DE3583629D1 - Integrierte schaltung mit einer schmelzsicherungsschaltung. - Google Patents

Integrierte schaltung mit einer schmelzsicherungsschaltung.

Info

Publication number
DE3583629D1
DE3583629D1 DE8585400383T DE3583629T DE3583629D1 DE 3583629 D1 DE3583629 D1 DE 3583629D1 DE 8585400383 T DE8585400383 T DE 8585400383T DE 3583629 T DE3583629 T DE 3583629T DE 3583629 D1 DE3583629 D1 DE 3583629D1
Authority
DE
Germany
Prior art keywords
circuit
melt
fuse
integrated circuit
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585400383T
Other languages
English (en)
Inventor
Tadayoshi Kunitoki
Kunihiko Gotoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3583629D1 publication Critical patent/DE3583629D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Analogue/Digital Conversion (AREA)
  • Logic Circuits (AREA)
DE8585400383T 1984-02-29 1985-02-28 Integrierte schaltung mit einer schmelzsicherungsschaltung. Expired - Fee Related DE3583629D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59037927A JPS60182219A (ja) 1984-02-29 1984-02-29 半導体装置

Publications (1)

Publication Number Publication Date
DE3583629D1 true DE3583629D1 (de) 1991-09-05

Family

ID=12511183

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585400383T Expired - Fee Related DE3583629D1 (de) 1984-02-29 1985-02-28 Integrierte schaltung mit einer schmelzsicherungsschaltung.

Country Status (5)

Country Link
US (1) US4730129A (de)
EP (1) EP0161947B1 (de)
JP (1) JPS60182219A (de)
KR (1) KR900003938B1 (de)
DE (1) DE3583629D1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2228091B (en) * 1989-02-08 1992-09-23 Westinghouse Brake & Signal Current monitoring
DE58908287D1 (de) * 1989-06-30 1994-10-06 Siemens Ag Integrierte Schaltungsanordnung.
FR2660795B1 (fr) * 1990-04-10 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de detection de fusible.
US5151611A (en) * 1990-12-10 1992-09-29 Westinghouse Electric Corp. Programmable device for integrated circuits
JPH05315448A (ja) * 1992-04-27 1993-11-26 Nec Corp 集積回路装置およびそのレイアウト方法
US5418487A (en) * 1992-09-04 1995-05-23 Benchmarg Microelectronics, Inc. Fuse state sense circuit
FR2697673B1 (fr) * 1992-10-29 1994-12-16 Gemplus Card Int Circuit à fusible, pour circuit intégré.
US5361185A (en) * 1993-02-19 1994-11-01 Advanced Micro Devices, Inc. Distributed VCC/VSS ESD clamp structure
US5345110A (en) * 1993-04-13 1994-09-06 Micron Semiconductor, Inc. Low-power fuse detect and latch circuit
JP2707954B2 (ja) * 1993-09-01 1998-02-04 日本電気株式会社 コード設定回路
US5635854A (en) * 1994-05-24 1997-06-03 Philips Electronics North America Corporation Programmable logic integrated circuit including verify circuitry for classifying fuse link states as validly closed, validly open or invalid
US6100747A (en) * 1994-05-30 2000-08-08 Stmicroelectronics, S.R.L. Device for selecting design options in an integrated circuit
US5514980A (en) * 1995-05-31 1996-05-07 Integrated Device Technology, Inc. High resolution circuit and method for sensing antifuses
US5789970A (en) * 1995-09-29 1998-08-04 Intel Corporation Static, low current, low voltage sensing circuit for sensing the state of a fuse device
US5731733A (en) * 1995-09-29 1998-03-24 Intel Corporation Static, low current sensing circuit for sensing the state of a fuse device
US5959445A (en) * 1995-09-29 1999-09-28 Intel Corporation Static, high-sensitivity, fuse-based storage cell
US5748025A (en) * 1996-03-29 1998-05-05 Intel Corporation Method and apparatus for providing high voltage with a low voltage CMOS integrated circuit
US6096610A (en) * 1996-03-29 2000-08-01 Intel Corporation Transistor suitable for high voltage circuit
US5896041A (en) * 1996-05-28 1999-04-20 Micron Technology, Inc. Method and apparatus for programming anti-fuses using internally generated programming voltage
US5841723A (en) * 1996-05-28 1998-11-24 Micron Technology, Inc. Method and apparatus for programming anti-fuses using an isolated well programming circuit
DE69712302T2 (de) 1996-12-31 2002-10-24 St Microelectronics Inc Struktur und Bauelement zur Auswahl von Entwurfsmöglichkeiten in einem integrierten Schaltkreis
KR100247937B1 (ko) * 1997-11-12 2000-03-15 윤종용 퓨징 장치
KR100287541B1 (ko) 1998-05-29 2001-04-16 윤종용 반도체 메모리 장치의 리던던시 디코더 인에이블회로
US6191641B1 (en) * 1999-02-23 2001-02-20 Clear Logic, Inc. Zero power fuse circuit using subthreshold conduction
JP2000340656A (ja) * 1999-05-28 2000-12-08 Fujitsu Ltd トリミング回路
KR100317490B1 (ko) * 1999-12-29 2001-12-24 박종섭 안티퓨즈 회로
JP2002203901A (ja) * 2000-12-27 2002-07-19 Toshiba Microelectronics Corp フューズ回路
US6417720B1 (en) * 2000-12-28 2002-07-09 Intel Corporation High voltage sense circuit for programming of programmable devices
JP2002217416A (ja) * 2001-01-16 2002-08-02 Hitachi Ltd 半導体装置
DE10156830B4 (de) 2001-11-20 2005-05-12 Infineon Technologies Ag Integrierte Schaltung mit einem programmierbaren Element und Verfahren zu ihrem Betrieb
KR100427721B1 (ko) * 2002-07-18 2004-04-28 주식회사 하이닉스반도체 전기적 퓨즈 프로그래밍 제어회로
JP4137888B2 (ja) 2003-05-13 2008-08-20 富士通株式会社 半導体集積回路装置
US7315193B2 (en) * 2005-08-24 2008-01-01 International Business Machines Corporation Circuitry and method for programming an electrically programmable fuse
DE102006017480B4 (de) * 2006-04-13 2008-11-27 Austriamicrosystems Ag Schaltungsanordnung mit einer nicht-flüchtigen Speicherzelle und Verfahren
US7888771B1 (en) 2007-05-02 2011-02-15 Xilinx, Inc. E-fuse with scalable filament link
JP5160164B2 (ja) * 2007-08-06 2013-03-13 ルネサスエレクトロニクス株式会社 ヒューズ回路
US8564023B2 (en) * 2008-03-06 2013-10-22 Xilinx, Inc. Integrated circuit with MOSFET fuse element
US7923811B1 (en) 2008-03-06 2011-04-12 Xilinx, Inc. Electronic fuse cell with enhanced thermal gradient
CN104751895B (zh) * 2013-12-31 2018-08-10 中芯国际集成电路制造(上海)有限公司 存储器、电熔丝存储阵列的检测电路及方法
CN107464585B (zh) * 2016-06-06 2020-02-28 华邦电子股份有限公司 电子式熔丝装置以及电子式熔丝阵列
US10360988B2 (en) 2016-11-02 2019-07-23 Skyworks Solutions, Inc. Apparatus and methods for protection against inadvertent programming of fuse cells
US10255982B2 (en) * 2016-11-02 2019-04-09 Skyworks Solutions, Inc. Accidental fuse programming protection circuits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2614781B2 (de) * 1976-04-06 1979-04-05 Robert Bosch Gmbh, 7000 Stuttgart Integrierte Schaltungsanordnung
US4329685A (en) * 1980-06-09 1982-05-11 Burroughs Corporation Controlled selective disconnect system for wafer scale integrated circuits
US4446534A (en) * 1980-12-08 1984-05-01 National Semiconductor Corporation Programmable fuse circuit
US4532607A (en) * 1981-07-22 1985-07-30 Tokyo Shibaura Denki Kabushiki Kaisha Programmable circuit including a latch to store a fuse's state
JPS6043300A (ja) * 1983-08-17 1985-03-07 Toshiba Corp 感知増幅回路

Also Published As

Publication number Publication date
US4730129A (en) 1988-03-08
JPS60182219A (ja) 1985-09-17
EP0161947A3 (en) 1987-10-21
KR900003938B1 (ko) 1990-06-04
JPH0428175B2 (de) 1992-05-13
EP0161947A2 (de) 1985-11-21
EP0161947B1 (de) 1991-07-31
KR850006651A (ko) 1985-10-14

Similar Documents

Publication Publication Date Title
DE3583629D1 (de) Integrierte schaltung mit einer schmelzsicherungsschaltung.
DE3575903D1 (de) Befestigung mit einer zeitweiligen verbindungsschicht.
DE3579130D1 (de) Halbleiter-anordnungen mit einer vergrabenen heterostruktur.
IT8522191A0 (it) Dispositivi a microstriscia.
FI850868L (fi) Elektroniskt stroe-system.
DE3587715D1 (de) Integrierte Schaltung.
DE3768655D1 (de) Verstaerker mit einer konstantstromvorspannungsschaltung.
DE68916089D1 (de) Integrierte Schaltung mit einer programmierbaren Zelle.
DE3586375D1 (de) Halbleiterspeicheranordnung mit einer redundanzschaltung.
DE3885532D1 (de) Halbleiter-Speicherschaltung mit einer Verzögerungsschaltung.
DE3851392D1 (de) Halbleiteranordnung mit einer Leiterschicht.
DE69010034D1 (de) Halbleiteranordnung mit einer Schutzschaltung.
DE3584397D1 (de) Verriegelungsschaltung.
DE58907795D1 (de) Baugruppe mit einer Leiterplatte.
DE3585187D1 (de) Elektronische drucktafel.
DE3575246D1 (de) Stromflussumkehrschaltkreis.
DE3583886D1 (de) Integrierte schaltung mit einer eingangsschutzanordnung.
DE59001475D1 (de) Isolierendes gehaeuseteil mit einer leiterdurchfuehrung.
DE3581159D1 (de) Halbleiteranordnung mit integrierter schaltung.
NO159031C (no) Offshore fagverkstaarn.
DE3585173D1 (de) Halbleiterbauelement mit versenktem kondensator.
DE3767200D1 (de) Mit einer thenoylgruppe substituierte di-t-butylphenole.
DE68910705D1 (de) Integrierte Halbleiterschaltung mit einer Pegelumsetzungsschaltung.
FI853438A0 (fi) Saoganordning och -foerfarande.
DE3584720D1 (de) Majoritaetsschaltung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee