FR2318500A1 - Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire et son procede de fabrication - Google Patents
Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire et son procede de fabricationInfo
- Publication number
- FR2318500A1 FR2318500A1 FR7621991A FR7621991A FR2318500A1 FR 2318500 A1 FR2318500 A1 FR 2318500A1 FR 7621991 A FR7621991 A FR 7621991A FR 7621991 A FR7621991 A FR 7621991A FR 2318500 A1 FR2318500 A1 FR 2318500A1
- Authority
- FR
- France
- Prior art keywords
- oxide
- manufacturing process
- effect transistor
- complementary metal
- semiconductor field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50087395A JPS6031108B2 (ja) | 1975-07-18 | 1975-07-18 | 半導体装置の製造方法 |
JP50088064A JPS5211874A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
JP50088066A JPS5211876A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
JP50088065A JPS6048912B2 (ja) | 1975-07-18 | 1975-07-18 | 半導体装置製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2318500A1 true FR2318500A1 (fr) | 1977-02-11 |
FR2318500B1 FR2318500B1 (fr) | 1979-08-17 |
Family
ID=27467378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7621991A Granted FR2318500A1 (fr) | 1975-07-18 | 1976-07-19 | Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire et son procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (1) | US4302875A (fr) |
CH (1) | CH613071A5 (fr) |
DE (1) | DE2632448B2 (fr) |
FR (1) | FR2318500A1 (fr) |
GB (1) | GB1559583A (fr) |
MY (1) | MY8100313A (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
DE3173901D1 (en) * | 1981-10-28 | 1986-04-03 | Ibm | Process for characterising the reliability behaviour of bipolar semiconductor devices |
GB2128021A (en) * | 1982-09-13 | 1984-04-18 | Standard Microsyst Smc | CMOS structure including deep region and process for fabrication |
US4527325A (en) * | 1983-12-23 | 1985-07-09 | International Business Machines Corporation | Process for fabricating semiconductor devices utilizing a protective film during high temperature annealing |
US4728998A (en) * | 1984-09-06 | 1988-03-01 | Fairchild Semiconductor Corporation | CMOS circuit having a reduced tendency to latch |
US4603471A (en) * | 1984-09-06 | 1986-08-05 | Fairchild Semiconductor Corporation | Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions |
US4762802A (en) * | 1984-11-09 | 1988-08-09 | American Telephone And Telegraph Company At&T, Bell Laboratories | Method for preventing latchup in CMOS devices |
JP3375659B2 (ja) * | 1991-03-28 | 2003-02-10 | テキサス インスツルメンツ インコーポレイテツド | 静電放電保護回路の形成方法 |
JPH08181598A (ja) * | 1994-12-27 | 1996-07-12 | Oki Electric Ind Co Ltd | 半導体装置 |
JPH09199607A (ja) * | 1996-01-18 | 1997-07-31 | Nec Corp | Cmos半導体装置 |
DE10001871A1 (de) * | 2000-01-18 | 2001-08-02 | Infineon Technologies Ag | Verfahren zur Herstellung eines steuerbaren Halbleiterschalt-elements und steuerbares Halbleiterschaltelement |
US7132696B2 (en) | 2002-08-28 | 2006-11-07 | Micron Technology, Inc. | Intermeshed guard bands for multiple voltage supply structures on an integrated circuit, and methods of making same |
JP4387119B2 (ja) * | 2003-03-27 | 2009-12-16 | 三菱電機株式会社 | 半導体装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2139667A1 (en) * | 1971-05-28 | 1973-01-12 | Radiotechnique Compelec | Diffused base transistor - with a source of recombination centres |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615873A (en) * | 1969-06-03 | 1971-10-26 | Sprague Electric Co | Method of stabilizing mos devices |
US3712995A (en) * | 1972-03-27 | 1973-01-23 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
US3955210A (en) * | 1974-12-30 | 1976-05-04 | International Business Machines Corporation | Elimination of SCR structure |
US4053925A (en) * | 1975-08-07 | 1977-10-11 | Ibm Corporation | Method and structure for controllng carrier lifetime in semiconductor devices |
US4203126A (en) * | 1975-11-13 | 1980-05-13 | Siliconix, Inc. | CMOS structure and method utilizing retarded electric field for minimum latch-up |
-
1976
- 1976-07-14 GB GB29283/76A patent/GB1559583A/en not_active Expired
- 1976-07-19 DE DE2632448A patent/DE2632448B2/de not_active Withdrawn
- 1976-07-19 FR FR7621991A patent/FR2318500A1/fr active Granted
- 1976-07-19 CH CH923576A patent/CH613071A5/xx not_active IP Right Cessation
-
1979
- 1979-05-23 US US06/041,764 patent/US4302875A/en not_active Expired - Lifetime
-
1981
- 1981-12-30 MY MY313/81A patent/MY8100313A/xx unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2139667A1 (en) * | 1971-05-28 | 1973-01-12 | Radiotechnique Compelec | Diffused base transistor - with a source of recombination centres |
Non-Patent Citations (2)
Title |
---|
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOLUME SC-9 NA. 3, JUIN 1974, NEW-YORK. "HIGH-VOLTAGE SIMULTANEOUS DIFFUSION SILICON-GATE CMOS", R.A. BLANCHARD ET AL., PAGES 103-110 * |
SOLID-STATE ELECTRONICS, VOLUME 12, NO, 5 MAI 1969, OXFORD. P. RICHMAN, "COMPLEMENTARY MOS FIELD-EFFECT TRANSISTORS ON HIGHRESISTIVITY SILICON SUBSTRACTES", PAGES 377-383 * |
Also Published As
Publication number | Publication date |
---|---|
GB1559583A (en) | 1980-01-23 |
CH613071A5 (fr) | 1979-08-31 |
MY8100313A (en) | 1981-12-31 |
DE2632448A1 (de) | 1977-01-20 |
US4302875A (en) | 1981-12-01 |
FR2318500B1 (fr) | 1979-08-17 |
DE2632448B2 (de) | 1981-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |