DE69004842D1 - Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung. - Google Patents
Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung.Info
- Publication number
- DE69004842D1 DE69004842D1 DE90200679T DE69004842T DE69004842D1 DE 69004842 D1 DE69004842 D1 DE 69004842D1 DE 90200679 T DE90200679 T DE 90200679T DE 69004842 T DE69004842 T DE 69004842T DE 69004842 D1 DE69004842 D1 DE 69004842D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor arrangement
- radiation
- producing
- emitting semiconductor
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8900748A NL8900748A (nl) | 1989-03-28 | 1989-03-28 | Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69004842D1 true DE69004842D1 (de) | 1994-01-13 |
DE69004842T2 DE69004842T2 (de) | 1994-06-01 |
Family
ID=19854361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69004842T Expired - Fee Related DE69004842T2 (de) | 1989-03-28 | 1990-03-22 | Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5381024A (de) |
EP (1) | EP0390262B1 (de) |
JP (1) | JP3093234B2 (de) |
KR (1) | KR900015361A (de) |
DE (1) | DE69004842T2 (de) |
NL (1) | NL8900748A (de) |
Families Citing this family (56)
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US5381026A (en) * | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
DE69312799T2 (de) * | 1992-05-18 | 1998-02-12 | Philips Electronics Nv | Optoelektronische Halbleiteranordnung |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
JPH07162089A (ja) * | 1993-12-13 | 1995-06-23 | Mitsubishi Electric Corp | 可視光レーザダイオード及びその製造方法 |
DE59510543D1 (de) * | 1994-11-17 | 2003-03-06 | Infineon Technologies Ag | Verfahren zur Befestigung eines ersten Substrates auf einem zweiten Substrat und Verwendung des Verfahrens zur Herstellung einer dreidimensionalen Schaltungsanordnung |
JPH10501923A (ja) * | 1995-04-19 | 1998-02-17 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体ダイオードレーザのような光電半導体装置を製造する方法 |
WO1997050133A1 (en) * | 1996-06-24 | 1997-12-31 | Philips Electronics N.V. | Radiation-emitting semiconductor diode, and method of manufacturing such a diode |
US5889805A (en) * | 1996-11-01 | 1999-03-30 | Coherent, Inc. | Low-threshold high-efficiency laser diodes with aluminum-free active region |
KR100239473B1 (ko) * | 1997-08-20 | 2000-02-01 | 구자홍 | 레이저 다이오드 및 그 제조방법 |
JPH11135834A (ja) | 1997-10-27 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 発光ダイオード装置及びその製造方法 |
JP2001015851A (ja) * | 1999-07-01 | 2001-01-19 | Sony Corp | 半導体レーザ素子及びその作製方法 |
US7049761B2 (en) | 2000-02-11 | 2006-05-23 | Altair Engineering, Inc. | Light tube and power supply circuit |
JP2001291895A (ja) * | 2000-04-06 | 2001-10-19 | Sharp Corp | 半導体発光素子 |
JP4599687B2 (ja) * | 2000-08-08 | 2010-12-15 | ソニー株式会社 | レーザダイオード、半導体発光装置および製造方法 |
JP2002204032A (ja) * | 2000-10-31 | 2002-07-19 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP4885434B2 (ja) * | 2003-11-27 | 2012-02-29 | シャープ株式会社 | 半導体レーザ素子、光ディスク装置および光伝送システム |
JP2009188435A (ja) * | 2003-11-11 | 2009-08-20 | Sharp Corp | 半導体レーザ素子およびその製造方法および光ディスク装置および光伝送システム |
JP2005175450A (ja) * | 2003-11-21 | 2005-06-30 | Sharp Corp | 化合物半導体装置およびその製造方法、ならびにその化合物半導体装置を備えた光ディスク装置 |
JP4884698B2 (ja) * | 2005-04-27 | 2012-02-29 | シャープ株式会社 | 半導体装置の製造方法、半導体レーザ装置、光伝送モジュールおよび光ディスク装置 |
JP2007049088A (ja) * | 2005-08-12 | 2007-02-22 | Rohm Co Ltd | 高出力赤色半導体レーザ |
US8118447B2 (en) | 2007-12-20 | 2012-02-21 | Altair Engineering, Inc. | LED lighting apparatus with swivel connection |
US7712918B2 (en) | 2007-12-21 | 2010-05-11 | Altair Engineering , Inc. | Light distribution using a light emitting diode assembly |
US8360599B2 (en) | 2008-05-23 | 2013-01-29 | Ilumisys, Inc. | Electric shock resistant L.E.D. based light |
US7976196B2 (en) | 2008-07-09 | 2011-07-12 | Altair Engineering, Inc. | Method of forming LED-based light and resulting LED-based light |
US7946729B2 (en) | 2008-07-31 | 2011-05-24 | Altair Engineering, Inc. | Fluorescent tube replacement having longitudinally oriented LEDs |
US8674626B2 (en) | 2008-09-02 | 2014-03-18 | Ilumisys, Inc. | LED lamp failure alerting system |
US8256924B2 (en) | 2008-09-15 | 2012-09-04 | Ilumisys, Inc. | LED-based light having rapidly oscillating LEDs |
US8653984B2 (en) | 2008-10-24 | 2014-02-18 | Ilumisys, Inc. | Integration of LED lighting control with emergency notification systems |
US8214084B2 (en) | 2008-10-24 | 2012-07-03 | Ilumisys, Inc. | Integration of LED lighting with building controls |
US8324817B2 (en) | 2008-10-24 | 2012-12-04 | Ilumisys, Inc. | Light and light sensor |
US8444292B2 (en) | 2008-10-24 | 2013-05-21 | Ilumisys, Inc. | End cap substitute for LED-based tube replacement light |
US8901823B2 (en) | 2008-10-24 | 2014-12-02 | Ilumisys, Inc. | Light and light sensor |
US7938562B2 (en) | 2008-10-24 | 2011-05-10 | Altair Engineering, Inc. | Lighting including integral communication apparatus |
US8556452B2 (en) | 2009-01-15 | 2013-10-15 | Ilumisys, Inc. | LED lens |
US8362710B2 (en) | 2009-01-21 | 2013-01-29 | Ilumisys, Inc. | Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays |
US8664880B2 (en) | 2009-01-21 | 2014-03-04 | Ilumisys, Inc. | Ballast/line detection circuit for fluorescent replacement lamps |
US8330381B2 (en) | 2009-05-14 | 2012-12-11 | Ilumisys, Inc. | Electronic circuit for DC conversion of fluorescent lighting ballast |
US8299695B2 (en) | 2009-06-02 | 2012-10-30 | Ilumisys, Inc. | Screw-in LED bulb comprising a base having outwardly projecting nodes |
WO2011005579A2 (en) | 2009-06-23 | 2011-01-13 | Altair Engineering, Inc. | Illumination device including leds and a switching power control system |
US8541958B2 (en) | 2010-03-26 | 2013-09-24 | Ilumisys, Inc. | LED light with thermoelectric generator |
CA2794512A1 (en) | 2010-03-26 | 2011-09-29 | David L. Simon | Led light tube with dual sided light distribution |
EP2553332B1 (de) | 2010-03-26 | 2016-03-23 | iLumisys, Inc. | Umgestülpte led-glühlampe |
US8454193B2 (en) | 2010-07-08 | 2013-06-04 | Ilumisys, Inc. | Independent modules for LED fluorescent light tube replacement |
CA2803267A1 (en) | 2010-07-12 | 2012-01-19 | Ilumisys, Inc. | Circuit board mount for led light tube |
US8523394B2 (en) | 2010-10-29 | 2013-09-03 | Ilumisys, Inc. | Mechanisms for reducing risk of shock during installation of light tube |
US8870415B2 (en) | 2010-12-09 | 2014-10-28 | Ilumisys, Inc. | LED fluorescent tube replacement light with reduced shock hazard |
JP5792486B2 (ja) * | 2011-03-18 | 2015-10-14 | 株式会社東芝 | 半導体発光素子および光結合装置 |
WO2013028965A2 (en) | 2011-08-24 | 2013-02-28 | Ilumisys, Inc. | Circuit board mount for led light |
US9184518B2 (en) | 2012-03-02 | 2015-11-10 | Ilumisys, Inc. | Electrical connector header for an LED-based light |
US9163794B2 (en) | 2012-07-06 | 2015-10-20 | Ilumisys, Inc. | Power supply assembly for LED-based light tube |
US9271367B2 (en) | 2012-07-09 | 2016-02-23 | Ilumisys, Inc. | System and method for controlling operation of an LED-based light |
US9285084B2 (en) | 2013-03-14 | 2016-03-15 | Ilumisys, Inc. | Diffusers for LED-based lights |
US9267650B2 (en) | 2013-10-09 | 2016-02-23 | Ilumisys, Inc. | Lens for an LED-based light |
WO2015112437A1 (en) | 2014-01-22 | 2015-07-30 | Ilumisys, Inc. | Led-based light with addressed leds |
US9510400B2 (en) | 2014-05-13 | 2016-11-29 | Ilumisys, Inc. | User input systems for an LED-based light |
US10161568B2 (en) | 2015-06-01 | 2018-12-25 | Ilumisys, Inc. | LED-based light with canted outer walls |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2856507A1 (de) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | Halbleiter-laserdiode |
JPS58219789A (ja) * | 1982-06-16 | 1983-12-21 | Hitachi Ltd | 埋込み型光半導体装置 |
US4427841A (en) * | 1982-06-29 | 1984-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Back barrier heteroface AlGaAs solar cell |
DE3234389C2 (de) * | 1982-09-16 | 1995-03-09 | Siemens Ag | Halbleiter-Laserdiode |
JPS59165474A (ja) * | 1983-03-10 | 1984-09-18 | Nec Corp | 半導体発光素子 |
GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
JPS60229389A (ja) * | 1984-04-26 | 1985-11-14 | Sharp Corp | 半導体レ−ザ素子 |
US4615032A (en) * | 1984-07-13 | 1986-09-30 | At&T Bell Laboratories | Self-aligned rib-waveguide high power laser |
JPH0722213B2 (ja) * | 1985-06-12 | 1995-03-08 | 三洋電機株式会社 | 半導体レーザ |
US4905057A (en) * | 1985-12-18 | 1990-02-27 | Hitachi, Ltd. | Semiconductor devices |
US4792958A (en) * | 1986-02-28 | 1988-12-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
EP0273344B1 (de) * | 1986-12-22 | 1992-10-14 | Nec Corporation | PNPN-Thyristor |
JPS63164484A (ja) * | 1986-12-26 | 1988-07-07 | Sharp Corp | 半導体レ−ザ素子 |
US4773945A (en) * | 1987-09-14 | 1988-09-27 | Ga Technologies, Inc. | Solar cell with low infra-red absorption and method of manufacture |
JPH01235397A (ja) * | 1988-03-16 | 1989-09-20 | Mitsubishi Electric Corp | 半導体レーザ |
-
1989
- 1989-03-28 NL NL8900748A patent/NL8900748A/nl not_active Application Discontinuation
-
1990
- 1990-03-22 DE DE69004842T patent/DE69004842T2/de not_active Expired - Fee Related
- 1990-03-22 EP EP90200679A patent/EP0390262B1/de not_active Expired - Lifetime
- 1990-03-26 KR KR1019900004035A patent/KR900015361A/ko not_active Application Discontinuation
- 1990-03-27 JP JP7580290A patent/JP3093234B2/ja not_active Expired - Fee Related
-
1994
- 1994-05-20 US US08/246,392 patent/US5381024A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR900015361A (ko) | 1990-10-26 |
JP3093234B2 (ja) | 2000-10-03 |
EP0390262B1 (de) | 1993-12-01 |
NL8900748A (nl) | 1990-10-16 |
US5381024A (en) | 1995-01-10 |
JPH02281785A (ja) | 1990-11-19 |
DE69004842T2 (de) | 1994-06-01 |
EP0390262A1 (de) | 1990-10-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US |
|
8328 | Change in the person/name/address of the agent |
Free format text: E. TERGAU UND KOLLEGEN, 90482 NUERNBERG |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US |
|
8339 | Ceased/non-payment of the annual fee |