DE69431181D1 - Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben - Google Patents

Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben

Info

Publication number
DE69431181D1
DE69431181D1 DE69431181T DE69431181T DE69431181D1 DE 69431181 D1 DE69431181 D1 DE 69431181D1 DE 69431181 T DE69431181 T DE 69431181T DE 69431181 T DE69431181 T DE 69431181T DE 69431181 D1 DE69431181 D1 DE 69431181D1
Authority
DE
Germany
Prior art keywords
pic
making
same
integrated circuit
power integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69431181T
Other languages
English (en)
Inventor
Raffaele Zambrano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69431181D1 publication Critical patent/DE69431181D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69431181T 1994-05-19 1994-05-19 Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben Expired - Lifetime DE69431181D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830229A EP0683521B1 (de) 1994-05-19 1994-05-19 Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben

Publications (1)

Publication Number Publication Date
DE69431181D1 true DE69431181D1 (de) 2002-09-19

Family

ID=8218442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69431181T Expired - Lifetime DE69431181D1 (de) 1994-05-19 1994-05-19 Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben

Country Status (4)

Country Link
US (2) US5602416A (de)
EP (1) EP0683521B1 (de)
JP (1) JP3051045B2 (de)
DE (1) DE69431181D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0751573A1 (de) * 1995-06-30 1997-01-02 STMicroelectronics S.r.l. Integrierte Leistungsschaltung und Verfahren zur Herstellung derselben
DE69736971T2 (de) * 1996-03-06 2007-09-20 Koninklijke Philips Electronics N.V. Herstellungsverfahren einer integrierten leistungsschaltungsanordnung
EP0809293B1 (de) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Leistungshalbleiterstruktur mit einem durch den Vertikaltransistor gesteuerten Lateraltransistor
US5811350A (en) * 1996-08-22 1998-09-22 Micron Technology, Inc. Method of forming contact openings and an electronic component formed from the same and other methods
US6261948B1 (en) 1998-07-31 2001-07-17 Micron Technology, Inc. Method of forming contact openings
US6380023B2 (en) * 1998-09-02 2002-04-30 Micron Technology, Inc. Methods of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and integrated circuits
IT1309699B1 (it) * 1999-02-18 2002-01-30 St Microelectronics Srl Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching
SE518797C2 (sv) * 2000-07-19 2002-11-19 Ericsson Telefon Ab L M Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar
US6525394B1 (en) * 2000-08-03 2003-02-25 Ray E. Kuhn Substrate isolation for analog/digital IC chips
US6492710B1 (en) * 2001-06-07 2002-12-10 Cypress Semiconductor Corp. Substrate isolated transistor
DE10202274B4 (de) * 2002-01-22 2012-12-27 Infineon Technologies Ag Integrierte Halbleiterschaltungsanordnung
US20050145915A1 (en) * 2004-01-06 2005-07-07 Badredin Fatemizadeh Selective epi-region method for integration of vertical power MOSFET and lateral driver devices
JP2006013450A (ja) * 2004-05-27 2006-01-12 Renesas Technology Corp 半導体装置およびその製造方法
KR100582374B1 (ko) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 고전압 트랜지스터 및 그 제조 방법
US20060197153A1 (en) * 2005-02-23 2006-09-07 Chih-Feng Huang Vertical transistor with field region structure
CN1855538A (zh) * 2005-04-28 2006-11-01 崇贸科技股份有限公司 用于单片集成具有隔离结构的mos场效晶体管及其制作方法
GB2451121A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Triple well CMOS process
US8299532B2 (en) * 2009-08-20 2012-10-30 United Microelectronics Corp. ESD protection device structure
CN102947928B (zh) 2010-06-17 2015-04-01 富士电机株式会社 半导体器件及其制造方法
US9147690B2 (en) * 2012-03-08 2015-09-29 Ememory Technology Inc. Erasable programmable single-ploy nonvolatile memory
CN103594491B (zh) * 2012-08-14 2016-07-06 北大方正集团有限公司 一种cdmos制作方法
US9383512B2 (en) * 2012-12-31 2016-07-05 Infinera Corporation Light absorption and scattering devices in a photonic integrated circuit that minimize optical feedback and noise
TWI521683B (zh) * 2013-05-13 2016-02-11 力旺電子股份有限公司 具可程式可抹除的單一多晶矽層非揮發性記憶體
CN104425489B (zh) * 2013-08-20 2017-03-01 上海华虹宏力半导体制造有限公司 高压器件和低压器件集成结构和集成方法
JP6230455B2 (ja) * 2014-03-19 2017-11-15 株式会社東芝 半導体装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34025A (en) * 1861-12-24 de brame
US4001860A (en) * 1973-11-12 1977-01-04 Signetics Corporation Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
JPS58165374A (ja) * 1982-03-26 1983-09-30 Hitachi Ltd 複合トランジスタ
JPS612355A (ja) * 1984-06-15 1986-01-08 Hitachi Ltd 複合半導体素子
JPH073854B2 (ja) * 1985-12-18 1995-01-18 株式会社日立製作所 複合半導体装置
IT1188465B (it) * 1986-03-27 1988-01-14 Sgs Microelettronica Spa Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione
JPH0685441B2 (ja) * 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
JP2515745B2 (ja) * 1986-07-14 1996-07-10 株式会社日立製作所 半導体装置の製造方法
JPS63150957A (ja) * 1986-12-15 1988-06-23 Nissan Motor Co Ltd 半導体装置
USRE34025E (en) * 1987-02-13 1992-08-11 Kabushiki Kaisha Toshiba Semiconductor device with isolation between MOSFET and control circuit
JPS6445159A (en) * 1987-08-13 1989-02-17 Nissan Motor Semiconductor device
JPH01189155A (ja) * 1988-01-25 1989-07-28 Sharp Corp 半導体装置
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
JPH02143454A (ja) * 1988-11-25 1990-06-01 Hitachi Ltd 半導体デバイス
IT1234252B (it) * 1989-06-16 1992-05-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione
US5246871A (en) * 1989-06-16 1993-09-21 Sgs-Thomson Microelectronics S.R.L. Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
JPH056960A (ja) * 1991-06-27 1993-01-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3226053B2 (ja) * 1992-06-03 2001-11-05 富士電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP3051045B2 (ja) 2000-06-12
US5602416A (en) 1997-02-11
US5591662A (en) 1997-01-07
EP0683521A1 (de) 1995-11-22
JPH07321214A (ja) 1995-12-08
EP0683521B1 (de) 2002-08-14

Similar Documents

Publication Publication Date Title
DE69431181D1 (de) Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben
DE69316810T2 (de) SiGe-SOI-MOSFET und Verfahren zur Herstellung
DE69535278D1 (de) Batterie und Verfahren zur Herstellung dieser Batterie
DE69515189T2 (de) SOI-Substrat und Verfahren zur Herstellung
DE69529966T2 (de) Tintenzusammensetzung und Verfahren zur Herstellung derselben
DE69528111T2 (de) Biosensor und Verfahren zur Herstellung desselben
DE59401845D1 (de) Rotor und Verfahren zur Herstellung desselben
DE19781160T1 (de) Elektrooptische hybride Verdrahtungsplatine und Verfahren zur Herstellung derselben
DE69415059T2 (de) Verbesserungen zur Herstellung integrierter Schaltungen
DE69326373D1 (de) Elektrokatalysator und Verfahren zur Herstellung
DE69516772D1 (de) Verbundene Gegenstände und Verfahren zur Herstellung derselben
DE69431023T2 (de) Halbleiteraufbau und Verfahren zur Herstellung
DE59502030D1 (de) Schlaucheinheit und Verfahren zur Herstellung derselben
DE69434268D1 (de) VDMOS-Leistungsbauteil und Verfahren zur Herstellung desselben
DE69525273T2 (de) Verfahren zur Herstellung einer integrierten Schaltung
DE69525296T2 (de) Etikettenband und Verfahren zur Herstellung desselben
DE69506776D1 (de) Vakuumschalter und Verfahren zur Herstellung desselben
DE19580280T1 (de) Schleifmaterialbogen und Verfahren zur Herstellung desselben
DE69432407D1 (de) Integrierte Leistungsschaltung ("PIC") mit vertikalem IGB und Verfahren zur Herstellung derselben
DE69808157D1 (de) Strahlungsbildwandler und Verfahren zur Herstellung desselben
DE69507874D1 (de) Bildschirm und Verfahren zur Herstellung desselben
DE69404348D1 (de) Kathodenvorrichtung und Verfahren zur Herstellung derselben
DE69510170D1 (de) Bildschirm und Verfahren zur Herstellung desselben
DE69128406T2 (de) Lateraler MOSFET und Verfahren zur Herstellung
DE69528683T2 (de) Halbleiterbauteil und Verfahren zur Herstellung desselben

Legal Events

Date Code Title Description
8332 No legal effect for de