SE9601179D0 - A field controlled semiconductor device of SiC and a method for production thereof - Google Patents

A field controlled semiconductor device of SiC and a method for production thereof

Info

Publication number
SE9601179D0
SE9601179D0 SE9601179A SE9601179A SE9601179D0 SE 9601179 D0 SE9601179 D0 SE 9601179D0 SE 9601179 A SE9601179 A SE 9601179A SE 9601179 A SE9601179 A SE 9601179A SE 9601179 D0 SE9601179 D0 SE 9601179D0
Authority
SE
Sweden
Prior art keywords
layer
trench
sic
semiconductor device
controlled semiconductor
Prior art date
Application number
SE9601179A
Other languages
English (en)
Inventor
Mietek Bakowski
Christopher Harris
Ulf Gustafsson
Mats Andersson
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9601179A priority Critical patent/SE9601179D0/sv
Publication of SE9601179D0 publication Critical patent/SE9601179D0/sv
Priority to US08/636,940 priority patent/US5773849A/en
Priority to PCT/SE1997/000451 priority patent/WO1997036316A2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
SE9601179A 1996-03-27 1996-03-27 A field controlled semiconductor device of SiC and a method for production thereof SE9601179D0 (sv)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE9601179A SE9601179D0 (sv) 1996-03-27 1996-03-27 A field controlled semiconductor device of SiC and a method for production thereof
US08/636,940 US5773849A (en) 1996-03-27 1996-04-24 Field of the invention
PCT/SE1997/000451 WO1997036316A2 (en) 1996-03-27 1997-03-18 A FIELD CONTROLLED SEMICONDUCTOR DEVICE OF SiC AND A METHOD FOR PRODUCTION THEREOF

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9601179A SE9601179D0 (sv) 1996-03-27 1996-03-27 A field controlled semiconductor device of SiC and a method for production thereof
US08/636,940 US5773849A (en) 1996-03-27 1996-04-24 Field of the invention

Publications (1)

Publication Number Publication Date
SE9601179D0 true SE9601179D0 (sv) 1996-03-27

Family

ID=26662562

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9601179A SE9601179D0 (sv) 1996-03-27 1996-03-27 A field controlled semiconductor device of SiC and a method for production thereof

Country Status (3)

Country Link
US (1) US5773849A (sv)
SE (1) SE9601179D0 (sv)
WO (1) WO1997036316A2 (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573534B1 (en) 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
US6150671A (en) * 1996-04-24 2000-11-21 Abb Research Ltd. Semiconductor device having high channel mobility and a high breakdown voltage for high power applications
US6057558A (en) * 1997-03-05 2000-05-02 Denson Corporation Silicon carbide semiconductor device and manufacturing method thereof
JPH11251592A (ja) 1998-01-05 1999-09-07 Denso Corp 炭化珪素半導体装置
US6221700B1 (en) 1998-07-31 2001-04-24 Denso Corporation Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities
JP3899231B2 (ja) 2000-12-18 2007-03-28 株式会社豊田中央研究所 半導体装置
JP3973395B2 (ja) * 2001-10-16 2007-09-12 株式会社豊田中央研究所 半導体装置とその製造方法
JP4899405B2 (ja) * 2004-11-08 2012-03-21 株式会社デンソー 炭化珪素半導体装置およびその製造方法
KR102406116B1 (ko) * 2018-04-27 2022-06-07 현대자동차 주식회사 반도체 소자 및 그 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3823352A (en) * 1972-12-13 1974-07-09 Bell Telephone Labor Inc Field effect transistor structures and methods
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
JP2623850B2 (ja) * 1989-08-25 1997-06-25 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
KR920010963A (ko) * 1990-11-23 1992-06-27 오가 노리오 Soi형 종채널 fet 및 그 제조방법
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
US5397717A (en) * 1993-07-12 1995-03-14 Motorola, Inc. Method of fabricating a silicon carbide vertical MOSFET
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
EP0676814B1 (en) * 1994-04-06 2006-03-22 Denso Corporation Process of producing trench semiconductor device
US5399883A (en) * 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same
JPH08204179A (ja) * 1995-01-26 1996-08-09 Fuji Electric Co Ltd 炭化ケイ素トレンチｍｏｓｆｅｔ

Also Published As

Publication number Publication date
WO1997036316A3 (en) 1997-11-20
WO1997036316A2 (en) 1997-10-02
US5773849A (en) 1998-06-30

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