IT1309699B1 - Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching - Google Patents

Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching

Info

Publication number
IT1309699B1
IT1309699B1 IT1999MI000331A ITMI990331A IT1309699B1 IT 1309699 B1 IT1309699 B1 IT 1309699B1 IT 1999MI000331 A IT1999MI000331 A IT 1999MI000331A IT MI990331 A ITMI990331 A IT MI990331A IT 1309699 B1 IT1309699 B1 IT 1309699B1
Authority
IT
Italy
Prior art keywords
transistor
switching configuration
integrated mosfet
emitter switching
bipolar transistor
Prior art date
Application number
IT1999MI000331A
Other languages
English (en)
Inventor
Davide Patti
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999MI000331A priority Critical patent/IT1309699B1/it
Priority to US09/505,461 priority patent/US6441446B1/en
Publication of ITMI990331A1 publication Critical patent/ITMI990331A1/it
Application granted granted Critical
Publication of IT1309699B1 publication Critical patent/IT1309699B1/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/7302Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT1999MI000331A 1999-02-18 1999-02-18 Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching IT1309699B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999MI000331A IT1309699B1 (it) 1999-02-18 1999-02-18 Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching
US09/505,461 US6441446B1 (en) 1999-02-18 2000-02-18 Device with integrated bipolar and MOSFET transistors in an emitter switching configuration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI000331A IT1309699B1 (it) 1999-02-18 1999-02-18 Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching

Publications (2)

Publication Number Publication Date
ITMI990331A1 ITMI990331A1 (it) 2000-08-18
IT1309699B1 true IT1309699B1 (it) 2002-01-30

Family

ID=11381951

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI000331A IT1309699B1 (it) 1999-02-18 1999-02-18 Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching

Country Status (2)

Country Link
US (1) US6441446B1 (it)
IT (1) IT1309699B1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6927460B1 (en) * 2002-02-15 2005-08-09 Fairchild Semiconductor Corporation Method and structure for BiCMOS isolated NMOS transistor
EP1443649B1 (en) * 2003-01-31 2008-08-13 STMicroelectronics S.r.l. Emitter switching configuration and corresponding integrated structure
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
DE102007024355B4 (de) * 2007-05-24 2011-04-21 Infineon Technologies Ag Verfahren zum Herstellen einer Schutzstruktur
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69320033T2 (de) * 1993-06-10 1998-12-03 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors
EP0683521B1 (en) * 1994-05-19 2002-08-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power integrated circuit ("PIC") structure, and manufacturing process thereof
EP0837507B1 (en) * 1996-10-18 2004-08-18 STMicroelectronics S.r.l. A bipolar power transistor with buried base and interdigitated geometry
EP0878848A1 (en) * 1997-05-16 1998-11-18 STMicroelectronics S.r.l. Vertical bipolar semiconductor power transistor with an interdigitised geometry, with optimisation of the base-to-emitter potential difference

Also Published As

Publication number Publication date
ITMI990331A1 (it) 2000-08-18
US6441446B1 (en) 2002-08-27

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