DE69108876D1 - Modul zum Spülen einer Prozesskammer für eine Anlage zur Behandlung von Halbleitern. - Google Patents

Modul zum Spülen einer Prozesskammer für eine Anlage zur Behandlung von Halbleitern.

Info

Publication number
DE69108876D1
DE69108876D1 DE69108876T DE69108876T DE69108876D1 DE 69108876 D1 DE69108876 D1 DE 69108876D1 DE 69108876 T DE69108876 T DE 69108876T DE 69108876 T DE69108876 T DE 69108876T DE 69108876 D1 DE69108876 D1 DE 69108876D1
Authority
DE
Germany
Prior art keywords
flushing
module
process chamber
treating semiconductors
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69108876T
Other languages
English (en)
Other versions
DE69108876T2 (de
Inventor
Mehrdad M Moslehi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69108876D1 publication Critical patent/DE69108876D1/de
Publication of DE69108876T2 publication Critical patent/DE69108876T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE69108876T 1990-12-27 1991-12-27 Modul zum Spülen einer Prozesskammer für eine Anlage zur Behandlung von Halbleitern. Expired - Fee Related DE69108876T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/634,676 US5275976A (en) 1990-12-27 1990-12-27 Process chamber purge module for semiconductor processing equipment

Publications (2)

Publication Number Publication Date
DE69108876D1 true DE69108876D1 (de) 1995-05-18
DE69108876T2 DE69108876T2 (de) 1995-11-16

Family

ID=24544774

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69108876T Expired - Fee Related DE69108876T2 (de) 1990-12-27 1991-12-27 Modul zum Spülen einer Prozesskammer für eine Anlage zur Behandlung von Halbleitern.

Country Status (4)

Country Link
US (2) US5275976A (de)
EP (1) EP0492632B1 (de)
JP (1) JP3310317B2 (de)
DE (1) DE69108876T2 (de)

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US6375741B2 (en) * 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
JPH0799162A (ja) * 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
JP2773674B2 (ja) * 1995-03-31 1998-07-09 日本電気株式会社 半導体装置の製造装置及び半導体装置の製造方法
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
US5781693A (en) * 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US6077157A (en) * 1996-11-18 2000-06-20 Applied Materials, Inc. Process chamber exhaust system
US6153260A (en) 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6003526A (en) * 1997-09-12 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd In-sit chamber cleaning method
US5914050A (en) * 1997-09-22 1999-06-22 Applied Materials, Inc. Purged lower liner
US5961724A (en) * 1998-03-30 1999-10-05 Lam Research Corporation Techniques for reducing particulate contamination on a substrate during processing
US6322678B1 (en) 1998-07-11 2001-11-27 Semitool, Inc. Electroplating reactor including back-side electrical contact apparatus
US6277235B1 (en) * 1998-08-11 2001-08-21 Novellus Systems, Inc. In situ plasma clean gas injection
US6528364B1 (en) * 1998-08-24 2003-03-04 Micron Technology, Inc. Methods to form electronic devices and methods to form a material over a semiconductive substrate
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange
US6246029B1 (en) * 1999-02-19 2001-06-12 Seh America, Inc. High temperature semiconductor crystal growing furnace component cleaning method
KR100328820B1 (ko) * 1999-02-25 2002-03-14 박종섭 화학기상증착 장비의 가스분사장치
AU2001283944A1 (en) * 2000-09-22 2002-04-02 Aixtron Ag Gas inlet mechanism for cvd-method and device
KR100375102B1 (ko) * 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US7378127B2 (en) 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
US6697079B2 (en) * 2001-03-15 2004-02-24 Apple Computer, Inc. Color palette providing cross-platform consistency
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US7468104B2 (en) 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US7091453B2 (en) * 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
CN101914760B (zh) * 2003-09-19 2012-08-29 株式会社日立国际电气 半导体装置的制造方法及衬底处理装置
JP4225998B2 (ja) * 2004-12-09 2009-02-18 東京エレクトロン株式会社 成膜方法及び成膜装置並びに記憶媒体
US7615061B2 (en) 2006-02-28 2009-11-10 Arthrocare Corporation Bone anchor suture-loading system, method and apparatus
US7554103B2 (en) * 2006-06-26 2009-06-30 Applied Materials, Inc. Increased tool utilization/reduction in MWBC for UV curing chamber
JP5109376B2 (ja) * 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
US9850576B2 (en) * 2010-02-15 2017-12-26 Applied Materials, Inc. Anti-arc zero field plate
US9662688B2 (en) 2012-07-09 2017-05-30 Kla-Tencor Corporation Apparatus and method for cross-flow purge for optical components in a chamber
US9145303B2 (en) * 2013-02-15 2015-09-29 Ecolive Technologies LTD. Chemical vapor deposition reactor having ceramic lining for production of polysilicon
US9460915B2 (en) * 2014-09-12 2016-10-04 Lam Research Corporation Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges
JP2019079867A (ja) * 2017-10-20 2019-05-23 漢民科技股▲分▼有限公司 気相成膜装置
WO2020219408A1 (en) * 2019-04-26 2020-10-29 Lam Research Corporation High temperature heating of a substrate in a processing chamber

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222922A (ja) * 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
US4736705A (en) * 1986-07-14 1988-04-12 The United States Of America As Represented By The Secretary Of The Air Force Apparatus for metal organic chemical vapor deposition
US4924807A (en) * 1986-07-26 1990-05-15 Nihon Shinku Gijutsu Kabushiki Kaisha Apparatus for chemical vapor deposition
US4820377A (en) * 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4792378A (en) * 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor

Also Published As

Publication number Publication date
US5405444A (en) 1995-04-11
EP0492632A1 (de) 1992-07-01
JP3310317B2 (ja) 2002-08-05
DE69108876T2 (de) 1995-11-16
US5275976A (en) 1994-01-04
EP0492632B1 (de) 1995-04-12
JPH04294526A (ja) 1992-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee