DE69604452D1 - Verfahren zur Herstellung polykristalliner Halbleiter - Google Patents

Verfahren zur Herstellung polykristalliner Halbleiter

Info

Publication number
DE69604452D1
DE69604452D1 DE69604452T DE69604452T DE69604452D1 DE 69604452 D1 DE69604452 D1 DE 69604452D1 DE 69604452 T DE69604452 T DE 69604452T DE 69604452 T DE69604452 T DE 69604452T DE 69604452 D1 DE69604452 D1 DE 69604452D1
Authority
DE
Germany
Prior art keywords
production
polycrystalline semiconductors
semiconductors
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69604452T
Other languages
English (en)
Other versions
DE69604452T2 (de
Inventor
Tetsuhiro Okuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69604452D1 publication Critical patent/DE69604452D1/de
Publication of DE69604452T2 publication Critical patent/DE69604452T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
DE69604452T 1995-06-15 1996-06-13 Verfahren zur Herstellung polykristalliner Halbleiter Expired - Lifetime DE69604452T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14917995A JP3242292B2 (ja) 1995-06-15 1995-06-15 多結晶半導体の製造方法および製造装置

Publications (2)

Publication Number Publication Date
DE69604452D1 true DE69604452D1 (de) 1999-11-04
DE69604452T2 DE69604452T2 (de) 2000-02-10

Family

ID=15469531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604452T Expired - Lifetime DE69604452T2 (de) 1995-06-15 1996-06-13 Verfahren zur Herstellung polykristalliner Halbleiter

Country Status (4)

Country Link
US (1) US5714004A (de)
EP (1) EP0748884B1 (de)
JP (1) JP3242292B2 (de)
DE (1) DE69604452T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3388664B2 (ja) * 1995-12-28 2003-03-24 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP3090057B2 (ja) * 1996-08-07 2000-09-18 昭和電工株式会社 短波長発光素子
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
DE102005013410B4 (de) 2005-03-23 2008-01-31 Deutsche Solar Ag Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen
EP1974077A2 (de) * 2006-01-20 2008-10-01 BP Corporation North America Inc. Verfahren und vorrichtungen zur herstellung von monokristallin-formsilicium und monokristallin-formsiliciumkörper für die fotovoltaik
DE102006017622B4 (de) * 2006-04-12 2008-03-27 Schott Ag Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium
US8057598B2 (en) * 2006-06-13 2011-11-15 Young Sang Cho Manufacturing equipment for polysilicon ingot
FR2908125B1 (fr) * 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
US20080257254A1 (en) * 2007-04-17 2008-10-23 Dieter Linke Large grain, multi-crystalline semiconductor ingot formation method and system
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
CN101796226A (zh) * 2007-07-20 2010-08-04 Bp北美公司 由籽晶制造铸造硅的方法
WO2009015168A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing geometric multi-crystalline cast materials
US8709154B2 (en) 2007-07-25 2014-04-29 Amg Idealcast Solar Corporation Methods for manufacturing monocrystalline or near-monocrystalline cast materials
DE102007038851A1 (de) 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
TW201012988A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Gas recirculation heat exchanger for casting silicon
US20100101387A1 (en) * 2008-10-24 2010-04-29 Kedar Prasad Gupta Crystal growing system and method thereof
CN102758242B (zh) * 2011-04-25 2015-04-08 江西赛维Ldk太阳能高科技有限公司 一种单晶硅铸锭的装料方法及单晶硅铸锭方法
US9493357B2 (en) * 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
CN102605418A (zh) * 2012-01-16 2012-07-25 上澎太阳能科技(嘉兴)有限公司 太阳能电池基板、太阳能电池的制造方法及其使用的坩埚
WO2013112231A1 (en) * 2012-01-27 2013-08-01 Gtat Corporation Method of producing monocrystalline silicon
TWI465616B (zh) * 2012-07-13 2014-12-21 Sino American Silicon Prod Inc 定向凝固裝置、矽鑄錠製造方法、及模板式引晶結構
KR101411275B1 (ko) * 2012-09-06 2014-06-25 주식회사수성기술 태양전지용 다결정 실리콘 제조장치 및 그 제조방법
CN103215633B (zh) * 2013-04-10 2016-04-13 衡水英利新能源有限公司 一种多晶硅的铸锭方法
CN103541002B (zh) * 2013-10-10 2016-03-30 青岛隆盛晶硅科技有限公司 应用于多晶硅铸锭的双电源自适应控制工艺
CN103668450B (zh) * 2013-12-02 2016-04-13 青岛隆盛晶硅科技有限公司 可减少多晶硅铸锭中细晶产生的铸锭工艺
CN103898603A (zh) * 2014-04-29 2014-07-02 南通综艺新材料有限公司 一种双电源多晶硅铸锭工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898051A (en) * 1973-12-28 1975-08-05 Crystal Syst Crystal growing
CH624151A5 (de) * 1976-08-05 1981-07-15 Alusuisse
DE2745247C3 (de) * 1977-10-07 1980-03-13 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren und Vorrichtung zur semikontinuierlichen Herstellung von Siliciumformkörpern
US4133969A (en) * 1978-01-03 1979-01-09 Zumbrunnen Allen D High frequency resistance melting furnace
JPS6024845B2 (ja) * 1980-07-09 1985-06-14 東レ株式会社 マルチ繊維束内空間部内在型繊維
JPS5920804B2 (ja) * 1981-09-28 1984-05-15 日曹マスタ−ビルダ−ズ株式会社 コンクリ−ト堰堤中への放流管埋設方法
JPS62260710A (ja) * 1986-05-06 1987-11-13 Osaka Titanium Seizo Kk 多結晶シリコン半導体鋳造法
JPH02229791A (ja) * 1989-03-03 1990-09-12 Furukawa Electric Co Ltd:The 化合物半導体単結晶製造装置
US5162072A (en) * 1990-12-11 1992-11-10 General Electric Company Apparatus and method for control of melt flow pattern in a crystal growth process
GB2279585B (en) * 1993-07-08 1996-11-20 Crystalox Ltd Crystallising molten materials

Also Published As

Publication number Publication date
DE69604452T2 (de) 2000-02-10
JP3242292B2 (ja) 2001-12-25
US5714004A (en) 1998-02-03
EP0748884A1 (de) 1996-12-18
JPH092897A (ja) 1997-01-07
EP0748884B1 (de) 1999-09-29

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