CN1156017C - 宽带隙半导体中的功率器件 - Google Patents

宽带隙半导体中的功率器件 Download PDF

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CN1156017C
CN1156017C CNB988065207A CN98806520A CN1156017C CN 1156017 C CN1156017 C CN 1156017C CN B988065207 A CNB988065207 A CN B988065207A CN 98806520 A CN98806520 A CN 98806520A CN 1156017 C CN1156017 C CN 1156017C
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小詹姆斯·艾伯特·库珀
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迈克尔·R·梅洛奇
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贾亚拉玛·谢诺伊
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简·斯皮茨
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

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Abstract

本发明描述了一优选器件，它包括在结隔离衬底或半绝缘衬底(例如碳化硅)上制造的诸如超大功率开关器件的半导体器件。

Description

宽带隙半导体中的功率器件
技术领域
本发明一般涉及半导体器件，尤其涉及在诸如半绝缘碳化硅的半绝缘衬底上制造的高压/高功率器件。对于其他的背景资料，包括与用在本发明器件中的基本半导体器件元件有关的资料，可以参考以下文献：例如，第5448081；5378912；4983538号美国专利。这些在此一并作为参考。
背景技术
日本公开号08213606(1996年8月20日出版)的专利摘要描述了具有n+衬底的横向高击穿强度的MOSFET。德国公开号4325804 A1描述了从低阻抗SiC初始材料生产高阻抗SiC的工艺。美国专利号5611955描述了用于半导体器件的高阻抗碳化硅衬底。美国专利号5378912描述了横向绝缘体基半导体(SOI)器件。
发明内容
本发明的目的之一是提供在不需要必须通过外延生长的很厚的漂移区的情况下，能够阻断很高电压的器件。
本发明的另一目的是提供诸如超高压(高于1000V至高于10000V)功率开关器件的横向功率器件结构，它是在具有远大于硅的击穿场的宽带隙半导体内的结隔离或半绝缘衬底上制造的。
本发明的另一目的是在碳化硅上提供横向金属氧化物半导体场效应晶体管(MOSFET)或横向绝缘栅双极晶体管(IGBT)形式的横向功率器件。
因此本发明的一个优选实施例提供了在半绝缘衬底尤其是半绝缘碳化硅衬底上的外延层(外延生长层)内制造的横向功率器件结构。例如，通过掺杂钒或类似掺杂材料可以获得该半绝缘衬底。该优选器件包括半绝缘碳化硅衬底，以及与该半绝缘衬底(例如，掺杂水平大约为2-5×1015cm-3)相邻的外延生长漂移区(例如N-)。在该外延层内提供了横向半导体器件，例如绝缘栅场效应晶体管(或MOSFET)或IGBT。该类器件一般包括源和漏区(例如，都是N+)，绝缘层(例如SiO2)和诸如用多晶硅形成的栅。正如本领域技术人员所知，也可以包括其他常规半导体器件部件。
根据本发明的一方面，提供一种功率开关器件，包括：衬底；邻近上述衬底的漂移区层；在该漂移区层内提供的源区，漏区和沟道区，其中所述沟道区包围所述源区的下边界；上述沟道区上的绝缘层；以及邻近上述绝缘层的栅，其特征在于上述衬底是半绝缘衬底。
根据本发明的另一方面，提供一种功率开关器件，包括：衬底；邻近上述衬底的漂移区层；在该漂移区层内提供的源区，漏区和沟道区，其中所述沟道区包围所述源区的下边界；上述沟道区上的绝缘层；以及邻近上述绝缘层的栅，其特征在于上述衬底是结隔离的衬底。
附图说明
从以下的描述和附图中可以明显地看出本发明的其他目的，实施例和特征。
图1显示了本发明的优选横向功率器件。
图2显示了在本发明的示例横向功率器件中的一些阻断电压的耗尽边沿。
具体实施方式
为了加深对本发明原理的理解，现在将参考确定的优选实施例并且将使用特定的语言来描述该实施例。
图1显示了本发明的优选横向功率器件11。器件11包括半绝缘层12，例如半绝缘碳化硅衬底。与层12相邻的是提供漂移区13(例如N-)的外延生长层。例如，漂移区13可以掺杂至2-5×1015原子/cm-3的水平，厚度可以直到大约15微米，例如大约10至15微米。层13内提供了源区14和漏区15(其特性与漂移区相反，例如在示例的器件中是N+；或者为了提供IGBT，漏区15可以是P+)以及沟道区16。同样在器件11内提供了覆盖该沟道区16的绝缘层17(例如SiO2)和邻近该绝缘层17的栅18，例如用多晶硅(掺杂的)形成。该器件可以包括其它部件，例如用来提供源和漏引线的诸如金属的导电材料。
在诸如图1中示例的示例性器件中，(假设掺杂是2×1015/cm-3的水平)，在关断或阻断状态下，在雪崩击穿发生前，该PN结将耗尽区扩展至N-区约56微米。这将对应漏电压V＝Emax/2Vd＝5600伏。因为具有厚度在10-15微米间外延层的碳化硅片当前可以商品化获得，根据本发明优选器件的横向结构就特别有优势。在本发明中，该半绝缘衬底确保该衬底在耗尽的漂移区下不是等电位边界，这将限制该基(P)区和漏(N+)区下区域电场的范围。图2显示的是在本发明的示例器件中，一些阻断电压的耗尽区近似边沿。

Claims (8)

1.功率开关器件，包括：
衬底(12)；
邻近上述衬底(12)的漂移区层(13)；
在该漂移区层(13)内提供的源区(14)，漏区(15)和沟道区(16)，其中所述沟道区(16)包围所述源区(14)的下边界；
上述沟道区(16)上的绝缘层(17)；以及
邻近上述绝缘层(17)的栅(18)，
其特征在于上述衬底(12)是半绝缘衬底。
2.权利要求1的器件，它是晶体管。
3.权利要求2的器件，它是绝缘栅场效应晶体管。
4.权利要求2的器件，它是绝缘栅双极晶体管。
5.权利要求1的器件，其中该源(14)和漏(15)是N+，沟道(16)是P，而该漂移区(13)是N-。
6.权利要求1的器件，其中该半绝缘衬底(12)是碳化硅。
7.权利要求6的器件，其中该半绝缘衬底(12)掺有钒。
8.功率开关器件，包括：
衬底(12)；
邻近上述衬底(12)的漂移区层(13)；
在该漂移区层(13)内提供的源区(14)，漏区(15)和沟道区(16)，其中所述沟道区(16)包围所述源区(14)的下边界；
上述沟道区(16)上的绝缘层(17)；以及
邻近上述绝缘层(17)的栅(18)，
其特征在于上述衬底(12)是结隔离的衬底。
CNB988065207A 1997-06-23 1998-06-23 宽带隙半导体中的功率器件 Expired - Fee Related CN1156017C (zh)

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JP (1) JP2002506569A (zh)
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AU (1) AU8261498A (zh)
CA (1) CA2295248C (zh)
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RU2719569C1 (ru) * 2017-02-14 2020-04-21 Ниссан Мотор Ко., Лтд. Полупроводниковое устройство и способ его изготовления
US11251300B2 (en) 2018-04-19 2022-02-15 Nissan Motor Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
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CN116053303A (zh) * 2023-03-17 2023-05-02 泰科天润半导体科技（北京）有限公司 一种抑制热纵向扩散的横向功率碳化硅mosfet的制造方法

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ATE452426T1 (de) 2010-01-15
KR100553650B1 (ko) 2006-02-24
EP0993688A1 (en) 2000-04-19
AU8261498A (en) 1999-01-04
JP2002506569A (ja) 2002-02-26
KR20010020486A (ko) 2001-03-15
CA2295248C (en) 2006-08-29
US6515302B1 (en) 2003-02-04
WO1998059374A2 (en) 1998-12-30
CA2295248A1 (en) 1998-12-30
CN1286806A (zh) 2001-03-07
DE69841384D1 (de) 2010-01-28
WO1998059374A3 (en) 1999-03-25

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