DE69932686D1 - Halbleiterlichtstrahler und dessen Herstellungsverfahren - Google Patents
Halbleiterlichtstrahler und dessen HerstellungsverfahrenInfo
- Publication number
- DE69932686D1 DE69932686D1 DE69932686T DE69932686T DE69932686D1 DE 69932686 D1 DE69932686 D1 DE 69932686D1 DE 69932686 T DE69932686 T DE 69932686T DE 69932686 T DE69932686 T DE 69932686T DE 69932686 D1 DE69932686 D1 DE 69932686D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor light
- light emitter
- emitter
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0658—Self-pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27163498 | 1998-09-25 | ||
JP27163498 | 1998-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69932686D1 true DE69932686D1 (de) | 2006-09-21 |
DE69932686T2 DE69932686T2 (de) | 2007-08-09 |
Family
ID=17502809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69932686T Expired - Lifetime DE69932686T2 (de) | 1998-09-25 | 1999-09-24 | Halbleiterlichtstrahler und dessen Herstellungsverfahren |
Country Status (3)
Country | Link |
---|---|
US (2) | US6387721B1 (de) |
EP (1) | EP0989643B1 (de) |
DE (1) | DE69932686T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6807213B1 (en) * | 1999-02-23 | 2004-10-19 | Mitsubishi Chemical Corporation | Semiconductor optical device apparatus |
JP4274393B2 (ja) * | 1999-02-26 | 2009-06-03 | 富士フイルム株式会社 | 半導体発光装置 |
JP3982985B2 (ja) * | 1999-10-28 | 2007-09-26 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
WO2001042820A2 (en) * | 1999-12-02 | 2001-06-14 | Teraconnect, Inc. | Method of making optoelectronic devices using sacrificial devices |
JP3685977B2 (ja) * | 2000-04-21 | 2005-08-24 | シャープ株式会社 | 半導体発光素子およびその製造方法 |
JP4816990B2 (ja) * | 2000-08-21 | 2011-11-16 | ソニー株式会社 | 発光素子および半導体素子ならびにそれらの製造方法 |
JP2002171021A (ja) * | 2000-11-30 | 2002-06-14 | Toshiba Corp | 半導体レーザ、半導体レーザの製造方法および半導体レーザの実装方法 |
US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
JP2004055975A (ja) * | 2002-07-23 | 2004-02-19 | Sharp Corp | 半導体発光装置およびその製造方法 |
US7260130B2 (en) * | 2003-03-31 | 2007-08-21 | Sanyo Electric Co., Ltd. | Semiconductor laser device and method of fabricating the same |
US7250631B2 (en) * | 2003-10-14 | 2007-07-31 | Nichia Corporation | Semiconductor laser having protruding portion |
JP2005223070A (ja) * | 2004-02-04 | 2005-08-18 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
US7095768B2 (en) * | 2004-02-17 | 2006-08-22 | Jds Uniphase Corporation | Index guided VCSEL and method of fabrication |
JP2006080426A (ja) * | 2004-09-13 | 2006-03-23 | Sharp Corp | 発光ダイオード |
JP4956928B2 (ja) * | 2004-09-28 | 2012-06-20 | 日亜化学工業株式会社 | 半導体装置 |
JP4451371B2 (ja) * | 2004-12-20 | 2010-04-14 | シャープ株式会社 | 窒化物半導体レーザ素子 |
JP2006278577A (ja) * | 2005-03-28 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
JP4897948B2 (ja) * | 2005-09-02 | 2012-03-14 | 古河電気工業株式会社 | 半導体素子 |
CN100375303C (zh) * | 2005-10-27 | 2008-03-12 | 晶能光电(江西)有限公司 | 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法 |
JP2007157838A (ja) * | 2005-12-01 | 2007-06-21 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子 |
JP2010251458A (ja) * | 2009-04-14 | 2010-11-04 | Sony Corp | 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法 |
JP2011091163A (ja) * | 2009-10-21 | 2011-05-06 | Sumitomo Electric Ind Ltd | 半導体集積素子 |
KR20110062128A (ko) * | 2009-12-02 | 2011-06-10 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법 |
US20190067081A1 (en) * | 2016-03-30 | 2019-02-28 | Intel Corporation | Wafer edge protection for crack-free material growth |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01220492A (ja) * | 1988-02-26 | 1989-09-04 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
US5029175A (en) * | 1988-12-08 | 1991-07-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
EP0503729A3 (en) * | 1991-03-15 | 1992-12-02 | N.V. Philips' Gloeilampenfabrieken | Optoelectronic semiconductor device and method of manufacturing such a device |
KR970009670B1 (en) * | 1994-03-30 | 1997-06-17 | Samsung Electronics Co Ltd | Method of manufacture for semiconductor laserdiode |
JP3558717B2 (ja) * | 1995-02-07 | 2004-08-25 | 富士通株式会社 | レーザダイオード、その製造方法、およびかかるレーザダイオードを使った光通信システム |
DE69836932T2 (de) | 1997-03-26 | 2007-10-25 | Mitsubishi Chemical Corp. | Lichtemittierende Halbleitervorrichtung |
JPH1187831A (ja) * | 1997-09-02 | 1999-03-30 | Sony Corp | 半導体発光素子、光ピックアップ装置ならびに光記録および/または再生装置 |
-
1999
- 1999-09-24 US US09/404,376 patent/US6387721B1/en not_active Expired - Fee Related
- 1999-09-24 DE DE69932686T patent/DE69932686T2/de not_active Expired - Lifetime
- 1999-09-24 EP EP99307557A patent/EP0989643B1/de not_active Expired - Lifetime
-
2002
- 2002-03-13 US US10/096,508 patent/US6707071B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20020125488A1 (en) | 2002-09-12 |
US6387721B1 (en) | 2002-05-14 |
EP0989643A1 (de) | 2000-03-29 |
DE69932686T2 (de) | 2007-08-09 |
US6707071B2 (en) | 2004-03-16 |
EP0989643B1 (de) | 2006-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69932686D1 (de) | Halbleiterlichtstrahler und dessen Herstellungsverfahren | |
DE69838597D1 (de) | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren | |
DE69834561D1 (de) | Halbleiteranordnung und herstellungsverfahren dafür | |
DE69835941D1 (de) | Lichtemittierender Halbleitervorrichtung und Herstellungsverfahren | |
DE60045755D1 (de) | Halbleiterbauelement und dessen Herstellungsverfahren | |
DE69737588D1 (de) | Halbleiteranordnung und Herstellungsverfahren dafür | |
DE69929456D1 (de) | Nahfeldabtastkopf und herstellungsverfahren | |
DE69635410D1 (de) | Halbleiterlaser und dessen herstellungsverfahren | |
DE69935095D1 (de) | Halbleiterbauelement und deren Herstellungsverfahren | |
DE69517614D1 (de) | Halbleiterdiodenlaser und dessen Herstellungsverfahren | |
DE69733450D1 (de) | Thermoelektrischer Halbleiter und Herstellungsverfahren dafür | |
KR950034612A (ko) | 반도체 구조물 및 그 제조 방법 | |
DE69818185D1 (de) | Halbleiterverpackung und deren Herstellungsmethode | |
DE60020737D1 (de) | Sic-einkristall und herstellungsverfahren dafür | |
DE69936488D1 (de) | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren | |
DE69920640D1 (de) | Nitrid-Halbleiterlaser und dessen Herstellungsverfahren | |
DE69801342D1 (de) | Halbleiterlaser und dazugehöriges Herstellungsverfahren | |
DE69525128D1 (de) | Lichtemittierende Halbleiteranordnung und Herstellungsverfahren | |
DE69941874D1 (de) | Optielektronisches bauelement und herstellungsverfahren | |
DE69504262D1 (de) | Halbleiterlaser und dessen Herstellungsverfahren | |
DE69926856D1 (de) | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren | |
DE69712541D1 (de) | Halbleiterlaser und Herstellungsverfahren | |
FR2765347B1 (fr) | Reflecteur de bragg en semi-conducteur et procede de fabrication | |
DE69937109D1 (de) | Zahnbürste und herstellungsverfahren | |
DE69915335D1 (de) | Vollscheibenfahrzeugrad und herstellungsverfahren |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |