DE69434268D1 - VDMOS-Leistungsbauteil und Verfahren zur Herstellung desselben - Google Patents

VDMOS-Leistungsbauteil und Verfahren zur Herstellung desselben

Info

Publication number
DE69434268D1
DE69434268D1 DE69434268T DE69434268T DE69434268D1 DE 69434268 D1 DE69434268 D1 DE 69434268D1 DE 69434268 T DE69434268 T DE 69434268T DE 69434268 T DE69434268 T DE 69434268T DE 69434268 D1 DE69434268 D1 DE 69434268D1
Authority
DE
Germany
Prior art keywords
making
same
power device
vdmos power
vdmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69434268T
Other languages
English (en)
Other versions
DE69434268T2 (de
Inventor
Giuseppe Ferla
Ferruccio Frisina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical STMicroelectronics SRL
Publication of DE69434268D1 publication Critical patent/DE69434268D1/de
Application granted granted Critical
Publication of DE69434268T2 publication Critical patent/DE69434268T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
DE69434268T 1994-07-14 1994-07-14 Intergrierte Struktur einer Hochgeschwindigkeits-MOS-Technologe-Leistungsvorrichtung und zugehöriges Herstellungsverfahren Expired - Lifetime DE69434268T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830355A EP0693773B1 (de) 1994-07-14 1994-07-14 VDMOS-Leistungsbauteil und Verfahren zur Herstellung desselben

Publications (2)

Publication Number Publication Date
DE69434268D1 true DE69434268D1 (de) 2005-03-17
DE69434268T2 DE69434268T2 (de) 2006-01-12

Family

ID=8218492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69434268T Expired - Lifetime DE69434268T2 (de) 1994-07-14 1994-07-14 Intergrierte Struktur einer Hochgeschwindigkeits-MOS-Technologe-Leistungsvorrichtung und zugehöriges Herstellungsverfahren

Country Status (4)

Country Link
US (2) US5883412A (de)
EP (2) EP1408542A3 (de)
JP (1) JP2987086B2 (de)
DE (1) DE69434268T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0817274B1 (de) * 1996-07-05 2004-02-11 STMicroelectronics S.r.l. Asymmetrische MOS-Technologie-Leistungsanordnung
US6025231A (en) * 1997-02-18 2000-02-15 Texas Instruments Incorporated Self aligned DMOS transistor and method of fabrication
JPH1154746A (ja) 1997-07-31 1999-02-26 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
US6087697A (en) 1997-10-31 2000-07-11 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
JP2001111040A (ja) * 1999-10-13 2001-04-20 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
ITMI20012284A1 (it) * 2001-10-30 2003-04-30 St Microelectronics Srl Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package
US20030116552A1 (en) * 2001-12-20 2003-06-26 Stmicroelectronics Inc. Heating element for microfluidic and micromechanical applications
JP4800602B2 (ja) * 2004-09-09 2011-10-26 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
US7875936B2 (en) 2004-11-19 2011-01-25 Stmicroelectronics, S.R.L. Power MOS electronic device and corresponding realizing method
ITMI20042243A1 (it) * 2004-11-19 2005-02-19 St Microelectronics Srl Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione
KR100629605B1 (ko) * 2004-12-31 2006-09-27 동부일렉트로닉스 주식회사 엘디모스 채널 형성 방법
US7736984B2 (en) * 2005-09-23 2010-06-15 Semiconductor Components Industries, Llc Method of forming a low resistance semiconductor contact and structure therefor
JP5082133B2 (ja) * 2006-03-22 2012-11-28 セイコーＮｐｃ株式会社 半導体装置の製造方法
US20110062489A1 (en) * 2009-09-11 2011-03-17 Disney Donald R Power device with self-aligned silicide contact
CN101944528B (zh) * 2010-06-29 2013-05-01 王立模 Mos栅基极开关四极管
CN103681842A (zh) * 2012-09-14 2014-03-26 北大方正集团有限公司 一种vdmos管以及vdmos管的制造方法
CN102903746B (zh) 2012-11-07 2015-06-03 东南大学 一种大电流密度的横向超薄绝缘栅双极型晶体管
US10622368B2 (en) 2015-06-24 2020-04-14 Sandisk Technologies Llc Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof
DE102017110536B4 (de) * 2017-05-15 2022-06-30 Infineon Technologies Ag Halbleitervorrichtung mit breiter Bandlücke, die Gatefinger zwischen Bondpads enthält, und Halbleitermodul
JP6858091B2 (ja) * 2017-07-18 2021-04-14 株式会社 日立パワーデバイス 半導体装置およびその製造方法
US10256247B1 (en) 2018-02-08 2019-04-09 Sandisk Technologies Llc Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE39611B1 (en) * 1973-08-14 1978-11-22 Siemens Ag Improvements in or relating to two-phase charge coupled devices
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4417385A (en) * 1982-08-09 1983-11-29 General Electric Company Processes for manufacturing insulated-gate semiconductor devices with integral shorts
IT1213234B (it) * 1984-10-25 1989-12-14 Sgs Thomson Microelectronics Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.
US4816882A (en) * 1986-03-10 1989-03-28 Siliconix Incorporated Power MOS transistor with equipotential ring
US4920388A (en) * 1987-02-17 1990-04-24 Siliconix Incorporated Power transistor with integrated gate resistor
US5173435A (en) * 1987-11-11 1992-12-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
US4916509A (en) * 1987-11-13 1990-04-10 Siliconix Incorporated Method for obtaining low interconnect resistance on a grooved surface and the resulting structure
EP0332822A1 (de) * 1988-02-22 1989-09-20 Asea Brown Boveri Ag Feldeffektgesteuertes, bipolares Leistungshalbleiter-Bauelement sowie Verfahren zu seiner Herstellung
JPH0648729B2 (ja) * 1988-02-24 1994-06-22 シーメンス、アクチエンゲゼルシシヤフト 電界効果制御可能のバイポーラ・トランジスタ
US5248891A (en) * 1988-03-25 1993-09-28 Hiroshi Takato High integration semiconductor device
JP2675572B2 (ja) * 1988-03-31 1997-11-12 株式会社東芝 半導体集積回路の製造方法
US4998151A (en) * 1989-04-13 1991-03-05 General Electric Company Power field effect devices having small cell size and low contact resistance
JP2925161B2 (ja) * 1989-04-24 1999-07-28 新電元工業株式会社 絶縁ゲート型電界効果トランジスタ
US4985740A (en) * 1989-06-01 1991-01-15 General Electric Company Power field effect devices having low gate sheet resistance and low ohmic contact resistance
US5234851A (en) * 1989-09-05 1993-08-10 General Electric Company Small cell, low contact assistance rugged power field effect devices and method of fabrication
US5119153A (en) * 1989-09-05 1992-06-02 General Electric Company Small cell low contact resistance rugged power field effect devices and method of fabrication
IT1236994B (it) * 1989-12-29 1993-05-12 Sgs Thomson Microelectronics Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti
US5326824A (en) * 1990-05-18 1994-07-05 Mitsui Toatsu Chemicals, Incorporated Syndiotactic propylene copolymer, method for preparing same, and its use
US5223445A (en) * 1990-05-30 1993-06-29 Matsushita Electric Industrial Co., Ltd. Large angle ion implantation method
JPH0465132A (ja) * 1990-07-05 1992-03-02 Oki Electric Ind Co Ltd 二重拡散型ｍｏｓ　ｆｅｔの製造方法
US5047833A (en) * 1990-10-17 1991-09-10 International Rectifier Corporation Solderable front metal contact for MOS devices
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
JP3104271B2 (ja) * 1991-03-27 2000-10-30 松下電器産業株式会社 イオン注入を用いた半導体装置の製造方法
US5183769A (en) * 1991-05-06 1993-02-02 Motorola, Inc. Vertical current flow semiconductor device utilizing wafer bonding
JP3216206B2 (ja) * 1992-03-30 2001-10-09 株式会社デンソー 半導体装置及びその製造方法
JP2984478B2 (ja) * 1992-08-15 1999-11-29 株式会社東芝 伝導度変調型半導体装置及びその製造方法
US5240874A (en) * 1992-10-20 1993-08-31 Micron Semiconductor, Inc. Semiconductor wafer processing method of forming channel stops and method of forming SRAM circuitry
US5486715A (en) * 1993-10-15 1996-01-23 Ixys Corporation High frequency MOS device
DE69429915D1 (de) * 1994-07-04 2002-03-28 St Microelectronics Srl Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie

Also Published As

Publication number Publication date
EP1408542A3 (de) 2009-01-21
DE69434268T2 (de) 2006-01-12
EP0693773B1 (de) 2005-02-09
US5933734A (en) 1999-08-03
EP0693773A1 (de) 1996-01-24
US5883412A (en) 1999-03-16
JP2987086B2 (ja) 1999-12-06
EP1408542A2 (de) 2004-04-14
JPH0846200A (ja) 1996-02-16

Similar Documents

Publication Publication Date Title
DE69316810D1 (de) SiGe-SOI-MOSFET und Verfahren zur Herstellung
DE69434268D1 (de) VDMOS-Leistungsbauteil und Verfahren zur Herstellung desselben
DE69528111T2 (de) Biosensor und Verfahren zur Herstellung desselben
DE69739763D1 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69728349D1 (de) Wasserabsorbierendes Mittel und Verfahren zur Herstellung davon
DE69527054T2 (de) Retroreflektierender gegenstand und verfahren zur herstellung
DE69530232D1 (de) Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung derselben
DE69515193T2 (de) Verfahren und Gerät zur Farbkonversion
DE59401845D1 (de) Rotor und Verfahren zur Herstellung desselben
DE59502030D1 (de) Schlaucheinheit und Verfahren zur Herstellung derselben
DE69431181D1 (de) Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben
DE69617772T2 (de) Thermistor-Vorrichtung und Verfahren zur Herstellung
DE69738152D1 (de) Photovoltaisches Bauelement und Verfahren zur Herstellung desselben
DE69525296T2 (de) Etikettenband und Verfahren zur Herstellung desselben
DE19580280T1 (de) Schleifmaterialbogen und Verfahren zur Herstellung desselben
DE69506776D1 (de) Vakuumschalter und Verfahren zur Herstellung desselben
DE69808157T2 (de) Strahlungsbildwandler und Verfahren zur Herstellung desselben
DE69637746D1 (de) Transistor und verfahren zur herstellung
DE69427913D1 (de) Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung
DE69507874T2 (de) Bildschirm und Verfahren zur Herstellung desselben
DE69404348D1 (de) Kathodenvorrichtung und Verfahren zur Herstellung derselben
DE69732520D1 (de) Ladungsgekoppelte anordnung und verfahren zur herstellung
DE69510170D1 (de) Bildschirm und Verfahren zur Herstellung desselben
DE69128406T2 (de) Lateraler MOSFET und Verfahren zur Herstellung
DE69528683T2 (de) Halbleiterbauteil und Verfahren zur Herstellung desselben

Legal Events

Date Code Title Description
8364 No opposition during term of opposition