DE3779705D1 - Integrierte speicherschaltung mit blockadressierung. - Google Patents

Integrierte speicherschaltung mit blockadressierung.

Info

Publication number: DE3779705D1
Authority: DE; Germany
Prior art keywords: memory circuit; integrated memory; block addressing; addressing; block
Prior art date: 1986-08-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8787201432T

Other languages

English (en)

Other versions

DE3779705T2 (de

Inventor

Leonardus Chritien M Pfennings

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-08-27

Filing date

1987-07-24

Publication date

1992-07-16

1987-07-24 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1992-07-16 Application granted granted Critical

1992-07-16 Publication of DE3779705D1 publication Critical patent/DE3779705D1/de

1993-01-21 Publication of DE3779705T2 publication Critical patent/DE3779705T2/de

2007-07-25 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)
Static Random-Access Memory (AREA)
Dram (AREA)

DE8787201432T 1986-08-27 1987-07-24 Integrierte speicherschaltung mit blockadressierung. Expired - Lifetime DE3779705T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
NL8602178A NL8602178A (nl)	1986-08-27	1986-08-27	Geintegreerde geheugenschakeling met blokselektie.

Publications (2)

Publication Number	Publication Date
DE3779705D1 true DE3779705D1 (de)	1992-07-16
DE3779705T2 DE3779705T2 (de)	1993-01-21

Family

ID=19848464

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787201432T Expired - Lifetime DE3779705T2 (de)	1986-08-27	1987-07-24	Integrierte speicherschaltung mit blockadressierung.

Country Status (7)

Country	Link
US (1)	US4849943A (de)
EP (1)	EP0257680B1 (de)
JP (1)	JP2602508B2 (de)
KR (1)	KR960001782B1 (de)
DE (1)	DE3779705T2 (de)
IE (1)	IE60222B1 (de)
NL (1)	NL8602178A (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR910008099B1 (ko) *	1988-07-21	1991-10-07	삼성반도체통신주식회사	메모리 칩의 파워 및 시그널라인 버싱방법
JP2628194B2 (ja) *	1988-07-28	1997-07-09	株式会社日立製作所	データ処理装置
US5278802A (en) *	1988-10-28	1994-01-11	Texas Instruments Incorporated	Decoding global drive/boot signals using local predecoders
JPH0772991B2 (ja) *	1988-12-06	1995-08-02	三菱電機株式会社	半導体記憶装置
US5184321A (en) *	1988-12-06	1993-02-02	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device comprising a plurality of memory arrays with improved peripheral circuit location and interconnection arrangement
JPH0659209B2 (ja) *	1989-06-09	1994-08-10	新エネルギー・産業技術総合開発機構	液量可変型発酵槽
US5195053A (en) *	1989-08-30	1993-03-16	Nec Corporation	Semiconductor memory device wired to accommodate increased capacity without increasing the size of the semiconductor memory device
US5040144A (en) *	1989-11-28	1991-08-13	Motorola, Inc.	Integrated circuit with improved power supply distribution
US5245570A (en) *	1990-12-21	1993-09-14	Intel Corporation	Floating gate non-volatile memory blocks and select transistors
JPH04307495A (ja) *	1991-04-04	1992-10-29	Mitsubishi Electric Corp	半導体記憶装置
KR950004853B1 (ko) *	1991-08-14	1995-05-15	삼성전자 주식회사	저전력용 블럭 선택 기능을 가지는 반도체 메모리 장치
KR940003400B1 (ko) *	1991-08-27	1994-04-21	삼성전자 주식회사	반도체 기억장치
IT1253680B (it) *	1991-08-30	1995-08-22	St Microelectronics Srl	Decodificatore per rom di tipo nand
JP3108505B2 (ja) *	1992-03-13	2000-11-13	沖電気工業株式会社	デコーダ回路
US5280447A (en) *	1992-06-19	1994-01-18	Intel Corporation	Floating gate nonvolatile memory with configurable erasure blocks
US5267196A (en) *	1992-06-19	1993-11-30	Intel Corporation	Floating gate nonvolatile memory with distributed blocking feature
US5325336A (en) *	1992-09-10	1994-06-28	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device having power line arranged in a meshed shape
US5621690A (en) *	1995-04-28	1997-04-15	Intel Corporation	Nonvolatile memory blocking architecture and redundancy
US5663923A (en) *	1995-04-28	1997-09-02	Intel Corporation	Nonvolatile memory blocking architecture
US5959892A (en) *	1997-08-26	1999-09-28	Macronix International Co., Ltd.	Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
DE19952258A1 (de) *	1999-10-29	2001-05-10	Infineon Technologies Ag	Integrierter Speicher
EP1113368A3 (de) *	1999-12-27	2001-09-26	Matsushita Electric Industrial Co., Ltd.	Integrierte Halbleiterschaltung mit Cache-Speicher
US6711646B1 (en) *	2000-10-20	2004-03-23	Sun Microsystems, Inc.	Dual mode (registered/unbuffered) memory interface

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3380678D1 (en) *	1983-05-25	1989-11-09	Ibm Deutschland	Semiconductor memory
JPS6050796A (ja) *	1983-08-31	1985-03-20	Toshiba Corp	半導体記憶装置
US4554646A (en) *	1983-10-17	1985-11-19	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device
JPS60167188A (ja) *	1984-12-24	1985-08-30	Hitachi Ltd	半導体メモリ
NL8500434A (nl) *	1985-02-15	1986-09-01	Philips Nv	Geintegreerde geheugenschakeling met blokselektie.
US4729118A (en) *	1986-03-10	1988-03-01	Texas Instruments Incorporated	On-chip converter to reversibly change memory organization using external signals

1986
- 1986-08-27 NL NL8602178A patent/NL8602178A/nl not_active Application Discontinuation
1987
- 1987-07-24 DE DE8787201432T patent/DE3779705T2/de not_active Expired - Lifetime
- 1987-07-24 US US07/077,154 patent/US4849943A/en not_active Expired - Lifetime
- 1987-07-24 EP EP87201432A patent/EP0257680B1/de not_active Expired - Lifetime
- 1987-08-24 IE IE225587A patent/IE60222B1/en not_active IP Right Cessation
- 1987-08-24 KR KR87009221A patent/KR960001782B1/ko not_active IP Right Cessation
- 1987-08-24 JP JP62208376A patent/JP2602508B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPS6363193A (ja)	1988-03-19
KR960001782B1 (en)	1996-02-05
IE60222B1 (en)	1994-06-15
KR880003332A (ko)	1988-05-16
EP0257680B1 (de)	1992-06-10
IE872255L (en)	1988-02-27
DE3779705T2 (de)	1993-01-21
EP0257680A1 (de)	1988-03-02
JP2602508B2 (ja)	1997-04-23
US4849943A (en)	1989-07-18
NL8602178A (nl)	1988-03-16

Legal Events

Date	Code	Title	Description
1993-07-08	8364	No opposition during term of opposition
1995-06-22	8327	Change in the person/name/address of the patent owner	Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL
1999-12-16	8327	Change in the person/name/address of the patent owner	Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

Publication	Publication Date	Title
DE3788487D1 (de)	1994-01-27	Integrierte Schaltung mit Speicherselbstprüfung.
DE3779705D1 (de)	1992-07-16	Integrierte speicherschaltung mit blockadressierung.
DE69019697D1 (de)	1995-06-29	Reparierbare Speicherschaltung.
DE68920243D1 (de)	1995-02-09	Halbleiter-Speicherschaltung.
DE3774893D1 (de)	1992-01-16	Speicherkarte mit eingebetteter, integrierter schaltung.
DE3778439D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE3751002D1 (de)	1995-03-02	Halbleiterspeicher.
DE3782756D1 (de)	1993-01-07	Direktzugriffspeichereinrichtung.
DE3769564D1 (de)	1991-05-29	Logische schaltung.
DE3584142D1 (de)	1991-10-24	Integrierte halbleiterschaltungsanordnung mit eingebauten speichern.
DE3788747D1 (de)	1994-02-24	Halbleiterspeicher.
DE3779784D1 (de)	1992-07-23	Logische schaltung.
DE3772137D1 (de)	1991-09-19	Halbleiter-speicheranordnung.
DE3771238D1 (de)	1991-08-14	Halbleiterspeicher.
DE3778408D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE3787616D1 (de)	1993-11-04	Halbleiterspeicheranordnung.
DE3852131D1 (de)	1994-12-22	Speicherkarte.
DE3783666D1 (de)	1993-03-04	Halbleiterspeicheranordnung.
DE3776049D1 (de)	1992-02-27	Elektronische gedaechtnisstuetze.
DE3783100D1 (de)	1993-01-28	Festwertspeicheranordnung.
DE69020764D1 (de)	1995-08-17	Speicheradressierung.
DE3887823D1 (de)	1994-03-24	Halbleiterspeicher.
DE68919402D1 (de)	1994-12-22	Speicherkarte.
NL194178B (nl)	2001-04-02	Halfgeleidergeheugeneenheid.
DE3783493D1 (de)	1993-02-25	Halbleiterspeicheranordnung.