DE69322565D1 - Diamant-Halbleiteranordnung - Google Patents
Diamant-HalbleiteranordnungInfo
- Publication number
- DE69322565D1 DE69322565D1 DE69322565T DE69322565T DE69322565D1 DE 69322565 D1 DE69322565 D1 DE 69322565D1 DE 69322565 T DE69322565 T DE 69322565T DE 69322565 T DE69322565 T DE 69322565T DE 69322565 D1 DE69322565 D1 DE 69322565D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- diamond semiconductor
- diamond
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910003460 diamond Inorganic materials 0.000 title 1
- 239000010432 diamond Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/041—Making n- or p-doped regions
- H01L21/0415—Making n- or p-doped regions using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24472392 | 1992-09-14 | ||
JP21419293A JP3374866B2 (ja) | 1993-08-30 | 1993-08-30 | 半導体ダイヤモンド及びその形成方法 |
JP21628693A JP3269510B2 (ja) | 1992-09-14 | 1993-08-31 | 半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69322565D1 true DE69322565D1 (de) | 1999-01-28 |
DE69322565T2 DE69322565T2 (de) | 1999-04-29 |
Family
ID=27329589
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69322565T Expired - Lifetime DE69322565T2 (de) | 1992-09-14 | 1993-09-10 | Diamant-Halbleiteranordnung |
DE69323827T Expired - Lifetime DE69323827T2 (de) | 1992-09-14 | 1993-09-10 | Diamant-Halbleiter und Verfahren zur Herstellung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323827T Expired - Lifetime DE69323827T2 (de) | 1992-09-14 | 1993-09-10 | Diamant-Halbleiter und Verfahren zur Herstellung |
Country Status (3)
Country | Link |
---|---|
US (1) | US5382809A (de) |
EP (2) | EP0594994B1 (de) |
DE (2) | DE69322565T2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100269924B1 (ko) * | 1993-10-08 | 2000-11-01 | 하지메 히토추야나기 | 합성 다이아몬와 그 제조방법 |
CA2185217A1 (en) * | 1994-04-06 | 1995-10-19 | Rointan F. Bunshah | Process to produce diamond films |
DE69503285T2 (de) * | 1994-04-07 | 1998-11-05 | Sumitomo Electric Industries | Diamantwafer und Verfahren zur Herstellung eines Diamantwafers |
EP0878268B1 (de) | 1994-05-23 | 2002-03-27 | Sumitomo Electric Industries, Ltd. | Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren |
DE69508679T2 (de) * | 1994-06-09 | 1999-08-12 | Sumitomo Electric Industries | Wafer und Verfahren zur Herstellung eines Wafers |
JP3309887B2 (ja) * | 1994-08-17 | 2002-07-29 | 住友電気工業株式会社 | 半導体装置 |
US5686737A (en) * | 1994-09-16 | 1997-11-11 | Cree Research, Inc. | Self-aligned field-effect transistor for high frequency applications |
US5597762A (en) * | 1994-09-27 | 1997-01-28 | Nonophase Diamond Technologies, Inc. | Field-enhanced diffusion using optical activation |
KR0164149B1 (ko) * | 1995-03-28 | 1999-02-01 | 김주용 | 타이타늄 카보 나이트라이드층의 개질 방법 |
US5629246A (en) * | 1995-09-27 | 1997-05-13 | Micron Technology, Inc. | Method for forming fluorine-doped glass having low concentrations of free fluorine |
AU3041697A (en) * | 1996-06-10 | 1998-01-07 | De Beers Industrial Diamond Division (Proprietary) Limited | Method of making a contact to a diamond |
DE19730083A1 (de) * | 1997-07-14 | 1999-01-21 | Rossendorf Forschzent | Verfahren zur gezielten Herstellung von n-leitenden Bereichen in Diamantschichten mittels Ionenimplantation |
US8591856B2 (en) | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
US6858080B2 (en) | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
US6582513B1 (en) | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
US6693335B2 (en) | 1998-09-01 | 2004-02-17 | Micron Technology, Inc. | Semiconductor raised source-drain structure |
JP3323850B2 (ja) * | 1999-02-26 | 2002-09-09 | キヤノン株式会社 | 電子放出素子およびこれを用いた電子源およびこれを用いた画像形成装置 |
JP2004538230A (ja) * | 2001-08-08 | 2004-12-24 | アポロ ダイアモンド,インコーポレイティド | 合成ダイヤモンドを生成するためのシステム及び方法 |
US7402835B2 (en) * | 2002-07-18 | 2008-07-22 | Chevron U.S.A. Inc. | Heteroatom-containing diamondoid transistors |
US7049374B2 (en) * | 2002-07-18 | 2006-05-23 | Chevron U.S.A. Inc. | Heterodiamondoids |
GB0227261D0 (en) | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
US7224532B2 (en) * | 2002-12-06 | 2007-05-29 | Chevron U.S.A. Inc. | Optical uses diamondoid-containing materials |
JP2004214607A (ja) * | 2002-12-19 | 2004-07-29 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US20050019955A1 (en) * | 2003-07-23 | 2005-01-27 | Dahl Jeremy E. | Luminescent heterodiamondoids as biological labels |
US7312562B2 (en) * | 2004-02-04 | 2007-12-25 | Chevron U.S.A. Inc. | Heterodiamondoid-containing field emission devices |
DE102005013537A1 (de) * | 2004-03-24 | 2005-10-20 | Sharp Kk | Fotoelektrischer Wandler und Herstellverfahren für einen solchen |
US7394103B2 (en) * | 2004-09-13 | 2008-07-01 | Uchicago Argonne, Llc | All diamond self-aligned thin film transistor |
US8641999B2 (en) | 2005-07-11 | 2014-02-04 | SCIO Diamond Technology Corporation | Carbon grit |
US7863656B2 (en) * | 2006-05-12 | 2011-01-04 | Cree Sweden Ab | Semiconductor device |
GB201020326D0 (en) * | 2010-12-01 | 2011-01-12 | Diamond Microwave Devices Ltd | A field effect transistor |
CN110600366B (zh) * | 2019-09-20 | 2021-06-18 | 西安交通大学 | (100)晶向金刚石n沟道结型场效应晶体管及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2614868B2 (ja) * | 1987-09-09 | 1997-05-28 | 導電性無機化合物技術研究組合 | 電界効果トランジスタの製造法 |
JP2593898B2 (ja) * | 1987-11-30 | 1997-03-26 | 住友電気工業株式会社 | 半導体素子 |
JP2590161B2 (ja) * | 1987-12-15 | 1997-03-12 | 導電性無機化合物技術研究組合 | Mis型電界効果トランジスタの製造法 |
JP2813023B2 (ja) * | 1990-03-13 | 1998-10-22 | 株式会社神戸製鋼所 | Mis型ダイヤモンド電界効果トランジスタ |
JP2836790B2 (ja) * | 1991-01-08 | 1998-12-14 | 株式会社神戸製鋼所 | ダイヤモンド薄膜へのオーミック電極形成方法 |
JP3077206B2 (ja) * | 1991-01-10 | 2000-08-14 | 住友電気工業株式会社 | ダイヤモンド膜及びその製造方法 |
US5173761A (en) * | 1991-01-28 | 1992-12-22 | Kobe Steel Usa Inc., Electronic Materials Center | Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer |
JPH0815160B2 (ja) * | 1991-03-29 | 1996-02-14 | 株式会社神戸製鋼所 | ダイヤモンドショットキーゲート型電界効果トランジスタ |
JP3123127B2 (ja) * | 1991-07-22 | 2001-01-09 | 住友電気工業株式会社 | 電界効果型トランジスタ |
US5254862A (en) * | 1991-08-14 | 1993-10-19 | Kobe Steel U.S.A., Inc. | Diamond field-effect transistor with a particular boron distribution profile |
-
1993
- 1993-09-09 US US08/118,940 patent/US5382809A/en not_active Expired - Lifetime
- 1993-09-10 EP EP93114590A patent/EP0594994B1/de not_active Expired - Lifetime
- 1993-09-10 DE DE69322565T patent/DE69322565T2/de not_active Expired - Lifetime
- 1993-09-10 EP EP93114589A patent/EP0588260B1/de not_active Expired - Lifetime
- 1993-09-10 DE DE69323827T patent/DE69323827T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0594994A3 (de) | 1994-10-05 |
EP0594994A2 (de) | 1994-05-04 |
US5382809A (en) | 1995-01-17 |
EP0588260A2 (de) | 1994-03-23 |
EP0594994B1 (de) | 1999-03-10 |
DE69323827T2 (de) | 1999-07-08 |
DE69322565T2 (de) | 1999-04-29 |
DE69323827D1 (de) | 1999-04-15 |
EP0588260A3 (de) | 1994-10-19 |
EP0588260B1 (de) | 1998-12-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN |