CA1028067A - Transistor a effet de champ a porte de schottky - Google Patents

Transistor a effet de champ a porte de schottky

Info

Publication number
CA1028067A
CA1028067A CA223,528A CA223528A CA1028067A CA 1028067 A CA1028067 A CA 1028067A CA 223528 A CA223528 A CA 223528A CA 1028067 A CA1028067 A CA 1028067A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
gate field
schottky gate
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA223,528A
Other languages
English (en)
Inventor
Heinrich Schlotterer
Jeno Tihanyi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742415408 external-priority patent/DE2415408C2/de
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1028067A publication Critical patent/CA1028067A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CA223,528A 1974-03-29 1975-04-01 Transistor a effet de champ a porte de schottky Expired CA1028067A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742415408 DE2415408C2 (de) 1974-03-29 Si-MESFET auf Isolatorsubstrat und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
CA1028067A true CA1028067A (fr) 1978-03-14

Family

ID=5911655

Family Applications (1)

Application Number Title Priority Date Filing Date
CA223,528A Expired CA1028067A (fr) 1974-03-29 1975-04-01 Transistor a effet de champ a porte de schottky

Country Status (7)

Country Link
US (1) US3997908A (fr)
JP (1) JPS50135992A (fr)
CA (1) CA1028067A (fr)
FR (1) FR2266310B1 (fr)
GB (1) GB1507091A (fr)
IT (1) IT1034678B (fr)
SE (1) SE401582B (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2529951A1 (de) * 1975-07-04 1977-01-27 Siemens Ag Lateraler, bipolarer transistor
DE2624409C2 (de) * 1976-05-31 1987-02-12 Siemens AG, 1000 Berlin und 8000 München Schottky-Transistor-Logik-Anordnung
DE2624339C2 (de) * 1976-05-31 1986-09-11 Siemens AG, 1000 Berlin und 8000 München Schottky-Transistorlogik
US4157556A (en) * 1977-01-06 1979-06-05 Varian Associates, Inc. Heterojunction confinement field effect transistor
JPS53138281A (en) * 1977-05-09 1978-12-02 Nec Corp Insulated-gate field effect transistor
US4183033A (en) * 1978-03-13 1980-01-08 National Research Development Corporation Field effect transistors
US4202001A (en) * 1978-05-05 1980-05-06 Rca Corporation Semiconductor device having grid for plating contacts
US4393578A (en) * 1980-01-02 1983-07-19 General Electric Company Method of making silicon-on-sapphire FET
GB2140617B (en) * 1980-03-03 1985-06-19 Raytheon Co Methods of forming a field effect transistor
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
USH368H (en) 1980-09-16 1987-11-03 The United States Of America As Represented By The Secretary Of The Navy Field-effect transistor
GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
SE8101994L (sv) * 1981-03-27 1982-09-28 Tove Per Arne Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
US4418470A (en) * 1981-10-21 1983-12-06 General Electric Company Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
US4688062A (en) * 1984-06-29 1987-08-18 Raytheon Company Semiconductor structure and method of manufacture
US4763183A (en) * 1984-08-01 1988-08-09 American Telephone And Telegraph Co., At&T Bell Laboratories Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method
US4636822A (en) * 1984-08-27 1987-01-13 International Business Machines Corporation GaAs short channel lightly doped drain MESFET structure and fabrication
JPH01187837A (ja) * 1988-01-22 1989-07-27 Agency Of Ind Science & Technol 半導体集積回路
JP2746482B2 (ja) * 1991-02-14 1998-05-06 三菱電機株式会社 電界効果型トランジスタ及びその製造方法
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3890632A (en) * 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same

Also Published As

Publication number Publication date
US3997908A (en) 1976-12-14
JPS50135992A (fr) 1975-10-28
SE401582B (sv) 1978-05-16
DE2415408B1 (de) 1975-09-18
DE2415408A1 (fr) 1975-09-18
GB1507091A (en) 1978-04-12
FR2266310B1 (fr) 1979-06-08
IT1034678B (it) 1979-10-10
SE7503525L (fr) 1975-09-30
FR2266310A1 (fr) 1975-10-24

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