DE69500609T2 - Lichtempfangsvorrichtung - Google Patents

Lichtempfangsvorrichtung

Info

Publication number
DE69500609T2
DE69500609T2 DE69500609T DE69500609T DE69500609T2 DE 69500609 T2 DE69500609 T2 DE 69500609T2 DE 69500609 T DE69500609 T DE 69500609T DE 69500609 T DE69500609 T DE 69500609T DE 69500609 T2 DE69500609 T2 DE 69500609T2
Authority
DE
Germany
Prior art keywords
light receiving
receiving device
light
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69500609T
Other languages
English (en)
Other versions
DE69500609D1 (de
Inventor
Masaru Kubo
Naoki Fukunaga
Motohiko Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69500609D1 publication Critical patent/DE69500609D1/de
Application granted granted Critical
Publication of DE69500609T2 publication Critical patent/DE69500609T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69500609T 1994-07-14 1995-06-13 Lichtempfangsvorrichtung Expired - Fee Related DE69500609T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6162412A JP2731115B2 (ja) 1994-07-14 1994-07-14 分割型受光素子

Publications (2)

Publication Number Publication Date
DE69500609D1 DE69500609D1 (de) 1997-10-02
DE69500609T2 true DE69500609T2 (de) 1998-03-26

Family

ID=15754114

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69500609T Expired - Fee Related DE69500609T2 (de) 1994-07-14 1995-06-13 Lichtempfangsvorrichtung

Country Status (4)

Country Link
US (1) US5602415A (de)
EP (1) EP0693785B1 (de)
JP (1) JP2731115B2 (de)
DE (1) DE69500609T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1091302C (zh) * 1995-04-05 2002-09-18 松下电器产业株式会社 光检测装置及其制造方法
US5592124A (en) * 1995-06-26 1997-01-07 Burr-Brown Corporation Integrated photodiode/transimpedance amplifier
JP2828244B2 (ja) * 1995-09-26 1998-11-25 シャープ株式会社 受光素子
JP3170463B2 (ja) * 1996-09-30 2001-05-28 シャープ株式会社 回路内蔵受光素子
TW423103B (en) * 1997-01-27 2001-02-21 Sharp Kk Divided photodiode
US6034321A (en) * 1998-03-24 2000-03-07 Essential Research, Inc. Dot-junction photovoltaic cells using high-absorption semiconductors
EP1017105B1 (de) 1998-12-28 2003-04-16 Sharp Kabushiki Kaisha Lichtempfänger mit integrierter Schaltung
JP3370298B2 (ja) 1999-07-27 2003-01-27 シャープ株式会社 回路内蔵受光素子
JP3900233B2 (ja) 1999-09-06 2007-04-04 シャープ株式会社 受光素子および回路内蔵型受光素子
JP3317942B2 (ja) 1999-11-08 2002-08-26 シャープ株式会社 半導体装置およびその製造方法
JP4208172B2 (ja) * 2000-10-31 2009-01-14 シャープ株式会社 フォトダイオードおよびそれを用いた回路内蔵受光素子
JP2002151729A (ja) * 2000-11-13 2002-05-24 Sony Corp 半導体装置及びその製造方法
JP2003069004A (ja) * 2001-08-27 2003-03-07 Hamamatsu Photonics Kk 半導体光検出器及び光照射タイミング検出器
CN100394606C (zh) * 2001-12-05 2008-06-11 浜松光子学株式会社 光探测装置、成像装置和测距图像捕捉装置
JP3965049B2 (ja) * 2001-12-21 2007-08-22 浜松ホトニクス株式会社 撮像装置
JP4107855B2 (ja) * 2002-03-11 2008-06-25 シャープ株式会社 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置
JP2004165462A (ja) * 2002-11-14 2004-06-10 Sony Corp 固体撮像素子及びその製造方法
US8237832B2 (en) * 2008-05-30 2012-08-07 Omnivision Technologies, Inc. Image sensor with focusing interconnections
JP6021019B2 (ja) * 2011-06-09 2016-11-02 パナソニックＩｐマネジメント株式会社 光学素子とその製造方法
JP6008669B2 (ja) * 2012-09-19 2016-10-19 キヤノン株式会社 固体撮像素子およびその製造方法ならびにカメラ
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213918B2 (de) * 1972-02-02 1977-04-18
JPS5632777A (en) * 1979-08-27 1981-04-02 Toshiba Corp Semiconductor photodetector
JP2757985B2 (ja) * 1986-10-01 1998-05-25 ソニー株式会社 受光装置とその製造方法
JPH01214174A (ja) * 1988-02-23 1989-08-28 Victor Co Of Japan Ltd 高分解能赤外線センサー
US4996578A (en) * 1988-12-22 1991-02-26 Kabushiki Kaisha Toshiba Semiconductor device
NL8901629A (nl) * 1989-06-28 1991-01-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting en uitlees- of schrijfeenheid bevattende een dergelijke stralingsgevoelige halfgeleiderinrichting.
JP3122118B2 (ja) * 1990-07-25 2001-01-09 ソニー株式会社 半導体装置
JP2678400B2 (ja) * 1990-11-14 1997-11-17 シャープ株式会社 回路内蔵受光素子
JP2557750B2 (ja) * 1991-02-27 1996-11-27 三洋電機株式会社 光半導体装置
JP2793085B2 (ja) * 1992-06-25 1998-09-03 三洋電機株式会社 光半導体装置とその製造方法
JP2799540B2 (ja) * 1993-04-19 1998-09-17 シャープ株式会社 受光素子

Also Published As

Publication number Publication date
EP0693785B1 (de) 1997-08-27
DE69500609D1 (de) 1997-10-02
EP0693785A1 (de) 1996-01-24
JP2731115B2 (ja) 1998-03-25
JPH0832100A (ja) 1996-02-02
US5602415A (en) 1997-02-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee