DE69508885T2 - Halbleiterdiode und Verfahren zur Herstellung - Google Patents
Halbleiterdiode und Verfahren zur HerstellungInfo
- Publication number
- DE69508885T2 DE69508885T2 DE69508885T DE69508885T DE69508885T2 DE 69508885 T2 DE69508885 T2 DE 69508885T2 DE 69508885 T DE69508885 T DE 69508885T DE 69508885 T DE69508885 T DE 69508885T DE 69508885 T2 DE69508885 T2 DE 69508885T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor diode
- diode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6260541A JPH08125200A (ja) | 1994-10-25 | 1994-10-25 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69508885D1 DE69508885D1 (de) | 1999-05-12 |
DE69508885T2 true DE69508885T2 (de) | 1999-12-09 |
Family
ID=17349401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69508885T Expired - Lifetime DE69508885T2 (de) | 1994-10-25 | 1995-10-16 | Halbleiterdiode und Verfahren zur Herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5717244A (de) |
EP (1) | EP0709898B1 (de) |
JP (1) | JPH08125200A (de) |
KR (1) | KR0173498B1 (de) |
DE (1) | DE69508885T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19713962C1 (de) * | 1997-04-04 | 1998-07-02 | Siemens Ag | Leistungsdiode (FCI-Diode) |
WO1999009600A1 (en) * | 1997-08-14 | 1999-02-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
JP4267083B2 (ja) * | 1998-06-01 | 2009-05-27 | 三菱電機株式会社 | ダイオード |
DE19837944A1 (de) | 1998-08-21 | 2000-02-24 | Asea Brown Boveri | Verfahren zur Fertigung eines Halbleiterbauelements |
JP4080659B2 (ja) * | 2000-01-28 | 2008-04-23 | 三菱電機株式会社 | 半導体装置 |
US7485920B2 (en) * | 2000-06-14 | 2009-02-03 | International Rectifier Corporation | Process to create buried heavy metal at selected depth |
DE10048345A1 (de) | 2000-09-29 | 2002-05-16 | Eupec Gmbh & Co Kg | Körper aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge |
DE10065525B4 (de) * | 2000-12-28 | 2006-07-20 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Halbleiteranordnung mit einem PN-Übergang |
JP5359567B2 (ja) * | 2002-02-20 | 2013-12-04 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US7405465B2 (en) | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
DE102005032074B4 (de) * | 2005-07-08 | 2007-07-26 | Infineon Technologies Austria Ag | Halbleiterbauelement mit Feldstopp |
CN105552115B (zh) * | 2009-11-02 | 2019-10-29 | 富士电机株式会社 | 半导体器件以及用于制造半导体器件的方法 |
JP5776485B2 (ja) * | 2011-10-12 | 2015-09-09 | 三菱電機株式会社 | 半導体装置 |
JP5672269B2 (ja) * | 2012-06-04 | 2015-02-18 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6073092B2 (ja) * | 2012-09-07 | 2017-02-01 | 株式会社 日立パワーデバイス | ダイオード及び電力変換システム、並びにダイオードの製造方法 |
CN105814694B (zh) | 2014-10-03 | 2019-03-08 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
WO2017146148A1 (ja) | 2016-02-23 | 2017-08-31 | 富士電機株式会社 | 半導体装置 |
JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4259683A (en) * | 1977-02-07 | 1981-03-31 | General Electric Company | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer |
JPS59189679A (ja) * | 1983-04-13 | 1984-10-27 | Hitachi Ltd | ダイオ−ド |
JPH0640581B2 (ja) * | 1984-03-23 | 1994-05-25 | 株式会社東芝 | スイツチング素子 |
US4752818A (en) * | 1985-09-28 | 1988-06-21 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor device with multiple recombination center layers |
JPS63205958A (ja) * | 1987-02-21 | 1988-08-25 | Matsushita Electric Works Ltd | 静電誘導サイリスタ |
JPH0193167A (ja) * | 1987-10-05 | 1989-04-12 | Toyota Autom Loom Works Ltd | 高耐圧トランジスタ |
JPH03171777A (ja) * | 1989-11-30 | 1991-07-25 | Toshiba Corp | 半導体装置 |
JPH0650738B2 (ja) * | 1990-01-11 | 1994-06-29 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH04348527A (ja) * | 1991-05-27 | 1992-12-03 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
US5710437A (en) * | 1993-03-05 | 1998-01-20 | Nippon Steel Corporation | Radiation detecting device using superconducting tunnel junction and method of fabricating the same |
DE4310444C2 (de) * | 1993-03-31 | 1995-05-11 | Semikron Elektronik Gmbh | Schnelle Leistungsdiode |
-
1994
- 1994-10-25 JP JP6260541A patent/JPH08125200A/ja active Pending
-
1995
- 1995-09-26 US US08/533,753 patent/US5717244A/en not_active Expired - Lifetime
- 1995-10-16 DE DE69508885T patent/DE69508885T2/de not_active Expired - Lifetime
- 1995-10-16 EP EP95116283A patent/EP0709898B1/de not_active Expired - Lifetime
- 1995-10-18 KR KR1019950036064A patent/KR0173498B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH08125200A (ja) | 1996-05-17 |
KR960015948A (ko) | 1996-05-22 |
DE69508885D1 (de) | 1999-05-12 |
KR0173498B1 (ko) | 1999-02-01 |
US5717244A (en) | 1998-02-10 |
EP0709898A2 (de) | 1996-05-01 |
EP0709898B1 (de) | 1999-04-07 |
EP0709898A3 (de) | 1996-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |