DE69926856D1 - Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren - Google Patents
Lichtemittierende Halbleitervorrichtung und HerstellungsverfahrenInfo
- Publication number
- DE69926856D1 DE69926856D1 DE69926856T DE69926856T DE69926856D1 DE 69926856 D1 DE69926856 D1 DE 69926856D1 DE 69926856 T DE69926856 T DE 69926856T DE 69926856 T DE69926856 T DE 69926856T DE 69926856 D1 DE69926856 D1 DE 69926856D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- emitting device
- semiconductor light
- semiconductor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33585398A JP4040192B2 (ja) | 1998-11-26 | 1998-11-26 | 半導体発光素子の製造方法 |
JP33585398 | 1998-11-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69926856D1 true DE69926856D1 (de) | 2005-09-29 |
DE69926856T2 DE69926856T2 (de) | 2006-05-18 |
Family
ID=18293130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69926856T Expired - Lifetime DE69926856T2 (de) | 1998-11-26 | 1999-11-25 | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US6620641B2 (de) |
EP (1) | EP1005124B1 (de) |
JP (1) | JP4040192B2 (de) |
KR (1) | KR100624598B1 (de) |
DE (1) | DE69926856T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996036297A1 (fr) | 1995-05-19 | 1996-11-21 | Kanji Inoue | Instrument de transplantation, procede pour le courber et procede pour le transplanter |
JP4644947B2 (ja) * | 2001-02-05 | 2011-03-09 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
JP2005085977A (ja) * | 2003-09-09 | 2005-03-31 | Sharp Corp | 半導体レーザ素子および半導体レーザ素子の製造方法 |
KR100586940B1 (ko) * | 2003-10-07 | 2006-06-07 | 삼성전기주식회사 | 질화갈륨계 단결정 기판의 제조방법 |
JP2005286017A (ja) * | 2004-03-29 | 2005-10-13 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
KR20060109112A (ko) * | 2005-04-15 | 2006-10-19 | 삼성전자주식회사 | 리지부를 구비하는 반도체 레이저 다이오드 및 그 제조방법 |
KR100774458B1 (ko) * | 2006-02-27 | 2007-11-08 | 엘지전자 주식회사 | 반도체 레이저 소자 및 그 제조 방법 |
TW200806829A (en) * | 2006-07-20 | 2008-02-01 | Univ Nat Central | Method for producing single crystal gallium nitride substrate |
JP4618261B2 (ja) * | 2007-03-16 | 2011-01-26 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
JP4272239B2 (ja) | 2007-03-29 | 2009-06-03 | 三菱電機株式会社 | 半導体光素子の製造方法 |
JP5347236B2 (ja) * | 2007-05-08 | 2013-11-20 | 三菱電機株式会社 | 半導体光素子の製造方法 |
CN101442091B (zh) * | 2007-11-20 | 2011-03-30 | 优利科技股份有限公司 | 运用水洗处理制造氮化镓或其它类发光二极管的方法 |
DE102007057756B4 (de) * | 2007-11-30 | 2022-03-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
US20090162956A1 (en) * | 2007-12-20 | 2009-06-25 | Ult Technology Co., Ltd. | Led fabrication method employing a water washing process |
JP2009212386A (ja) | 2008-03-05 | 2009-09-17 | Mitsubishi Electric Corp | 半導体光素子の製造方法 |
KR101004868B1 (ko) | 2008-12-17 | 2010-12-28 | 고려대학교 산학협력단 | 질화물 반도체 발광소자 및 그 제조방법 |
US10084282B1 (en) | 2017-08-14 | 2018-09-25 | The United States Of America As Represented By The Secretary Of The Air Force | Fundamental mode operation in broad area quantum cascade lasers |
US11031753B1 (en) | 2017-11-13 | 2021-06-08 | The Government Of The United States Of America As Represented By The Secretary Of The Air Force | Extracting the fundamental mode in broad area quantum cascade lasers |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5029175A (en) * | 1988-12-08 | 1991-07-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
JP2809691B2 (ja) * | 1989-04-28 | 1998-10-15 | 株式会社東芝 | 半導体レーザ |
JPH0378278A (ja) * | 1989-08-21 | 1991-04-03 | Seiko Epson Corp | 半導体レーザの製造方法 |
JPH04186686A (ja) * | 1990-11-17 | 1992-07-03 | Seiko Epson Corp | 半導体レーザ |
JP2708992B2 (ja) * | 1991-12-20 | 1998-02-04 | シャープ株式会社 | AlGaInP系半導体発光装置の製造方法 |
JPH05211372A (ja) * | 1992-01-14 | 1993-08-20 | Nec Corp | 半導体レーザの製造方法 |
JP2950712B2 (ja) * | 1993-07-27 | 1999-09-20 | シャープ株式会社 | 半導体装置の製造方法 |
KR970011146B1 (ko) * | 1993-10-06 | 1997-07-07 | 엘지전자 주식회사 | 반도체 레이저 다이오드 제조방법 |
JPH09232680A (ja) * | 1996-02-22 | 1997-09-05 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
JPH09233385A (ja) * | 1996-02-28 | 1997-09-05 | Nikon Corp | ズームレンズの制御装置及び制御方法 |
JP3963233B2 (ja) * | 1996-03-07 | 2007-08-22 | シャープ株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
KR100408531B1 (ko) * | 1996-10-31 | 2004-01-24 | 삼성전자주식회사 | GaN계 레이저 다이오드 |
JP3060973B2 (ja) * | 1996-12-24 | 2000-07-10 | 日本電気株式会社 | 選択成長法を用いた窒化ガリウム系半導体レーザの製造方法及び窒化ガリウム系半導体レーザ |
JP3764792B2 (ja) * | 1997-02-20 | 2006-04-12 | シャープ株式会社 | 窒化物半導体のエッチング方法 |
JPH10242584A (ja) * | 1997-02-28 | 1998-09-11 | Hitachi Ltd | 半導体発光素子 |
-
1998
- 1998-11-26 JP JP33585398A patent/JP4040192B2/ja not_active Expired - Fee Related
-
1999
- 1999-11-25 KR KR1019990052597A patent/KR100624598B1/ko not_active IP Right Cessation
- 1999-11-25 DE DE69926856T patent/DE69926856T2/de not_active Expired - Lifetime
- 1999-11-25 EP EP99123523A patent/EP1005124B1/de not_active Expired - Lifetime
-
2002
- 2002-06-17 US US10/172,839 patent/US6620641B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20020153528A1 (en) | 2002-10-24 |
US6620641B2 (en) | 2003-09-16 |
DE69926856T2 (de) | 2006-05-18 |
KR100624598B1 (ko) | 2006-09-18 |
JP2000164987A (ja) | 2000-06-16 |
EP1005124A2 (de) | 2000-05-31 |
EP1005124A3 (de) | 2003-04-23 |
EP1005124B1 (de) | 2005-08-24 |
KR20000035672A (ko) | 2000-06-26 |
JP4040192B2 (ja) | 2008-01-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |