FR2423030A1 - Cellule de memoire a semiconducteurs comportant des conducteurs de commande possedant une conductivite elevee - Google Patents
Cellule de memoire a semiconducteurs comportant des conducteurs de commande possedant une conductivite eleveeInfo
- Publication number
- FR2423030A1 FR2423030A1 FR7908484A FR7908484A FR2423030A1 FR 2423030 A1 FR2423030 A1 FR 2423030A1 FR 7908484 A FR7908484 A FR 7908484A FR 7908484 A FR7908484 A FR 7908484A FR 2423030 A1 FR2423030 A1 FR 2423030A1
- Authority
- FR
- France
- Prior art keywords
- control conductors
- semiconductor memory
- high conductivity
- memory cell
- cell containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000015654 memory Effects 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2815605A DE2815605C3 (de) | 1978-04-11 | 1978-04-11 | Halbleiterspeicher mit Ansteuerleitungen hoher Leitfähigkeit |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2423030A1 true FR2423030A1 (fr) | 1979-11-09 |
Family
ID=6036700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7908484A Pending FR2423030A1 (fr) | 1978-04-11 | 1979-04-04 | Cellule de memoire a semiconducteurs comportant des conducteurs de commande possedant une conductivite elevee |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2815605C3 (de) |
FR (1) | FR2423030A1 (de) |
GB (1) | GB2019091B (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4329706A (en) * | 1979-03-01 | 1982-05-11 | International Business Machines Corporation | Doped polysilicon silicide semiconductor integrated circuit interconnections |
DE2926874A1 (de) * | 1979-07-03 | 1981-01-22 | Siemens Ag | Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie |
US4285761A (en) * | 1980-06-30 | 1981-08-25 | International Business Machines Corporation | Process for selectively forming refractory metal silicide layers on semiconductor devices |
JPS5832789B2 (ja) * | 1980-07-18 | 1983-07-15 | 富士通株式会社 | 半導体メモリ |
JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
DE3046218C2 (de) * | 1980-12-08 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Erzeugung einer Eintransistor-Speicherzelle in Doppelsilizium-Technik |
US4403394A (en) * | 1980-12-17 | 1983-09-13 | International Business Machines Corporation | Formation of bit lines for ram device |
JPS57159055A (en) * | 1981-03-25 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor device |
DE3250096C2 (de) * | 1981-05-27 | 1997-09-11 | Hitachi Ltd | Verfahren zur Herstellung einer einen MISFET enthaltenden Halbleiterschaltung |
JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
JPS57207556A (en) * | 1981-06-12 | 1982-12-20 | Nippon Denso Co Ltd | Electric dust collector |
JPS5873156A (ja) * | 1981-10-28 | 1983-05-02 | Hitachi Ltd | 半導体装置 |
JPS5893347A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | Mos型半導体装置及びその製造方法 |
DE3304651A1 (de) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Dynamische halbleiterspeicherzelle mit wahlfreiem zugriff (dram) und verfahren zu ihrer herstellung |
GB2139418A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices and conductors therefor |
JPS60136337A (ja) * | 1983-12-22 | 1985-07-19 | モノリシツク・メモリ−ズ・インコ−ポレイテツド | 2重層処理においてヒロツク抑制層を形成する方法及びその構造物 |
JPS60134466A (ja) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS60263455A (ja) * | 1984-06-04 | 1985-12-26 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | ポリシリコン構造 |
KR940002772B1 (ko) * | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
JP2869090B2 (ja) * | 1989-08-11 | 1999-03-10 | 株式会社リコー | 半導体メモリ装置とその製造方法 |
US5362662A (en) * | 1989-08-11 | 1994-11-08 | Ricoh Company, Ltd. | Method for producing semiconductor memory device having a planar cell structure |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2164745C3 (de) * | 1971-12-27 | 1981-07-30 | geb. Avvakumova Evdokija Kirillovna Moskva Šergold | Halbleiter-Diodenmatrix |
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
-
1978
- 1978-04-11 DE DE2815605A patent/DE2815605C3/de not_active Expired
-
1979
- 1979-04-04 FR FR7908484A patent/FR2423030A1/fr active Pending
- 1979-04-06 GB GB7912246A patent/GB2019091B/en not_active Expired
Non-Patent Citations (4)
Title |
---|
EXBK/74 * |
EXBK/75 * |
EXBK/77 * |
EXBK/78 * |
Also Published As
Publication number | Publication date |
---|---|
GB2019091A (en) | 1979-10-24 |
GB2019091B (en) | 1982-07-07 |
DE2815605C3 (de) | 1981-04-16 |
DE2815605B2 (de) | 1980-06-26 |
DE2815605A1 (de) | 1979-10-18 |
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