FR2280203A1 - Procede d'ajustement de tension de seuil de transistors a effet de champ - Google Patents

Procede d'ajustement de tension de seuil de transistors a effet de champ

Info

Publication number
FR2280203A1
FR2280203A1 FR7426057A FR7426057A FR2280203A1 FR 2280203 A1 FR2280203 A1 FR 2280203A1 FR 7426057 A FR7426057 A FR 7426057A FR 7426057 A FR7426057 A FR 7426057A FR 2280203 A1 FR2280203 A1 FR 2280203A1
Authority
FR
France
Prior art keywords
field
effect transistor
adjustment method
tension adjustment
transistor threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7426057A
Other languages
English (en)
Other versions
FR2280203B1 (fr
Inventor
Gerard Nuzillat
Christian Arnodo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7426057A priority Critical patent/FR2280203A1/fr
Priority to US05/598,165 priority patent/US4013483A/en
Priority to GB31327/75A priority patent/GB1510683A/en
Priority to DE19752533460 priority patent/DE2533460A1/de
Priority to JP50091480A priority patent/JPS5760783B2/ja
Publication of FR2280203A1 publication Critical patent/FR2280203A1/fr
Application granted granted Critical
Publication of FR2280203B1 publication Critical patent/FR2280203B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7426057A 1974-07-26 1974-07-26 Procede d'ajustement de tension de seuil de transistors a effet de champ Granted FR2280203A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7426057A FR2280203A1 (fr) 1974-07-26 1974-07-26 Procede d'ajustement de tension de seuil de transistors a effet de champ
US05/598,165 US4013483A (en) 1974-07-26 1975-07-22 Method of adjusting the threshold voltage of field effect transistors
GB31327/75A GB1510683A (en) 1974-07-26 1975-07-25 Method of adjusting the threshold voltage and saturation current of field effect transistors
DE19752533460 DE2533460A1 (de) 1974-07-26 1975-07-25 Verfahren zur einstellung der schwellenspannung von feldeffekttransistoren
JP50091480A JPS5760783B2 (fr) 1974-07-26 1975-07-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7426057A FR2280203A1 (fr) 1974-07-26 1974-07-26 Procede d'ajustement de tension de seuil de transistors a effet de champ

Publications (2)

Publication Number Publication Date
FR2280203A1 true FR2280203A1 (fr) 1976-02-20
FR2280203B1 FR2280203B1 (fr) 1978-03-31

Family

ID=9141766

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7426057A Granted FR2280203A1 (fr) 1974-07-26 1974-07-26 Procede d'ajustement de tension de seuil de transistors a effet de champ

Country Status (5)

Country Link
US (1) US4013483A (fr)
JP (1) JPS5760783B2 (fr)
DE (1) DE2533460A1 (fr)
FR (1) FR2280203A1 (fr)
GB (1) GB1510683A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496989A1 (fr) * 1980-12-03 1982-06-25 Hitachi Ltd Dispositif a circuits integres a semiconducteurs comportant plusieurs transistors misfet formant un circuit logique, et procede de fabrication d'un tel dispositif

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138280A (en) * 1978-02-02 1979-02-06 International Rectifier Corporation Method of manufacture of zener diodes
JPS5513965A (en) * 1978-07-17 1980-01-31 Nec Corp Electric field control type semiconductor device
US4277882A (en) * 1978-12-04 1981-07-14 Fairchild Camera And Instrument Corporation Method of producing a metal-semiconductor field-effect transistor
JPS5617075A (en) * 1979-07-20 1981-02-18 Mitsubishi Electric Corp Semiconductor device
JPS57102075A (en) * 1980-12-17 1982-06-24 Fujitsu Ltd Semiconductor device and manufacture thereof
JPH01187837A (ja) * 1988-01-22 1989-07-27 Agency Of Ind Science & Technol 半導体集積回路
US4948746A (en) * 1988-03-04 1990-08-14 Harris Corporation Isolated gate MESFET and method of making and trimming
JP3911059B2 (ja) * 1997-01-31 2007-05-09 ソニー株式会社 半導体装置の製造方法
JP4084436B2 (ja) * 1997-03-26 2008-04-30 沖電気工業株式会社 化合物半導体装置の特性の制御方法
US6107106A (en) * 1998-02-05 2000-08-22 Sony Corporation Localized control of integrated circuit parameters using focus ion beam irradiation
US7466009B2 (en) * 2006-06-05 2008-12-16 Texas Instruments Incorporated Method for reducing dislocation threading using a suppression implant

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
US3558366A (en) * 1968-09-17 1971-01-26 Bell Telephone Labor Inc Metal shielding for ion implanted semiconductor device
US3895966A (en) * 1969-09-30 1975-07-22 Sprague Electric Co Method of making insulated gate field effect transistor with controlled threshold voltage
US3666573A (en) * 1969-12-17 1972-05-30 Rca Corp Method for making transistors including gain determining step
US3676229A (en) * 1971-01-26 1972-07-11 Rca Corp Method for making transistors including base sheet resistivity determining step
US3753774A (en) * 1971-04-05 1973-08-21 Rca Corp Method for making an intermetallic contact to a semiconductor device
US3774088A (en) * 1972-12-29 1973-11-20 Ibm An integrated circuit test transistor structure and method of fabricating the same
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496989A1 (fr) * 1980-12-03 1982-06-25 Hitachi Ltd Dispositif a circuits integres a semiconducteurs comportant plusieurs transistors misfet formant un circuit logique, et procede de fabrication d'un tel dispositif

Also Published As

Publication number Publication date
JPS5760783B2 (fr) 1982-12-21
DE2533460A1 (de) 1976-02-05
JPS5140775A (fr) 1976-04-05
GB1510683A (en) 1978-05-10
US4013483A (en) 1977-03-22
FR2280203B1 (fr) 1978-03-31

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