DE69512850D1 - Halbleiter-Diamant-Vorrichtung mit verbessertem Metall-Diamant-Kontakt - Google Patents
Halbleiter-Diamant-Vorrichtung mit verbessertem Metall-Diamant-KontaktInfo
- Publication number
- DE69512850D1 DE69512850D1 DE69512850T DE69512850T DE69512850D1 DE 69512850 D1 DE69512850 D1 DE 69512850D1 DE 69512850 T DE69512850 T DE 69512850T DE 69512850 T DE69512850 T DE 69512850T DE 69512850 D1 DE69512850 D1 DE 69512850D1
- Authority
- DE
- Germany
- Prior art keywords
- diamond
- contact
- improved metal
- semiconductor
- semiconductor diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910003460 diamond Inorganic materials 0.000 title 2
- 239000010432 diamond Substances 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/043—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/0435—Schottky electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19323994A JP3309887B2 (ja) | 1994-08-17 | 1994-08-17 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69512850D1 true DE69512850D1 (de) | 1999-11-25 |
DE69512850T2 DE69512850T2 (de) | 2000-01-27 |
Family
ID=16304651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69512850T Expired - Lifetime DE69512850T2 (de) | 1994-08-17 | 1995-07-21 | Halbleiter-Diamant-Vorrichtung mit verbessertem Metall-Diamant-Kontakt |
Country Status (4)
Country | Link |
---|---|
US (1) | US5757032A (de) |
EP (1) | EP0697738B1 (de) |
JP (1) | JP3309887B2 (de) |
DE (1) | DE69512850T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6034404A (en) | 1996-12-05 | 2000-03-07 | California Institute Of Technology | Schottky-barrier semiconductor device |
TW385544B (en) * | 1998-03-02 | 2000-03-21 | Samsung Electronics Co Ltd | Apparatus for manufacturing semiconductor device, and method of manufacturing capacitor of semiconductor device thereby |
US6252245B1 (en) * | 1999-03-29 | 2001-06-26 | Howard Edan Katz | Device comprising n-channel semiconductor material |
US6849509B2 (en) * | 2002-12-09 | 2005-02-01 | Intel Corporation | Methods of forming a multilayer stack alloy for work function engineering |
JP4840798B2 (ja) * | 2005-09-30 | 2011-12-21 | 独立行政法人産業技術総合研究所 | 電極の破壊電圧を抑制するためのダイヤモンド電極構造を備えたデバイス及びその製造方法 |
JP5341774B2 (ja) | 2007-01-22 | 2013-11-13 | エレメント シックス リミテッド | ダイヤモンド表面のプラズマエッチング |
US8143654B1 (en) * | 2008-01-16 | 2012-03-27 | Triquint Semiconductor, Inc. | Monolithic microwave integrated circuit with diamond layer |
FR3004853B1 (fr) * | 2013-04-22 | 2016-10-21 | Centre Nat Rech Scient | Procede de fabrication d'une diode schottky sur un substrat en diamant |
DE102021123907A1 (de) | 2021-09-15 | 2023-03-16 | Universität Siegen, Körperschaft des öffentlichen Rechts | LED und Herstellungsverfahren dafür |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2671259B2 (ja) * | 1988-03-28 | 1997-10-29 | 住友電気工業株式会社 | ショットキー接合半導体装置 |
US5002899A (en) * | 1988-09-30 | 1991-03-26 | Massachusetts Institute Of Technology | Electrical contacts on diamond |
JPH02260470A (ja) * | 1989-03-30 | 1990-10-23 | Sumitomo Electric Ind Ltd | 発光素子 |
JP2765067B2 (ja) * | 1989-07-06 | 1998-06-11 | 住友電気工業株式会社 | P型半導体ダイヤモンドのオーミツク接続電極 |
JPH0358480A (ja) * | 1989-07-26 | 1991-03-13 | Sumitomo Electric Ind Ltd | 半導体ダイヤモンドのオーミツク接続電極 |
JPH0358481A (ja) * | 1989-07-26 | 1991-03-13 | Sumitomo Electric Ind Ltd | 半導体ダイヤモンドのオーミツク接続電極とその形成方法 |
JP2913765B2 (ja) * | 1990-05-21 | 1999-06-28 | 住友電気工業株式会社 | シヨツトキー接合の形成法 |
US5382809A (en) * | 1992-09-14 | 1995-01-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device including semiconductor diamond |
JPH06193239A (ja) | 1992-12-22 | 1994-07-12 | Matsushita Electric Works Ltd | 床 材 |
JP3086556B2 (ja) * | 1993-02-09 | 2000-09-11 | 株式会社神戸製鋼所 | 半導体ダイヤモンド層上の耐熱性オーミック電極及びその形成方法 |
-
1994
- 1994-08-17 JP JP19323994A patent/JP3309887B2/ja not_active Expired - Fee Related
-
1995
- 1995-07-21 EP EP95111530A patent/EP0697738B1/de not_active Expired - Lifetime
- 1995-07-21 DE DE69512850T patent/DE69512850T2/de not_active Expired - Lifetime
- 1995-08-02 US US08/510,220 patent/US5757032A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0697738A1 (de) | 1996-02-21 |
JPH0855819A (ja) | 1996-02-27 |
US5757032A (en) | 1998-05-26 |
EP0697738B1 (de) | 1999-10-20 |
JP3309887B2 (ja) | 2002-07-29 |
DE69512850T2 (de) | 2000-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033 |