DE3777558D1 - Integrierte speicherschaltung mit einer einzigen schreibe-busschaltung. - Google Patents

Integrierte speicherschaltung mit einer einzigen schreibe-busschaltung.

Info

Publication number
DE3777558D1
DE3777558D1 DE8787201748T DE3777558T DE3777558D1 DE 3777558 D1 DE3777558 D1 DE 3777558D1 DE 8787201748 T DE8787201748 T DE 8787201748T DE 3777558 T DE3777558 T DE 3777558T DE 3777558 D1 DE3777558 D1 DE 3777558D1
Authority
DE
Germany
Prior art keywords
circuit
integrated memory
single write
write bus
memory circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787201748T
Other languages
English (en)
Inventor
Leonardus Chritien M Pfennings
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3777558D1 publication Critical patent/DE3777558D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE8787201748T 1986-09-29 1987-09-14 Integrierte speicherschaltung mit einer einzigen schreibe-busschaltung. Expired - Lifetime DE3777558D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8602450A NL8602450A (nl) 1986-09-29 1986-09-29 Geintegreerde geheugenschakeling met een enkelvoudige-schrijfbus circuit.

Publications (1)

Publication Number Publication Date
DE3777558D1 true DE3777558D1 (de) 1992-04-23

Family

ID=19848608

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787201748T Expired - Lifetime DE3777558D1 (de) 1986-09-29 1987-09-14 Integrierte speicherschaltung mit einer einzigen schreibe-busschaltung.

Country Status (7)

Country Link
US (1) US4823319A (de)
EP (1) EP0270137B1 (de)
JP (1) JP2643953B2 (de)
KR (1) KR960000887B1 (de)
DE (1) DE3777558D1 (de)
IE (1) IE62419B1 (de)
NL (1) NL8602450A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1231902B (it) * 1987-10-20 1992-01-15 Sgs Microelettronica Spa Memoria elettronica cmos di sola lettura a funzionamento statico
KR910002034B1 (ko) * 1988-07-21 1991-03-30 삼성전자 주식회사 다분할형 메모리 어레이의 충전등화회로
US4926387A (en) * 1988-12-27 1990-05-15 Intel Corporation Memory timing circuit employing scaled-down models of bit lines using reduced number of memory cells
KR920010345B1 (ko) * 1990-06-30 1992-11-27 삼성전자 주식회사 선충전수단을 구비한 라이트 드라이버(write driver)
US5155703A (en) * 1990-07-06 1992-10-13 Motorola, Inc. Bicmos bit line load for a memory with improved reliability
US5122986A (en) * 1990-11-21 1992-06-16 Micron Technology, Inc. Two transistor dram cell
JPH0660665A (ja) * 1992-08-10 1994-03-04 Nec Corp 半導体スタティックｒａｍのビット線負荷回路
JPH07141881A (ja) * 1993-03-31 1995-06-02 Sgs Thomson Microelectron Inc 階層的ビットラインメモリアーキテクチュア
US6750107B1 (en) * 1996-01-31 2004-06-15 Micron Technology, Inc. Method and apparatus for isolating a SRAM cell
KR100600047B1 (ko) * 2004-05-06 2006-07-13 주식회사 하이닉스반도체 반도체 메모리 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
JPS5088944A (de) * 1973-12-10 1975-07-17
US4133611A (en) * 1977-07-08 1979-01-09 Xerox Corporation Two-page interweaved random access memory configuration
JPS55157194A (en) * 1979-05-23 1980-12-06 Fujitsu Ltd Semiconductor memory device
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
JPS592997B2 (ja) * 1980-05-22 1984-01-21 富士通株式会社 スタテイツクメモリ
US4355377A (en) * 1980-06-30 1982-10-19 Inmos Corporation Asynchronously equillibrated and pre-charged static ram
JPS6043296A (ja) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp 半導体記憶装置
JPS60154394A (ja) * 1983-09-21 1985-08-14 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド 半導体メモリのビツト線負荷
US4715014A (en) * 1985-10-29 1987-12-22 Texas Instruments Incorporated Modified three transistor EEPROM cell

Also Published As

Publication number Publication date
NL8602450A (nl) 1988-04-18
US4823319A (en) 1989-04-18
EP0270137B1 (de) 1992-03-18
KR880004485A (ko) 1988-06-07
IE62419B1 (en) 1995-01-25
KR960000887B1 (ko) 1996-01-13
EP0270137A1 (de) 1988-06-08
JPS63247992A (ja) 1988-10-14
IE872598L (en) 1988-03-29
JP2643953B2 (ja) 1997-08-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee