JPS57207556A - Electric dust collector - Google Patents

Electric dust collector

Info

Publication number
JPS57207556A
JPS57207556A JP56090652A JP9065281A JPS57207556A JP S57207556 A JPS57207556 A JP S57207556A JP 56090652 A JP56090652 A JP 56090652A JP 9065281 A JP9065281 A JP 9065281A JP S57207556 A JPS57207556 A JP S57207556A
Authority
JP
Japan
Prior art keywords
sides
parts
electrode
insulating
plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56090652A
Other languages
Japanese (ja)
Other versions
JPS6344018B2 (en
Inventor
Akio Takeaji
Sadaichi Nabeta
Kazuyoshi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP56090652A priority Critical patent/JPS57207556A/en
Priority to FR8209135A priority patent/FR2506989B1/en
Publication of JPS57207556A publication Critical patent/JPS57207556A/en
Publication of JPS6344018B2 publication Critical patent/JPS6344018B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic Separation (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To improve efficiency of assembling work of dust collecting section and prevent erroneous assembling by exposing conductive layers alternately on both sides in the center of an insulating film, and forming electrode plates provided with uneven parts that form insulating parts on both sides.
CONSTITUTION: Conductive paint is coated at a proper width alternately on the surface and the back of an insulating film 7 along its center. An electrode plate 6 is made by making uneven parts along both sides edges to form insulating parts. This electrode plate 6 is made to a laminated state bending it to different direction at a specified distance, and housed in an outer frame 11 consisting of insulating plates. Conductive parts 9 projected to both sides at the time of folding are connected to electrode plates 12, 13 in common and positive electrode and negative electrode of a DC high voltage power source 14 are connected with electrode plates 12, 13 respectively to constitute a dust collecting section 15.
COPYRIGHT: (C)1982,JPO&Japio
JP56090652A 1981-06-12 1981-06-12 Electric dust collector Granted JPS57207556A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56090652A JPS57207556A (en) 1981-06-12 1981-06-12 Electric dust collector
FR8209135A FR2506989B1 (en) 1981-06-12 1982-05-26 SEMICONDUCTOR MEMORY DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56090652A JPS57207556A (en) 1981-06-12 1981-06-12 Electric dust collector

Publications (2)

Publication Number Publication Date
JPS57207556A true JPS57207556A (en) 1982-12-20
JPS6344018B2 JPS6344018B2 (en) 1988-09-02

Family

ID=14004443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56090652A Granted JPS57207556A (en) 1981-06-12 1981-06-12 Electric dust collector

Country Status (2)

Country Link
JP (1) JPS57207556A (en)
FR (1) FR2506989B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01174056U (en) * 1988-05-30 1989-12-11
JPH01174057U (en) * 1988-05-30 1989-12-11
CN107185713A (en) * 2017-06-15 2017-09-22 韦彩丽 A kind of household electrostatic dedusting adornment

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555364B1 (en) * 1983-11-18 1990-02-02 Hitachi Ltd METHOD FOR MANUFACTURING CONNECTIONS OF A DEVICE WITH INTEGRATED SEMICONDUCTOR CIRCUITS INCLUDING IN PARTICULAR A MITSET

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2815605C3 (en) * 1978-04-11 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Semiconductor memory with control lines of high conductivity

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01174056U (en) * 1988-05-30 1989-12-11
JPH01174057U (en) * 1988-05-30 1989-12-11
CN107185713A (en) * 2017-06-15 2017-09-22 韦彩丽 A kind of household electrostatic dedusting adornment

Also Published As

Publication number Publication date
JPS6344018B2 (en) 1988-09-02
FR2506989B1 (en) 1985-06-21
FR2506989A1 (en) 1982-12-03

Similar Documents

Publication Publication Date Title
GB9103966D0 (en) Laminated displacement device
JPS5588028A (en) Solid electrochromic element
ES455057A1 (en) Color selection means comprising lens electrodes spaced by grains of insulating material
JPS57207556A (en) Electric dust collector
CA2040673A1 (en) Lead acid storage battery
JPS5332406A (en) Vane wheel
JPS53112578A (en) Electirc dust-collecting device
JPS5336648A (en) Electrochemical generator having auxiliary negative electrode
JPS54156546A (en) Corona charger
FR2347790A1 (en) ELECTRIC ACCUMULATOR WITH POSITIVE NICKEL OXIDE ELECTRODES AND NEGATIVE IRON ELECTRODES
JPS566598A (en) Ultrasonic converting element
JPS54158770A (en) Electric dust collector
JPS54141641A (en) Electrostatic recording electrode
JPH0461899U (en)
IT8319907A0 (en) PROCEDURE, FOR THE MANUFACTURE OF A LARGE SURFACE CURRENT COLLECTOR FOR AN ELECTROCHEMICAL CELL, IN THE FORM OF A POROUS PLATE OR TITANIUM SHEET.
JPS57187183A (en) Series spot welding method
JPS5738000A (en) Manufacture of piezoelectric oscillator
JPS5650362A (en) Toner gathering device
JPS5240879A (en) Eelectric dust collecing device
JPS5548490A (en) Plate welding method inside of box-shaped structure
GB1046804A (en) Electric cell
JPS54111754A (en) Multiplier tube for x-ray fluorescent light
JPS6417482A (en) Solar cell and manufacture thereof
JPS57127459A (en) Electric dust collector
JPS5684873A (en) Flattened battery