JPS5632777A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS5632777A JPS5632777A JP10883679A JP10883679A JPS5632777A JP S5632777 A JPS5632777 A JP S5632777A JP 10883679 A JP10883679 A JP 10883679A JP 10883679 A JP10883679 A JP 10883679A JP S5632777 A JPS5632777 A JP S5632777A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- type layers
- diffused
- integrating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain sufficient signal isolation characteristics of the semiconductor photodetector by integrating integrally a plurality of photodetecting elements with a semiconductor substrate so as for adjacent element polarities to become reverse, thereby integrating the photodetecting elements at infinitesimal interval. CONSTITUTION:N<+> type layers 121, 123,... and P type layers 132, 134,... are diffused on the surface of an N type substrate 10, an N<-> type layer 11 is epitaxially grown thereafter, and N<+> type layers 122, 124,... and P type layers 131, 133,... are diffused on the surface of the layer 11. Photodiodes thus integrated are commonly connected, for example, at the N type side, negative voltage is applied to the P type side, and is used with the layer 11 depleted. In this manner carrier generated in the boundary region by light is accelerated by strong electric field, and is thus forcibly isolated. Even if the width between the adjacent photodiodes is accordingly small, sufficient signal isolating characteristics can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10883679A JPS5632777A (en) | 1979-08-27 | 1979-08-27 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10883679A JPS5632777A (en) | 1979-08-27 | 1979-08-27 | Semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5632777A true JPS5632777A (en) | 1981-04-02 |
Family
ID=14494782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10883679A Pending JPS5632777A (en) | 1979-08-27 | 1979-08-27 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5632777A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578837A (en) * | 1995-01-03 | 1996-11-26 | Xerox Corporation | Integrating hyperacuity sensors and arrays thereof |
| US5602415A (en) * | 1994-07-14 | 1997-02-11 | Sharp Kabushiki Kaisha | Light receiving device with isolation regions |
-
1979
- 1979-08-27 JP JP10883679A patent/JPS5632777A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5602415A (en) * | 1994-07-14 | 1997-02-11 | Sharp Kabushiki Kaisha | Light receiving device with isolation regions |
| US5578837A (en) * | 1995-01-03 | 1996-11-26 | Xerox Corporation | Integrating hyperacuity sensors and arrays thereof |
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