JPS5464983A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5464983A
JPS5464983A JP13178677A JP13178677A JPS5464983A JP S5464983 A JPS5464983 A JP S5464983A JP 13178677 A JP13178677 A JP 13178677A JP 13178677 A JP13178677 A JP 13178677A JP S5464983 A JPS5464983 A JP S5464983A
Authority
JP
Japan
Prior art keywords
film
gate
polycrystal
layer
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13178677A
Other languages
Japanese (ja)
Inventor
Makoto Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13178677A priority Critical patent/JPS5464983A/en
Publication of JPS5464983A publication Critical patent/JPS5464983A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To enhance the characteristics for the device in which both the 2-layer and single-layer silicon gate structure elements coexist by providing Si3N4 film on the 1st gate oxide film at the necessary region in order to prevent the substrte from being etched when the 1st layer polycrystal Si film is etched.
CONSTITUTION: The 1st gate oxide film 12 is provided on P-type Si substrate 11; Si3N4 film 13 is coated on address selecting MOS transistorforming region; and 1st polycrystal Si layer 14 is grown with partial overlap to film 13 to cover 2nd gate oxide film 15. Then 2nd polycrystal Si film 16 is grown on the entire surface, and photo resist film 17a and 17b are provided to the memory and the gate region of MOS element. Film 16 is then etched to form gate electrode 16a and 16b for the memory and MOS element. After this, the etching is given again to obtain floating gate electrode 14a for the memory element, and film 17a and 17b are removed to cover the exposed polycrystal Si surface with oxide film 18. In this way, film 13 is provided to keep the surface of substrate 1 unexposed until the gate is obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP13178677A 1977-11-02 1977-11-02 Manufacture of semiconductor device Pending JPS5464983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13178677A JPS5464983A (en) 1977-11-02 1977-11-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13178677A JPS5464983A (en) 1977-11-02 1977-11-02 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5464983A true JPS5464983A (en) 1979-05-25

Family

ID=15066102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13178677A Pending JPS5464983A (en) 1977-11-02 1977-11-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5464983A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792868A (en) * 1980-10-06 1982-06-09 Siemens Ag Method of producing integrated 2-transistor memory cell
JPS58137259A (en) * 1982-02-09 1983-08-15 Nec Corp Manufacture of semiconductor device
JPS58209140A (en) * 1982-05-31 1983-12-06 Nec Corp Manufacture of semiconductor device
JPH023269A (en) * 1988-01-04 1990-01-08 Sgs Thomson Microelectron Sa Manufacture of integrated circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792868A (en) * 1980-10-06 1982-06-09 Siemens Ag Method of producing integrated 2-transistor memory cell
JPS58137259A (en) * 1982-02-09 1983-08-15 Nec Corp Manufacture of semiconductor device
JPH0218587B2 (en) * 1982-02-09 1990-04-26 Nippon Electric Co
JPS58209140A (en) * 1982-05-31 1983-12-06 Nec Corp Manufacture of semiconductor device
JPH0252864B2 (en) * 1982-05-31 1990-11-14 Nippon Electric Co
JPH023269A (en) * 1988-01-04 1990-01-08 Sgs Thomson Microelectron Sa Manufacture of integrated circuit

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