DE69841384D1 - Leistungshalbleiteranordnung mit halbisolierendem Substrat - Google Patents

Leistungshalbleiteranordnung mit halbisolierendem Substrat

Info

Publication number
DE69841384D1
DE69841384D1 DE69841384T DE69841384T DE69841384D1 DE 69841384 D1 DE69841384 D1 DE 69841384D1 DE 69841384 T DE69841384 T DE 69841384T DE 69841384 T DE69841384 T DE 69841384T DE 69841384 D1 DE69841384 D1 DE 69841384D1
Authority
DE
Germany
Prior art keywords
epitaxial layer
semi
source
insulating
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841384T
Other languages
English (en)
Inventor
James Albert Cooper
Michael R Melloch
Jayarama Shenoy
Jan Spitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE69841384D1 publication Critical patent/DE69841384D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69841384T 1997-06-23 1998-06-23 Leistungshalbleiteranordnung mit halbisolierendem Substrat Expired - Lifetime DE69841384D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5056297P 1997-06-23 1997-06-23
PCT/US1998/013003 WO1998059374A2 (en) 1997-06-23 1998-06-23 Insulated gate power semiconductor device having a semi-insulating semiconductor substrate

Publications (1)

Publication Number Publication Date
DE69841384D1 true DE69841384D1 (de) 2010-01-28

Family

ID=21965975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841384T Expired - Lifetime DE69841384D1 (de) 1997-06-23 1998-06-23 Leistungshalbleiteranordnung mit halbisolierendem Substrat

Country Status (10)

Country Link
US (1) US6515302B1 (de)
EP (1) EP0993688B1 (de)
JP (1) JP2002506569A (de)
KR (1) KR100553650B1 (de)
CN (1) CN1156017C (de)
AT (1) ATE452426T1 (de)
AU (1) AU8261498A (de)
CA (1) CA2295248C (de)
DE (1) DE69841384D1 (de)
WO (1) WO1998059374A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3428459B2 (ja) * 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
WO2000060670A2 (de) * 1999-03-31 2000-10-12 Siced Electronics Development Gmbh & Co. Kg Integrierte halbleitervorrichtung mit einem lateralen leistungselement
US6396080B2 (en) * 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
JP4653704B2 (ja) * 1999-05-21 2011-03-16 関西電力株式会社 半導体装置
US6323506B1 (en) * 1999-12-21 2001-11-27 Philips Electronics North America Corporation Self-aligned silicon carbide LMOSFET
EP1358681A4 (de) * 2001-01-03 2008-04-30 Univ Mississippi Siliciumcarbid- und verwandte transistoren mit grosser bandlücke zur halbisolierenden epitaxie für schnelle hochleistungsanwendungen
CN100403549C (zh) * 2002-12-19 2008-07-16 松下电器产业株式会社 半导体器件及保持电路
US20080038890A1 (en) * 2006-08-10 2008-02-14 General Electric Company Method for improved trench protection in vertical umosfet devices
CN102569350A (zh) * 2012-02-10 2012-07-11 上海先进半导体制造股份有限公司 具有背封的igbt器件结构及其制造方法
KR102056037B1 (ko) 2017-02-14 2019-12-13 닛산 지도우샤 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
US11251300B2 (en) 2018-04-19 2022-02-15 Nissan Motor Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
KR102625172B1 (ko) * 2022-09-08 2024-01-15 주식회사 현성그린 자동차용 접이식 주차금지장치
CN116053303A (zh) * 2023-03-17 2023-05-02 泰科天润半导体科技（北京）有限公司 一种抑制热纵向扩散的横向功率碳化硅mosfet的制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
US3863330A (en) * 1973-08-02 1975-02-04 Motorola Inc Self-aligned double-diffused MOS devices
US3846822A (en) * 1973-10-05 1974-11-05 Bell Telephone Labor Inc Methods for making field effect transistors
DE4325804C3 (de) * 1993-07-31 2001-08-09 Daimler Chrysler Ag Verfahren zum Herstellen von hochohmigem Siliziumkarbid
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
TW286435B (de) * 1994-07-27 1996-09-21 Siemens Ag
JPH08213606A (ja) * 1995-02-06 1996-08-20 Fuji Electric Co Ltd 炭化ケイ素横形高耐圧ｍｏｓｆｅｔ
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US5877515A (en) * 1995-10-10 1999-03-02 International Rectifier Corporation SiC semiconductor device
US6011278A (en) * 1997-10-28 2000-01-04 Philips Electronics North America Corporation Lateral silicon carbide semiconductor device having a drift region with a varying doping level

Also Published As

Publication number Publication date
KR20010020486A (ko) 2001-03-15
US6515302B1 (en) 2003-02-04
JP2002506569A (ja) 2002-02-26
AU8261498A (en) 1999-01-04
EP0993688A1 (de) 2000-04-19
CA2295248A1 (en) 1998-12-30
ATE452426T1 (de) 2010-01-15
EP0993688B1 (de) 2009-12-16
CN1156017C (zh) 2004-06-30
WO1998059374A3 (en) 1999-03-25
CA2295248C (en) 2006-08-29
WO1998059374A2 (en) 1998-12-30
CN1286806A (zh) 2001-03-07
KR100553650B1 (ko) 2006-02-24

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