DE69932686D1 - Halbleiterlichtstrahler und dessen Herstellungsverfahren - Google Patents

Halbleiterlichtstrahler und dessen Herstellungsverfahren

Info

Publication number
DE69932686D1
DE69932686D1 DE69932686T DE69932686T DE69932686D1 DE 69932686 D1 DE69932686 D1 DE 69932686D1 DE 69932686 T DE69932686 T DE 69932686T DE 69932686 T DE69932686 T DE 69932686T DE 69932686 D1 DE69932686 D1 DE 69932686D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor light
light emitter
emitter
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69932686T
Other languages
English (en)
Other versions
DE69932686T2 (de
Inventor
Makiko Hashimoto
Nobuyuki Hosoi
Kenji Shimoyama
Katsushi Fujii
Yoshihito Sato
Kazumasa Kiyomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of DE69932686D1 publication Critical patent/DE69932686D1/de
Application granted granted Critical
Publication of DE69932686T2 publication Critical patent/DE69932686T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69932686T 1998-09-25 1999-09-24 Halbleiterlichtstrahler und dessen Herstellungsverfahren Expired - Lifetime DE69932686T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27163498 1998-09-25
JP27163498 1998-09-25

Publications (2)

Publication Number Publication Date
DE69932686D1 true DE69932686D1 (de) 2006-09-21
DE69932686T2 DE69932686T2 (de) 2007-08-09

Family

ID=17502809

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69932686T Expired - Lifetime DE69932686T2 (de) 1998-09-25 1999-09-24 Halbleiterlichtstrahler und dessen Herstellungsverfahren

Country Status (3)

Country Link
US (2) US6387721B1 (de)
EP (1) EP0989643B1 (de)
DE (1) DE69932686T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6807213B1 (en) * 1999-02-23 2004-10-19 Mitsubishi Chemical Corporation Semiconductor optical device apparatus
JP4274393B2 (ja) * 1999-02-26 2009-06-03 富士フイルム株式会社 半導体発光装置
JP3982985B2 (ja) * 1999-10-28 2007-09-26 シャープ株式会社 半導体レーザ素子の製造方法
WO2001042820A2 (en) * 1999-12-02 2001-06-14 Teraconnect, Inc. Method of making optoelectronic devices using sacrificial devices
JP3685977B2 (ja) * 2000-04-21 2005-08-24 シャープ株式会社 半導体発光素子およびその製造方法
JP4816990B2 (ja) * 2000-08-21 2011-11-16 ソニー株式会社 発光素子および半導体素子ならびにそれらの製造方法
JP2002171021A (ja) * 2000-11-30 2002-06-14 Toshiba Corp 半導体レーザ、半導体レーザの製造方法および半導体レーザの実装方法
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
JP2004055975A (ja) * 2002-07-23 2004-02-19 Sharp Corp 半導体発光装置およびその製造方法
US7260130B2 (en) * 2003-03-31 2007-08-21 Sanyo Electric Co., Ltd. Semiconductor laser device and method of fabricating the same
US7250631B2 (en) * 2003-10-14 2007-07-31 Nichia Corporation Semiconductor laser having protruding portion
JP2005223070A (ja) * 2004-02-04 2005-08-18 Toshiba Corp 半導体発光素子及び半導体発光装置
US7095768B2 (en) * 2004-02-17 2006-08-22 Jds Uniphase Corporation Index guided VCSEL and method of fabrication
JP2006080426A (ja) * 2004-09-13 2006-03-23 Sharp Corp 発光ダイオード
JP4956928B2 (ja) * 2004-09-28 2012-06-20 日亜化学工業株式会社 半導体装置
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP2006278577A (ja) * 2005-03-28 2006-10-12 Sanyo Electric Co Ltd 半導体レーザ装置
JP4897948B2 (ja) * 2005-09-02 2012-03-14 古河電気工業株式会社 半導体素子
CN100375303C (zh) * 2005-10-27 2008-03-12 晶能光电（江西）有限公司 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法
JP2007157838A (ja) * 2005-12-01 2007-06-21 Matsushita Electric Ind Co Ltd 半導体レーザ素子
JP2010251458A (ja) * 2009-04-14 2010-11-04 Sony Corp 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法
JP2011091163A (ja) * 2009-10-21 2011-05-06 Sumitomo Electric Ind Ltd 半導体集積素子
KR20110062128A (ko) * 2009-12-02 2011-06-10 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
US20190067081A1 (en) * 2016-03-30 2019-02-28 Intel Corporation Wafer edge protection for crack-free material growth

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220492A (ja) * 1988-02-26 1989-09-04 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
US5029175A (en) * 1988-12-08 1991-07-02 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
EP0503729A3 (en) * 1991-03-15 1992-12-02 N.V. Philips' Gloeilampenfabrieken Optoelectronic semiconductor device and method of manufacturing such a device
KR970009670B1 (en) * 1994-03-30 1997-06-17 Samsung Electronics Co Ltd Method of manufacture for semiconductor laserdiode
JP3558717B2 (ja) * 1995-02-07 2004-08-25 富士通株式会社 レーザダイオード、その製造方法、およびかかるレーザダイオードを使った光通信システム
DE69836932T2 (de) 1997-03-26 2007-10-25 Mitsubishi Chemical Corp. Lichtemittierende Halbleitervorrichtung
JPH1187831A (ja) * 1997-09-02 1999-03-30 Sony Corp 半導体発光素子、光ピックアップ装置ならびに光記録および／または再生装置

Also Published As

Publication number Publication date
US20020125488A1 (en) 2002-09-12
US6387721B1 (en) 2002-05-14
EP0989643A1 (de) 2000-03-29
DE69932686T2 (de) 2007-08-09
US6707071B2 (en) 2004-03-16
EP0989643B1 (de) 2006-08-09

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