DE69303643D1 - Halbleiterlaservorrichtung und Verfahren zur Herstellung - Google Patents

Halbleiterlaservorrichtung und Verfahren zur Herstellung

Info

Publication number
DE69303643D1
DE69303643D1 DE69303643T DE69303643T DE69303643D1 DE 69303643 D1 DE69303643 D1 DE 69303643D1 DE 69303643 T DE69303643 T DE 69303643T DE 69303643 T DE69303643 T DE 69303643T DE 69303643 D1 DE69303643 D1 DE 69303643D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69303643T
Other languages
English (en)
Inventor
Masayuki Iwase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE69303643D1 publication Critical patent/DE69303643D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69303643T 1992-02-10 1993-02-08 Halbleiterlaservorrichtung und Verfahren zur Herstellung Expired - Lifetime DE69303643D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04057366A JP3108183B2 (ja) 1992-02-10 1992-02-10 半導体レーザ素子とその製造方法

Publications (1)

Publication Number Publication Date
DE69303643D1 true DE69303643D1 (de) 1996-08-22

Family

ID=13053591

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69303643T Expired - Lifetime DE69303643D1 (de) 1992-02-10 1993-02-08 Halbleiterlaservorrichtung und Verfahren zur Herstellung

Country Status (5)

Country Link
US (1) US5323412A (de)
EP (1) EP0560491B1 (de)
JP (1) JP3108183B2 (de)
CA (1) CA2089056A1 (de)
DE (1) DE69303643D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3421140B2 (ja) * 1994-08-23 2003-06-30 三菱電機株式会社 半導体レーザ装置の製造方法，および半導体レーザ装置
JPH08236858A (ja) * 1995-02-24 1996-09-13 Nec Corp ｐ型基板埋め込み型半導体レーザ及びその製造方法
JP4076671B2 (ja) * 1999-04-14 2008-04-16 ローム株式会社 レーザビームプリンタ用光源装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766994B2 (ja) * 1985-02-19 1995-07-19 シャープ株式会社 半導体レーザ素子
JPS61284987A (ja) * 1985-06-10 1986-12-15 Sharp Corp 半導体レ−ザ素子
GB8516853D0 (en) * 1985-07-03 1985-08-07 British Telecomm Manufacture of semiconductor structures
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
JPS63150985A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPH0648743B2 (ja) * 1987-02-18 1994-06-22 三菱電機株式会社 半導体レ−ザ装置の製造方法
US4779282A (en) * 1987-10-05 1988-10-18 Hughes Aircraft Company Low leakage current GaInAsP/InP buried heterostructure laser and method of fabrication
US4972238A (en) * 1987-12-08 1990-11-20 Kabushiki Kaisha Toshiba Semiconductor laser device
EP0321294B1 (de) * 1987-12-18 1995-09-06 Sharp Kabushiki Kaisha Halbleiterlaservorrichtung

Also Published As

Publication number Publication date
EP0560491A1 (de) 1993-09-15
CA2089056A1 (en) 1993-08-11
US5323412A (en) 1994-06-21
JPH05226774A (ja) 1993-09-03
JP3108183B2 (ja) 2000-11-13
EP0560491B1 (de) 1996-07-17

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Legal Events

Date Code Title Description
8332 No legal effect for de