DE602006017559D1 - Fotoresist-entfernungszusammensetzung für die halbleiterherstellung - Google Patents

Fotoresist-entfernungszusammensetzung für die halbleiterherstellung

Info

Publication number
DE602006017559D1
DE602006017559D1 DE602006017559T DE602006017559T DE602006017559D1 DE 602006017559 D1 DE602006017559 D1 DE 602006017559D1 DE 602006017559 T DE602006017559 T DE 602006017559T DE 602006017559 T DE602006017559 T DE 602006017559T DE 602006017559 D1 DE602006017559 D1 DE 602006017559D1
Authority
DE
Germany
Prior art keywords
photoresist
stripper composition
derivative
compound
fotoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006017559T
Other languages
English (en)
Inventor
Hyun Tak Kim
Seong Hwan Park
Jung Hun Lim
Sung Bae Kim
Chan Jin Jeong
Kui Jong Baek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Techno Semichem Co Ltd
Original Assignee
Techno Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050074550A external-priority patent/KR100718532B1/ko
Priority claimed from KR1020060073209A external-priority patent/KR100893280B1/ko
Priority claimed from KR1020060073202A external-priority patent/KR100893279B1/ko
Application filed by Techno Semichem Co Ltd filed Critical Techno Semichem Co Ltd
Publication of DE602006017559D1 publication Critical patent/DE602006017559D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
DE602006017559T 2005-08-13 2006-08-05 Fotoresist-entfernungszusammensetzung für die halbleiterherstellung Active DE602006017559D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020050074550A KR100718532B1 (ko) 2005-08-13 2005-08-13 반도체 제조용 감광성수지 제거제 조성물
KR1020060073209A KR100893280B1 (ko) 2006-08-03 2006-08-03 반도체 제조용 감광성수지 제거제 조성물
KR1020060073202A KR100893279B1 (ko) 2006-08-03 2006-08-03 반도체 제조용 감광성수지 제거제 조성물
PCT/KR2006/003085 WO2007021085A1 (en) 2005-08-13 2006-08-05 Photoresist stripper composition for semiconductor manufacturing

Publications (1)

Publication Number Publication Date
DE602006017559D1 true DE602006017559D1 (de) 2010-11-25

Family

ID=37757723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006017559T Active DE602006017559D1 (de) 2005-08-13 2006-08-05 Fotoresist-entfernungszusammensetzung für die halbleiterherstellung

Country Status (7)

Country Link
US (1) US7951765B2 (de)
EP (1) EP1913448B1 (de)
JP (1) JP4782200B2 (de)
AT (1) ATE484774T1 (de)
DE (1) DE602006017559D1 (de)
TW (1) TWI344065B (de)
WO (1) WO2007021085A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466093B (zh) 2007-06-26 2014-12-21 Apple Inc 用於視訊播放的管理技術
TWI479891B (zh) 2007-06-26 2015-04-01 Apple Inc 動態背光調適
US8766902B2 (en) 2007-12-21 2014-07-01 Apple Inc. Management techniques for video playback
EP2430499A2 (de) * 2009-01-22 2012-03-21 Basf Se Zusammensetzung für postchemische/mechanische reinigung
CN101787335A (zh) * 2009-01-22 2010-07-28 巴斯夫公司 用于化学机械抛光后清洗的组合物
KR101829399B1 (ko) 2010-03-04 2018-03-30 삼성전자주식회사 감광성 수지 제거제 조성물 및 이를 이용하는 반도체 제조 공정
KR20180069185A (ko) 2016-12-14 2018-06-25 삼성전자주식회사 기판 가공 방법 및 접착층 세정 조성물
KR20210093496A (ko) * 2020-01-20 2021-07-28 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
CN113394081A (zh) * 2021-05-31 2021-09-14 上海华力集成电路制造有限公司 光阻去除方法
CN117659421A (zh) * 2022-08-29 2024-03-08 清华大学 一种Zn基有机配位纳米颗粒及其制备方法、光刻胶组合物及其应用

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US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
DE69333877T2 (de) 1992-07-09 2006-06-14 Ekc Technology Inc Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
JPH085664B2 (ja) 1994-02-07 1996-01-24 住友特殊金属株式会社 希土類・鉄・ボロン系正方晶化合物
JP3406055B2 (ja) * 1994-03-31 2003-05-12 東京応化工業株式会社 ポジ型レジスト用剥離液
US5472830A (en) * 1994-04-18 1995-12-05 Ocg Microelectronic Materials, Inc. Non-corrosion photoresist stripping composition
JPH08262746A (ja) 1995-03-28 1996-10-11 Mitsubishi Gas Chem Co Inc フォトレジスト剥離剤組成物および剥離方法
JP2911792B2 (ja) 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
JP3929518B2 (ja) 1995-11-30 2007-06-13 東京応化工業株式会社 レジスト用剥離液組成物
US6268323B1 (en) * 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition
JP4224651B2 (ja) 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
KR100360985B1 (ko) 2000-04-26 2002-11-18 주식회사 동진쎄미켐 레지스트 스트리퍼 조성물
JP2001350276A (ja) * 2000-06-05 2001-12-21 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物及びその使用方法
JP2002196509A (ja) 2000-12-25 2002-07-12 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物及びその使用方法
JP4810764B2 (ja) * 2001-06-29 2011-11-09 三菱瓦斯化学株式会社 レジスト剥離剤組成物
KR100546169B1 (ko) 2001-09-21 2006-01-24 주식회사 하이닉스반도체 포토레지스트 제거용 용액 조성물
KR100569533B1 (ko) * 2001-10-25 2006-04-07 주식회사 하이닉스반도체 포토레지스트 세정용 조성물
JP3738992B2 (ja) * 2001-12-27 2006-01-25 東京応化工業株式会社 ホトレジスト用剥離液
KR100862988B1 (ko) * 2002-09-30 2008-10-13 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
JP4289866B2 (ja) 2002-10-29 2009-07-01 コクヨ株式会社 卓上整理棚
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
KR100964801B1 (ko) * 2003-06-26 2010-06-22 동우 화인켐 주식회사 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트박리방법
JP4202859B2 (ja) * 2003-08-05 2008-12-24 花王株式会社 レジスト用剥離剤組成物

Also Published As

Publication number Publication date
TWI344065B (en) 2011-06-21
ATE484774T1 (de) 2010-10-15
US20090312216A1 (en) 2009-12-17
JP4782200B2 (ja) 2011-09-28
EP1913448A4 (de) 2008-11-05
EP1913448B1 (de) 2010-10-13
EP1913448A1 (de) 2008-04-23
WO2007021085A1 (en) 2007-02-22
JP2009505132A (ja) 2009-02-05
US7951765B2 (en) 2011-05-31
TW200719099A (en) 2007-05-16

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