DE69637809D1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE69637809D1
DE69637809D1 DE69637809T DE69637809T DE69637809D1 DE 69637809 D1 DE69637809 D1 DE 69637809D1 DE 69637809 T DE69637809 T DE 69637809T DE 69637809 T DE69637809 T DE 69637809T DE 69637809 D1 DE69637809 D1 DE 69637809D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637809T
Other languages
English (en)
Inventor
Sukehisa Noda
Shinji Yamada
Tooru Iwagami
Seiki Iwagaki
Hisashi Kawafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69637809D1 publication Critical patent/DE69637809D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE69637809T 1996-11-28 1996-11-28 Halbleiteranordnung Expired - Lifetime DE69637809D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/003496 WO1998024122A1 (fr) 1996-11-28 1996-11-28 Dispositif a semi-conducteur

Publications (1)

Publication Number Publication Date
DE69637809D1 true DE69637809D1 (de) 2009-02-26

Family

ID=14154168

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69637809T Expired - Lifetime DE69637809D1 (de) 1996-11-28 1996-11-28 Halbleiteranordnung

Country Status (5)

Country Link
US (1) US6002166A (de)
EP (1) EP0910121B1 (de)
JP (1) JP3338063B2 (de)
DE (1) DE69637809D1 (de)
WO (1) WO1998024122A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19805785C1 (de) * 1998-02-12 1999-06-17 Siemens Ag Leistungshalbleiter-Modul mit thermischer Laststromsicherung
JP4256502B2 (ja) * 1998-11-12 2009-04-22 新光電気工業株式会社 半導体装置用リードフレームと半導体装置
JP3813775B2 (ja) * 1999-11-05 2006-08-23 ローム株式会社 マルチチップモジュール
JP4037589B2 (ja) * 2000-03-07 2008-01-23 三菱電機株式会社 樹脂封止形電力用半導体装置
KR100442847B1 (ko) 2001-09-17 2004-08-02 페어차일드코리아반도체 주식회사 3차원 구조를 갖는 전력 반도체 모듈 및 그 제조방법
US6900527B1 (en) * 2001-09-19 2005-05-31 Amkor Technology, Inc. Lead-frame method and assembly for interconnecting circuits within a circuit module
JP2003124437A (ja) * 2001-10-19 2003-04-25 Mitsubishi Electric Corp 半導体装置
US6617679B2 (en) * 2002-02-08 2003-09-09 Advanced Energy Industries, Inc. Semiconductor package for multiple high power transistors
JP3828036B2 (ja) * 2002-03-28 2006-09-27 三菱電機株式会社 樹脂モールド型デバイスの製造方法及び製造装置
US7145223B2 (en) * 2002-05-22 2006-12-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device
DE102005038755B4 (de) * 2005-08-17 2016-03-10 Robert Bosch Gmbh Mikromechanisches Bauelement
KR101255334B1 (ko) * 2006-05-08 2013-04-16 페어차일드코리아반도체 주식회사 저 열저항 파워 모듈 및 그 제조방법
KR101194041B1 (ko) * 2006-12-07 2012-10-24 페어차일드코리아반도체 주식회사 고전력 반도체 패키지
KR101391924B1 (ko) * 2007-01-05 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지
KR101489325B1 (ko) 2007-03-12 2015-02-06 페어차일드코리아반도체 주식회사 플립-칩 방식의 적층형 파워 모듈 및 그 파워 모듈의제조방법
JP2011049442A (ja) * 2009-08-28 2011-03-10 Asahi Kasei Electronics Co Ltd 半導体装置及びその製造方法
JP5565372B2 (ja) * 2011-04-22 2014-08-06 株式会社デンソー 電子装置の製造方法
JP2013070026A (ja) 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
JP5278529B2 (ja) * 2011-12-29 2013-09-04 三菱電機株式会社 半導体モジュール
DE102012222679A1 (de) * 2012-12-10 2014-06-12 Robert Bosch Gmbh Verfahren zur Herstellung eines Schaltmoduls und eines zugehörigen Gittermoduls sowie ein zugehöriges Gittermodul und korrespondierende elektronische Baugruppe
JP6065581B2 (ja) * 2012-12-26 2017-01-25 サンケン電気株式会社 パワー半導体モジュールおよびその製造方法
JP6619356B2 (ja) * 2014-11-07 2019-12-11 三菱電機株式会社 電力用半導体装置およびその製造方法
JP2022064768A (ja) 2020-10-14 2022-04-26 富士電機株式会社 半導体装置の製造方法及び半導体装置
CN115799238A (zh) * 2022-11-17 2023-03-14 海信家电集团股份有限公司 功率模块和电子设备
CN115939119B (zh) * 2022-11-17 2023-11-03 海信家电集团股份有限公司 功率模块和电子设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122157A (en) * 1980-02-29 1981-09-25 Nec Corp Semiconductor device
JPS6063122A (ja) * 1983-09-16 1985-04-11 Michio Osada 半導体素子の樹脂封入成形方法及びその金型装置
DE3684184D1 (de) * 1985-06-20 1992-04-16 Toshiba Kawasaki Kk Verkapselte halbleiteranordnung.
JPH0680748B2 (ja) * 1986-03-31 1994-10-12 株式会社東芝 樹脂封止型半導体装置
JPS6398631A (ja) * 1986-10-16 1988-04-30 Nec Home Electronics Ltd カプセル型液晶表示装置
JPH0713984B2 (ja) * 1989-06-28 1995-02-15 シャープ株式会社 半導体装置の製造方法
JP2588283B2 (ja) * 1989-09-29 1997-03-05 株式会社東芝 樹脂封止型半導体装置
JPH03188661A (ja) * 1989-12-18 1991-08-16 Toshiba Corp 樹脂封止型半導体装置
JPH0529539A (ja) * 1991-07-17 1993-02-05 Matsushita Electric Works Ltd マルチチツプモジユール
JPH0682699B2 (ja) * 1992-04-01 1994-10-19 道男 長田 半導体素子の樹脂封止成形方法
FR2690274B1 (fr) * 1992-04-15 1997-08-22 Motorola Semiconducteurs Boitier pour dispositif a semiconducteur et procede de formation de boitier pour dispositif a semiconducteur.
JP2708320B2 (ja) * 1992-04-17 1998-02-04 三菱電機株式会社 マルチチップ型半導体装置及びその製造方法
JP2701712B2 (ja) * 1993-11-11 1998-01-21 日本電気株式会社 半導体装置
JP3325697B2 (ja) * 1994-01-20 2002-09-17 三菱電機株式会社 パワーデバイスの制御装置およびモータの駆動制御装置
JP2601228B2 (ja) * 1994-11-18 1997-04-16 サンケン電気株式会社 樹脂封止型回路装置の製造方法
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
US5767567A (en) * 1996-09-10 1998-06-16 Magemos Corporation Design of device layout for integration with power mosfet packaging to achieve better lead wire connections and lower on resistance
US5872403A (en) * 1997-01-02 1999-02-16 Lucent Technologies, Inc. Package for a power semiconductor die and power supply employing the same

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JP3338063B2 (ja) 2002-10-28
EP0910121A1 (de) 1999-04-21
EP0910121B1 (de) 2009-01-07
US6002166A (en) 1999-12-14
EP0910121A4 (de) 2000-12-06
WO1998024122A1 (fr) 1998-06-04

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