JPS5617075A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5617075A JPS5617075A JP9359579A JP9359579A JPS5617075A JP S5617075 A JPS5617075 A JP S5617075A JP 9359579 A JP9359579 A JP 9359579A JP 9359579 A JP9359579 A JP 9359579A JP S5617075 A JPS5617075 A JP S5617075A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- monitor
- region
- type
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009826 distribution Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229920006395 saturated elastomer Polymers 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To accurately estimate the characteristics of the semiconductor device by equalizing the diffusing depth of gate regions and the impurity density distribution thereof when forming a J-FET body and a monitor J-FET for measuring the saturated current of the channel thereof on the same semiconductor substrate. CONSTITUTION:A J-FET body 1 and a monitor J-FET2 are formed in a P<+>-type semiconductor substrate 7, and the drain saturated current of the FET of the body is estimated by the measured value of the punch-through voltage of the monitor FET. In order to do it, an N-type layer is first epitaxially grown on the substrate 7, is isolated via the P<+>-type region, and the channel region 5 of the body 1 is formed and the channel region 6 of the monitor 2 is formed on the epitaxial layer. Thereafter, a plurality of P<+>-type gate regions 3 are diffused in the region 5, and a plurality of P<+>-type gate regions 4 are diffused in the region 6. At this time the diffusing depth of the regions 3 and 4 are equalized, and the impurity density distributions thereof are also equalized, and an interval between the diffused openings 8' and 9' are defined as within double of the diffusing depth.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9359579A JPS5617075A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9359579A JPS5617075A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5617075A true JPS5617075A (en) | 1981-02-18 |
JPS6217390B2 JPS6217390B2 (en) | 1987-04-17 |
Family
ID=14086653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9359579A Granted JPS5617075A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5617075A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140775A (en) * | 1974-07-26 | 1976-04-05 | Thomson Csf |
-
1979
- 1979-07-20 JP JP9359579A patent/JPS5617075A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140775A (en) * | 1974-07-26 | 1976-04-05 | Thomson Csf |
Also Published As
Publication number | Publication date |
---|---|
JPS6217390B2 (en) | 1987-04-17 |
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