JPS5780739A - Semiconductor integrated circuit device and manufacture thereof - Google Patents
Semiconductor integrated circuit device and manufacture thereofInfo
- Publication number
- JPS5780739A JPS5780739A JP55155945A JP15594580A JPS5780739A JP S5780739 A JPS5780739 A JP S5780739A JP 55155945 A JP55155945 A JP 55155945A JP 15594580 A JP15594580 A JP 15594580A JP S5780739 A JPS5780739 A JP S5780739A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- layer structure
- specific resistance
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a wire which can match by itself and has small specific resistance and fast signal transmission speed with heat resistance for an IC by forming in 3-layer structure of high melting point metal-metal containing polysilicon-Si. CONSTITUTION:A gate electrode of 3-layer structure is formed on the gate oxidized film 53 of a P type Si substrate 51, N<+> type layers 572, 573 matched by itself are provided, the 3-layer structure electrode is attached to the layer 572, and an aluminum layer is attached to the N<+> type layer 573. To form the electrode of 3-layer structure, CVD polysilicons 541, 542 are formed, phosphorus is added, Mos 551, 552 containing 10wt% of Si are commonly deposited and laminated, pure Mos 561, 562 are sputtered and laminated, are then plasma etched to form the electrode of 3-layer, the electrode is then annealed in N2, and Si is uniformly distributed in the Mo layer. According to this structure, the three layers are bonded to each other, with the result that the specific resistance becomes vary small value such as 30-35muOMEGAcm. Further, the Mo containing Si prevents an impurity to be mixed at the depositing time from being stopped by the polysilicon and not to be diffused in a semiconductor substrate. In this manner, a semiconductor integrated circuit device having small specific resistance and short transmission time can be obtained.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55155945A JPS5780739A (en) | 1980-11-07 | 1980-11-07 | Semiconductor integrated circuit device and manufacture thereof |
DE19813141195 DE3141195A1 (en) | 1980-11-07 | 1981-10-16 | INTEGRATED SEMICONDUCTOR CIRCUIT AND METHOD FOR THEIR PRODUCTION |
FR8120237A FR2494042B1 (en) | 1980-11-07 | 1981-10-28 | SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THE SAME |
GB8133069A GB2087148B (en) | 1980-11-07 | 1981-11-03 | Composite conductor structure for semiconductor devices |
IT24891/81A IT1140271B (en) | 1980-11-07 | 1981-11-05 | SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS PRODUCTION |
GB08331916A GB2134706B (en) | 1980-11-07 | 1983-11-30 | Composite conductor structure for semiconductor devices |
SG32686A SG32686G (en) | 1980-11-07 | 1986-04-08 | Semiconductor devices and a process for producing the same |
HK446/86A HK44686A (en) | 1980-11-07 | 1986-06-19 | Semiconductor integrated circuit devices and a process for producing the same |
HK705/86A HK70586A (en) | 1980-11-07 | 1986-09-18 | Semiconductor devices and a process for producing the same |
MY583/86A MY8600583A (en) | 1980-11-07 | 1986-12-30 | Semiconductor integrated circuit devices and a process for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55155945A JPS5780739A (en) | 1980-11-07 | 1980-11-07 | Semiconductor integrated circuit device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5780739A true JPS5780739A (en) | 1982-05-20 |
Family
ID=15616950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55155945A Pending JPS5780739A (en) | 1980-11-07 | 1980-11-07 | Semiconductor integrated circuit device and manufacture thereof |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5780739A (en) |
DE (1) | DE3141195A1 (en) |
FR (1) | FR2494042B1 (en) |
GB (2) | GB2087148B (en) |
HK (2) | HK44686A (en) |
IT (1) | IT1140271B (en) |
MY (1) | MY8600583A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61248446A (en) * | 1985-04-25 | 1986-11-05 | Fujitsu Ltd | Semiconductor device |
JPS61248447A (en) * | 1985-04-25 | 1986-11-05 | Fujitsu Ltd | Formation of wiring layer |
US5100824A (en) * | 1985-04-01 | 1992-03-31 | National Semiconductor Corporation | Method of making small contactless RAM cell |
US5340762A (en) * | 1985-04-01 | 1994-08-23 | Fairchild Semiconductor Corporation | Method of making small contactless RAM cell |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
FR2519461A1 (en) * | 1982-01-06 | 1983-07-08 | Hitachi Ltd | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE |
DE3218309A1 (en) * | 1982-05-14 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING INTEGRATED MOS FIELD EFFECT TRANSISTORS WITH AN ADDITIONAL CIRCUIT LEVEL, MADE OF METAL SILICIDES |
JPS593968A (en) * | 1982-06-29 | 1984-01-10 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
DE3382482D1 (en) * | 1982-09-30 | 1992-01-30 | Advanced Micro Devices Inc | ALUMINUM-METAL-SILICIDE CONNECTING STRUCTURE FOR INTEGRATED CIRCUITS AND THEIR PRODUCTION METHOD. |
US5136361A (en) * | 1982-09-30 | 1992-08-04 | Advanced Micro Devices, Inc. | Stratified interconnect structure for integrated circuits |
DE3304651A1 (en) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | DYNAMIC SEMICONDUCTOR MEMORY CELL WITH OPTIONAL ACCESS (DRAM) AND METHOD FOR THEIR PRODUCTION |
GB2140203B (en) * | 1983-03-15 | 1987-01-14 | Canon Kk | Thin film transistor with wiring layer continuous with the source and drain |
GB2139419A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices |
FR2555364B1 (en) * | 1983-11-18 | 1990-02-02 | Hitachi Ltd | METHOD FOR MANUFACTURING CONNECTIONS OF A DEVICE WITH INTEGRATED SEMICONDUCTOR CIRCUITS INCLUDING IN PARTICULAR A MITSET |
JPS60134466A (en) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPH067584B2 (en) * | 1984-04-05 | 1994-01-26 | 日本電気株式会社 | Semiconductor memory |
US5227316A (en) * | 1985-01-22 | 1993-07-13 | National Semiconductor Corporation | Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size |
US5061986A (en) * | 1985-01-22 | 1991-10-29 | National Semiconductor Corporation | Self-aligned extended base contact for a bipolar transistor having reduced cell size and improved electrical characteristics |
EP0490877A3 (en) | 1985-01-22 | 1992-08-26 | Fairchild Semiconductor Corporation | Interconnection for an integrated circuit |
US5045916A (en) * | 1985-01-22 | 1991-09-03 | Fairchild Semiconductor Corporation | Extended silicide and external contact technology |
US5072275A (en) * | 1986-02-28 | 1991-12-10 | Fairchild Semiconductor Corporation | Small contactless RAM cell |
CA1235824A (en) * | 1985-06-28 | 1988-04-26 | Vu Q. Ho | Vlsi mosfet circuits using refractory metal and/or refractory metal silicide |
SE8603963L (en) * | 1985-09-27 | 1987-03-28 | Rca Corp | CONTACT WITH LAW RESISTANCE FOR A SEMICONDUCTOR ORGAN AND SETTING TO MAKE IT |
US4638400A (en) * | 1985-10-24 | 1987-01-20 | General Electric Company | Refractory metal capacitor structures, particularly for analog integrated circuit devices |
US4774207A (en) * | 1987-04-20 | 1988-09-27 | General Electric Company | Method for producing high yield electrical contacts to N+ amorphous silicon |
US4990995A (en) * | 1987-09-08 | 1991-02-05 | General Electric Company | Low reflectance conductor in an integrated circuit |
DE19836736C1 (en) * | 1998-08-13 | 1999-12-30 | Siemens Ag | Combination type precharging and equalising-circuit for semiconductor memory device |
US6265297B1 (en) | 1999-09-01 | 2001-07-24 | Micron Technology, Inc. | Ammonia passivation of metal gate electrodes to inhibit oxidation of metal |
US6458714B1 (en) | 2000-11-22 | 2002-10-01 | Micron Technology, Inc. | Method of selective oxidation in semiconductor manufacture |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4813583B1 (en) * | 1969-04-15 | 1973-04-27 | ||
JPS5295886A (en) * | 1976-02-07 | 1977-08-11 | Zaisui Ri | Automatic treating movable scraps presser |
JPS5465490A (en) * | 1977-11-02 | 1979-05-26 | Nec Corp | Integrated circuit and its manufacture |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5380986A (en) * | 1976-12-25 | 1978-07-17 | Toshiba Corp | Manufacture of semiconductor device |
JPS583380B2 (en) * | 1977-03-04 | 1983-01-21 | 株式会社日立製作所 | Semiconductor device and its manufacturing method |
US4141022A (en) * | 1977-09-12 | 1979-02-20 | Signetics Corporation | Refractory metal contacts for IGFETS |
US4128670A (en) * | 1977-11-11 | 1978-12-05 | International Business Machines Corporation | Fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
JPS5488783A (en) * | 1977-12-26 | 1979-07-14 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor |
IT1110843B (en) * | 1978-02-27 | 1986-01-06 | Rca Corp | Sunken contact for complementary type MOS devices |
US4218291A (en) * | 1978-02-28 | 1980-08-19 | Vlsi Technology Research Association | Process for forming metal and metal silicide films |
IT1111823B (en) * | 1978-03-17 | 1986-01-13 | Rca Corp | LOW SURFACE RESISTANCE MOSFET DEVICE AND ITS MANUFACTURING METHOD |
DE2815605C3 (en) * | 1978-04-11 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Semiconductor memory with control lines of high conductivity |
DE2823855A1 (en) * | 1978-05-31 | 1979-12-06 | Fujitsu Ltd | Contact prodn. in semiconductor device with multiple wiring layers - using reactive metal film in contact hole between two aluminium layers to prevent faults |
GB2061615A (en) * | 1979-10-25 | 1981-05-13 | Gen Electric | Composite conductors for integrated circuits |
JPS5698873A (en) * | 1980-01-07 | 1981-08-08 | Nec Corp | Integrated circuit |
-
1980
- 1980-11-07 JP JP55155945A patent/JPS5780739A/en active Pending
-
1981
- 1981-10-16 DE DE19813141195 patent/DE3141195A1/en active Granted
- 1981-10-28 FR FR8120237A patent/FR2494042B1/en not_active Expired
- 1981-11-03 GB GB8133069A patent/GB2087148B/en not_active Expired
- 1981-11-05 IT IT24891/81A patent/IT1140271B/en active
-
1983
- 1983-11-30 GB GB08331916A patent/GB2134706B/en not_active Expired
-
1986
- 1986-06-19 HK HK446/86A patent/HK44686A/en unknown
- 1986-09-18 HK HK705/86A patent/HK70586A/en unknown
- 1986-12-30 MY MY583/86A patent/MY8600583A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4813583B1 (en) * | 1969-04-15 | 1973-04-27 | ||
JPS5295886A (en) * | 1976-02-07 | 1977-08-11 | Zaisui Ri | Automatic treating movable scraps presser |
JPS5465490A (en) * | 1977-11-02 | 1979-05-26 | Nec Corp | Integrated circuit and its manufacture |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5100824A (en) * | 1985-04-01 | 1992-03-31 | National Semiconductor Corporation | Method of making small contactless RAM cell |
US5340762A (en) * | 1985-04-01 | 1994-08-23 | Fairchild Semiconductor Corporation | Method of making small contactless RAM cell |
JPS61248446A (en) * | 1985-04-25 | 1986-11-05 | Fujitsu Ltd | Semiconductor device |
JPS61248447A (en) * | 1985-04-25 | 1986-11-05 | Fujitsu Ltd | Formation of wiring layer |
Also Published As
Publication number | Publication date |
---|---|
FR2494042B1 (en) | 1986-12-26 |
DE3141195A1 (en) | 1982-06-24 |
FR2494042A1 (en) | 1982-05-14 |
HK44686A (en) | 1986-06-27 |
IT1140271B (en) | 1986-09-24 |
GB2087148A (en) | 1982-05-19 |
HK70586A (en) | 1986-09-26 |
DE3141195C2 (en) | 1993-04-22 |
GB8331916D0 (en) | 1984-01-04 |
GB2134706B (en) | 1985-04-17 |
IT8124891A0 (en) | 1981-11-05 |
GB2087148B (en) | 1985-04-11 |
MY8600583A (en) | 1986-12-31 |
GB2134706A (en) | 1984-08-15 |
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