DE69811773D1 - Nichtflüchtige Speicheranordnung und Programmierverfahren - Google Patents

Nichtflüchtige Speicheranordnung und Programmierverfahren

Info

Publication number
DE69811773D1
DE69811773D1 DE69811773T DE69811773T DE69811773D1 DE 69811773 D1 DE69811773 D1 DE 69811773D1 DE 69811773 T DE69811773 T DE 69811773T DE 69811773 T DE69811773 T DE 69811773T DE 69811773 D1 DE69811773 D1 DE 69811773D1
Authority
DE
Germany
Prior art keywords
memory device
volatile memory
programming method
programming
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69811773T
Other languages
English (en)
Other versions
DE69811773T2 (de
Inventor
Dong-Gi Lee
Tae-Sung Jung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69811773D1 publication Critical patent/DE69811773D1/de
Publication of DE69811773T2 publication Critical patent/DE69811773T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
DE69811773T 1997-05-19 1998-05-19 Nichtflüchtige Speicheranordnung und Programmierverfahren Expired - Fee Related DE69811773T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970019239A KR100252476B1 (ko) 1997-05-19 1997-05-19 플레이트 셀 구조의 전기적으로 소거 및 프로그램 가능한 셀들을 구비한 불 휘발성 반도체 메모리 장치및 그것의 프로그램 방법

Publications (2)

Publication Number Publication Date
DE69811773D1 true DE69811773D1 (de) 2003-04-10
DE69811773T2 DE69811773T2 (de) 2003-12-04

Family

ID=19506220

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69811773T Expired - Fee Related DE69811773T2 (de) 1997-05-19 1998-05-19 Nichtflüchtige Speicheranordnung und Programmierverfahren

Country Status (7)

Country Link
US (1) US6044017A (de)
EP (1) EP0880143B1 (de)
JP (1) JP3821579B2 (de)
KR (1) KR100252476B1 (de)
CN (1) CN1125467C (de)
DE (1) DE69811773T2 (de)
TW (1) TW379327B (de)

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JP3999900B2 (ja) 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
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KR100476930B1 (ko) * 2002-09-04 2005-03-16 삼성전자주식회사 피이크전류를 줄이는 플래쉬메모리
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JP4057990B2 (ja) * 2003-10-23 2008-03-05 東芝マイクロエレクトロニクス株式会社 半導体集積回路装置
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JP4417813B2 (ja) * 2004-10-01 2010-02-17 株式会社東芝 半導体記憶装置及びメモリカード
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JP4761872B2 (ja) * 2005-08-01 2011-08-31 株式会社東芝 不揮発性半導体記憶装置
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US7436703B2 (en) * 2005-12-27 2008-10-14 Sandisk Corporation Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
US7362615B2 (en) * 2005-12-27 2008-04-22 Sandisk Corporation Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
KR100725993B1 (ko) * 2005-12-28 2007-06-08 삼성전자주식회사 누설 전류를 방지하는 로우 디코더 회로 및 이를 구비하는반도체 메모리 장치
JP2007184605A (ja) * 2006-01-04 2007-07-19 Hynix Semiconductor Inc 非揮発性メモリ素子、その製造方法及びそのプログラム方法
DE602006021635D1 (de) 2006-03-16 2011-06-09 Freescale Semiconductor Inc Nichtflüchtiger speicherbaustein und programmierbare spannungsreferenz für einen nichtflüchtigen speicherbaustein
US7952937B2 (en) 2006-03-16 2011-05-31 Freescale Semiconductor, Inc. Wordline driver for a non-volatile memory device, a non-volatile memory device and method
US8077521B2 (en) 2006-03-16 2011-12-13 Freescale Semiconductor, Inc. Bitline current generator for a non-volatile memory array and a non-volatile memory array
US7951669B2 (en) 2006-04-13 2011-05-31 Sandisk Corporation Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element
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US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US20070281105A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070277735A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20100024732A1 (en) * 2006-06-02 2010-02-04 Nima Mokhlesi Systems for Flash Heating in Atomic Layer Deposition
US7593259B2 (en) * 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
JP2008103643A (ja) * 2006-10-20 2008-05-01 Toshiba Corp 不揮発性半導体メモリ
US7508710B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Operating non-volatile memory with boost structures
US7508703B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Non-volatile memory with boost structures
US7696035B2 (en) * 2006-11-13 2010-04-13 Sandisk Corporation Method for fabricating non-volatile memory with boost structures
US20080251833A1 (en) * 2007-04-12 2008-10-16 Michael Specht Integrated circuits and methods of manufacture
KR100897603B1 (ko) * 2007-06-20 2009-05-14 삼성전자주식회사 반도체 메모리 장치
US7781286B2 (en) * 2007-06-25 2010-08-24 Sandisk Corporation Method for fabricating non-volatile storage with individually controllable shield plates between storage elements
US7808826B2 (en) * 2007-06-25 2010-10-05 Sandisk Corporation Non-volatile storage with individually controllable shield plates between storage elements
US7636260B2 (en) * 2007-06-25 2009-12-22 Sandisk Corporation Method for operating non-volatile storage with individually controllable shield plates between storage elements
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KR101358752B1 (ko) * 2007-08-06 2014-02-06 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템 및그것의 프로그램 방법
US7672163B2 (en) * 2007-09-14 2010-03-02 Sandisk Corporation Control gate line architecture
KR101422705B1 (ko) * 2008-04-30 2014-07-25 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 프로그램 방법
KR20110001063A (ko) * 2009-06-29 2011-01-06 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
KR101076167B1 (ko) * 2009-12-31 2011-10-21 주식회사 하이닉스반도체 반도체 메모리 장치의 블럭 디코더
US8467263B2 (en) * 2010-06-25 2013-06-18 Intel Corporation Memory write operation methods and circuits
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system
JP5249394B2 (ja) * 2011-09-28 2013-07-31 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR101982141B1 (ko) * 2013-01-04 2019-05-27 한국전자통신연구원 이이피롬 셀 및 이이피롬 장치
US9466373B2 (en) * 2013-12-27 2016-10-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device
US10192875B2 (en) 2014-10-14 2019-01-29 Ememory Technology Inc. Non-volatile memory with protective stress gate
US9362001B2 (en) * 2014-10-14 2016-06-07 Ememory Technology Inc. Memory cell capable of operating under low voltage conditions
JP2017147005A (ja) * 2016-02-16 2017-08-24 ルネサスエレクトロニクス株式会社 フラッシュメモリ
US10090032B2 (en) * 2016-05-26 2018-10-02 Taiwan Semiconductor Manufacturing Company Limited Word line driving unit with a boost voltage generator and memory device including the same
KR102345713B1 (ko) * 2020-10-27 2021-12-31 화인칩스 주식회사 Eeprom 메모리 셀 구동장치
US11894059B2 (en) * 2021-07-28 2024-02-06 SK Hynix Inc. Apparatus and method for programming data in a non-volatile memory device

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KR0167874B1 (ko) * 1993-06-29 1999-01-15 사토 후미오 반도체 기억장치
KR0170296B1 (ko) * 1995-09-19 1999-03-30 김광호 비휘발성 메모리소자
KR100207504B1 (ko) * 1996-03-26 1999-07-15 윤종용 불휘발성 메모리소자, 그 제조방법 및 구동방법

Also Published As

Publication number Publication date
EP0880143B1 (de) 2003-03-05
KR19980083789A (ko) 1998-12-05
DE69811773T2 (de) 2003-12-04
CN1199909A (zh) 1998-11-25
EP0880143A3 (de) 1999-09-08
EP0880143A2 (de) 1998-11-25
TW379327B (en) 2000-01-11
JP3821579B2 (ja) 2006-09-13
US6044017A (en) 2000-03-28
KR100252476B1 (ko) 2000-04-15
CN1125467C (zh) 2003-10-22
JPH10334682A (ja) 1998-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee