Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
  • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/484—Connecting portions
  • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0008—Processes
  • H01L2933/0033—Processes relating to semiconductor body packages
  • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/58—Optical field-shaping elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/58—Optical field-shaping elements
  • H01L33/60—Reflective elements

Definitions

• the present invention relates to an optoelectronic component for mixing electromagnetic radiation of different wavelengths.
• an optoelectronic component for mixing electromagnetic radiation of different wavelengths.
• a first semiconductor chip can partially absorb the electromagnetic radiation of a second semiconductor chip, which degrades the light output of the optoelectronic component.
• blue emitting InGaN semiconductor chips may be colored with red
• the object of the invention is to provide an optoelectronic component which minimizes the absorption losses.
• Centrosymmetric means that the first
• Surface emitters are at least partially in a highly reflective material, especially a T1O 2
• Material for the barriers can be PBT
• the barrier serves for the complete optical separation of the inner region with the first semiconductor chips from the outer region with the second semiconductor chips.
• Figure la shows a plan view of a
• Figure lb shows a sectional view of the
• Figure lc shows a sectional view of the
• Figure ld shows a sectional view of the
• Figure 2a shows a plan view of a
• Figure 2b shows a plan view of a
• Figure 4a shows a 3-dimensional view of a
• FIG. 4b shows a sectional view of FIG
• FIG. 5b shows a sectional view of FIG
• FIG. 6 shows a sectional view of a
• FIG. 7 shows a sectional view of a
• Figure 8 shows a section of a 3-dimensional
• FIG. 1 a shows a plan view of an optoelectronic component 1.
• the optoelectronic component 1 is used for mixing electromagnetic radiation with different wavelengths, in particular in the far field.
• On a carrier 2 are first semiconductor chips 3 for emitting electromagnetic radiation in a first
• the first semiconductor chips 3 and the second semiconductor chips 4 are arranged in a single package.
• the first semiconductor chips 3 are optically separated from the second semiconductor chips 4 by a barrier 5.
• the first semiconductor chips 3 and the second semiconductor chips 4 are each centrosymmetric about a common
• the first semiconductor chips 3 are in the inner region 113, in the center of the optoelectronic component 1,
• the second semiconductor chips 4 are annular in an outer region 114 around the first
• the barrier 5 between the first semiconductor chips 3 and the second semiconductor chips 4 is annular.
• the barrier 5 has a high reflectivity of more than 90%, preferably more than 95%.
• the first semiconductor chips 3 may be formed as AlGalnP semiconductor chips.
• AlGalnP semiconductor chips emit electromagnetic radiation, preferably from the red spectral region.
• the second semiconductor chips 4 may be formed as InGaN semiconductor chips.
• InGaN semiconductor chips preferably emit electromagnetic radiation the UV to the green spectral range, particularly preferably from the blue spectral range.
• FIG. 1b shows a sectional view of the optoelectronic component from FIG. 1a.
• the highly reflective barrier 5 has a height between about 200 ym and about 2 mm, preferably a height of about 500 ym.
• the AlGalnP semiconductor chips 3 are provided with a first
• Potting material 7 shed.
• the potting material 7 may comprise silicone or epoxy resin.
• the InGaN semiconductor chips 4 are encapsulated with a second potting material 9, in particular of silicone.
• the second potting material 9 in particular of silicone.
• Potting material 9 has the shape of a planar
• FIG. 1c differs only from FIG. 1b in that, in the region of the AlGalnP semiconductor chips 3, the carrier 2 between the AlGalnP semiconductor chips 3 is lined with a third potting material 18.
• the third potting material 18 may be a white, T1O 2 filled,
• Figure ld shows a further sectional view of the
• the silicone may also be filled with ZrÜ 2 , Al 2 O 3 or ZnO.
• the highly reflective material 11 can be flush with the surface emitters 4b. On the surface emitter 4b and the highly reflective material 11 is a second potting material. 9
• Figure 2a shows a plan view of another
• Arrangement of the InGaN semiconductor chips is symmetrical about the center Z.
• Figure 2b shows a plan view of another
• Optoelectronic component 1 Within the barrier 5, InGaN semiconductor chips 4 are arranged in a rectangular shape. Outside the barrier 5 are AlGalnP -
• the center Z is the common center of symmetry for the InGaN semiconductor chips 4 and the AlGalnP semiconductor chips 3.
• Figure 3 shows a plan view of another
• Optoelectronic component 1 In the center of the Optoelectronic component 1, a single AlGalnP semiconductor chip 3 is arranged, which differs from the
• a plurality of InGaN semiconductor chips are arranged annularly around the center Z in the outer region 114.
• Figure 4a shows a 3-dimensional view of a
• a hemispherical coupling-out lens 6 whose geometry fulfills the Weierstrass condition spans the AlGalnP semiconductor chips 3.
• the InGaN semiconductor chips 4 span around in a ring-shaped manner
• the barrier 5 separates the inner region 113 with the AlGalnP semiconductor chips 3 from the outer region 114 with the InGaN semiconductor chips 4. Again, the center Z is the common one
• FIG. 4b shows a sectional view of FIG
• Embodiment in Figure lb except that over the inner region 113 in which the AlGalnP - semiconductor chips 3 are arranged a Auskoppellinse 6 is arranged.
• the coupling-out lens 6 fulfills the Weierstrass condition. This means that the radius 13 of the coupling lens 6 and the radius 12 of the emission surface in the following
• Refractive index serh ai b / refractive index L in Se The refractive index outside is 1.
• the refractive index of the lens is assumed to be 1.5.
• Figure 5a shows a 3-dimensional view of a
• the InGaN semiconductor chips 4 arranged in a circle around the center of symmetry Z are enclosed by a further, annular, barrier 8.
• the further barrier 8 has a reflectivity of greater than 90%, preferably greater than 95%.
• the InGaN semiconductor chips 4 are cast in a second potting material 9. The second
• Potting material 9 has a conversion means 17, in particular a phosphor. A portion of the electromagnetic radiation emitted by the InGaN semiconductor chips 4 from the blue spectral range is converted by the conversion means 17 into the yellow-green spectral range. The semiconductor chips 3, 4 are over
• a coupling lens 6 covers the inner
• the InGaN semiconductor chips 4b are surface emitters,
• This emission surface 14 has a certain radius 12. About the emission surface 14, the hemispherical lens 6 is spanned. The hemispherical lens 6 has a certain radius 13. The lens 6 has a refractive index 15 of about 1.5. Outside the lens 6, the refractive index of air, namely 1, is assumed. The two radii 12 and 13 are chosen so that the Weierstrass condition is met.
• Embodiments are not limited to specific feature combinations. Although some

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Manufacturing & Machinery (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Led Device Packages (AREA)

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Citations (3)

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• 2010
  • 2010-04-16 DE DE102010027875A patent/DE102010027875A1/de not_active Withdrawn
• 2011
  • 2011-03-18 WO PCT/EP2011/054106 patent/WO2011128173A1/de active Application Filing
  • 2011-03-18 CN CN201180019220.3A patent/CN102870214B/zh not_active Expired - Fee Related
  • 2011-03-18 US US13/641,650 patent/US8835931B2/en not_active Expired - Fee Related
  • 2011-03-18 CN CN201510409755.1A patent/CN104979339B/zh not_active Expired - Fee Related
  • 2011-03-18 JP JP2013504187A patent/JP5757993B2/ja not_active Expired - Fee Related
  • 2011-03-18 KR KR1020127029964A patent/KR101818554B1/ko active IP Right Grant
  • 2011-03-18 EP EP11710172A patent/EP2519971A1/de not_active Withdrawn

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