JPS5464983A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5464983A JPS5464983A JP13178677A JP13178677A JPS5464983A JP S5464983 A JPS5464983 A JP S5464983A JP 13178677 A JP13178677 A JP 13178677A JP 13178677 A JP13178677 A JP 13178677A JP S5464983 A JPS5464983 A JP S5464983A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- polycrystal
- layer
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To enhance the characteristics for the device in which both the 2-layer and single-layer silicon gate structure elements coexist by providing Si3N4 film on the 1st gate oxide film at the necessary region in order to prevent the substrte from being etched when the 1st layer polycrystal Si film is etched.
CONSTITUTION: The 1st gate oxide film 12 is provided on P-type Si substrate 11; Si3N4 film 13 is coated on address selecting MOS transistorforming region; and 1st polycrystal Si layer 14 is grown with partial overlap to film 13 to cover 2nd gate oxide film 15. Then 2nd polycrystal Si film 16 is grown on the entire surface, and photo resist film 17a and 17b are provided to the memory and the gate region of MOS element. Film 16 is then etched to form gate electrode 16a and 16b for the memory and MOS element. After this, the etching is given again to obtain floating gate electrode 14a for the memory element, and film 17a and 17b are removed to cover the exposed polycrystal Si surface with oxide film 18. In this way, film 13 is provided to keep the surface of substrate 1 unexposed until the gate is obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13178677A JPS5464983A (en) | 1977-11-02 | 1977-11-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13178677A JPS5464983A (en) | 1977-11-02 | 1977-11-02 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5464983A true JPS5464983A (en) | 1979-05-25 |
Family
ID=15066102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13178677A Pending JPS5464983A (en) | 1977-11-02 | 1977-11-02 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5464983A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5792868A (en) * | 1980-10-06 | 1982-06-09 | Siemens Ag | Method of producing integrated 2-transistor memory cell |
JPS58137259A (en) * | 1982-02-09 | 1983-08-15 | Nec Corp | Manufacture of semiconductor device |
JPS58209140A (en) * | 1982-05-31 | 1983-12-06 | Nec Corp | Manufacture of semiconductor device |
JPH023269A (en) * | 1988-01-04 | 1990-01-08 | Sgs Thomson Microelectron Sa | Manufacture of integrated circuit |
-
1977
- 1977-11-02 JP JP13178677A patent/JPS5464983A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5792868A (en) * | 1980-10-06 | 1982-06-09 | Siemens Ag | Method of producing integrated 2-transistor memory cell |
JPS58137259A (en) * | 1982-02-09 | 1983-08-15 | Nec Corp | Manufacture of semiconductor device |
JPH0218587B2 (en) * | 1982-02-09 | 1990-04-26 | Nippon Electric Co | |
JPS58209140A (en) * | 1982-05-31 | 1983-12-06 | Nec Corp | Manufacture of semiconductor device |
JPH0252864B2 (en) * | 1982-05-31 | 1990-11-14 | Nippon Electric Co | |
JPH023269A (en) * | 1988-01-04 | 1990-01-08 | Sgs Thomson Microelectron Sa | Manufacture of integrated circuit |
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