IT1309699B1 - Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching - Google Patents
Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switchingInfo
- Publication number
- IT1309699B1 IT1309699B1 IT1999MI000331A ITMI990331A IT1309699B1 IT 1309699 B1 IT1309699 B1 IT 1309699B1 IT 1999MI000331 A IT1999MI000331 A IT 1999MI000331A IT MI990331 A ITMI990331 A IT MI990331A IT 1309699 B1 IT1309699 B1 IT 1309699B1
- Authority
- IT
- Italy
- Prior art keywords
- transistor
- switching configuration
- integrated mosfet
- emitter switching
- bipolar transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999MI000331A IT1309699B1 (it) | 1999-02-18 | 1999-02-18 | Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching |
US09/505,461 US6441446B1 (en) | 1999-02-18 | 2000-02-18 | Device with integrated bipolar and MOSFET transistors in an emitter switching configuration |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999MI000331A IT1309699B1 (it) | 1999-02-18 | 1999-02-18 | Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI990331A1 ITMI990331A1 (it) | 2000-08-18 |
IT1309699B1 true IT1309699B1 (it) | 2002-01-30 |
Family
ID=11381951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1999MI000331A IT1309699B1 (it) | 1999-02-18 | 1999-02-18 | Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching |
Country Status (2)
Country | Link |
---|---|
US (1) | US6441446B1 (it) |
IT (1) | IT1309699B1 (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6927460B1 (en) * | 2002-02-15 | 2005-08-09 | Fairchild Semiconductor Corporation | Method and structure for BiCMOS isolated NMOS transistor |
EP1443649B1 (en) * | 2003-01-31 | 2008-08-13 | STMicroelectronics S.r.l. | Emitter switching configuration and corresponding integrated structure |
US7772060B2 (en) * | 2006-06-21 | 2010-08-10 | Texas Instruments Deutschland Gmbh | Integrated SiGe NMOS and PMOS transistors |
DE102007024355B4 (de) * | 2007-05-24 | 2011-04-21 | Infineon Technologies Ag | Verfahren zum Herstellen einer Schutzstruktur |
US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69320033T2 (de) * | 1993-06-10 | 1998-12-03 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors |
EP0683521B1 (en) * | 1994-05-19 | 2002-08-14 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Power integrated circuit ("PIC") structure, and manufacturing process thereof |
EP0837507B1 (en) * | 1996-10-18 | 2004-08-18 | STMicroelectronics S.r.l. | A bipolar power transistor with buried base and interdigitated geometry |
EP0878848A1 (en) * | 1997-05-16 | 1998-11-18 | STMicroelectronics S.r.l. | Vertical bipolar semiconductor power transistor with an interdigitised geometry, with optimisation of the base-to-emitter potential difference |
-
1999
- 1999-02-18 IT IT1999MI000331A patent/IT1309699B1/it active
-
2000
- 2000-02-18 US US09/505,461 patent/US6441446B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ITMI990331A1 (it) | 2000-08-18 |
US6441446B1 (en) | 2002-08-27 |
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