1985-12-31
IT7927500A0 (it) 1979-11-22
GB2047463B (en) 1983-06-15
JPS55141765A (en) 1980-11-05
JPS6333308B2 (fr) 1988-07-05
GB2047463A (en) 1980-11-26
FR2454705B1 (fr) 1986-06-20
DE2950085A1 (de) 1980-10-30
IT1194594B (it) 1988-09-22

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