DE3478060D1 - Method for forming resist pattern - Google Patents

Method for forming resist pattern

Info

Publication number
DE3478060D1
DE3478060D1 DE8484300297T DE3478060T DE3478060D1 DE 3478060 D1 DE3478060 D1 DE 3478060D1 DE 8484300297 T DE8484300297 T DE 8484300297T DE 3478060 T DE3478060 T DE 3478060T DE 3478060 D1 DE3478060 D1 DE 3478060D1
Authority
DE
Germany
Prior art keywords
resist pattern
forming resist
forming
pattern
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484300297T
Other languages
English (en)
Inventor
Yoshihide Kato
Kei Kirita
Toshiaki Shinozaki
Fumiaki Shigemitsu
Kinya Usuda
Takashi Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP698583A external-priority patent/JPS59132619A/ja
Priority claimed from JP587683A external-priority patent/JPS59132127A/ja
Priority claimed from JP698483A external-priority patent/JPS59132618A/ja
Priority claimed from JP587783A external-priority patent/JPS59132128A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3478060D1 publication Critical patent/DE3478060D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE8484300297T 1983-01-19 1984-01-18 Method for forming resist pattern Expired DE3478060D1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP698583A JPS59132619A (ja) 1983-01-19 1983-01-19 レジストパタ−ンの形成方法及びその装置
JP587683A JPS59132127A (ja) 1983-01-19 1983-01-19 レジストパタ−ンの形成方法及び装置
JP698483A JPS59132618A (ja) 1983-01-19 1983-01-19 レジストパタ−ンの形成方法及びその装置
JP587783A JPS59132128A (ja) 1983-01-19 1983-01-19 レジストパタ−ンの形成方法及び装置

Publications (1)

Publication Number Publication Date
DE3478060D1 true DE3478060D1 (en) 1989-06-08

Family

ID=27454380

Family Applications (2)

Application Number Title Priority Date Filing Date
DE88102726T Expired - Lifetime DE3486187T2 (de) 1983-01-19 1984-01-18 Verfahren und Vorrichtung zur Herstellung von Schutzlackbildern.
DE8484300297T Expired DE3478060D1 (en) 1983-01-19 1984-01-18 Method for forming resist pattern

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE88102726T Expired - Lifetime DE3486187T2 (de) 1983-01-19 1984-01-18 Verfahren und Vorrichtung zur Herstellung von Schutzlackbildern.

Country Status (4)

Country Link
US (2) US4717645A (de)
EP (2) EP0275126B1 (de)
KR (1) KR860002082B1 (de)
DE (2) DE3486187T2 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897337A (en) * 1983-01-19 1990-01-30 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for forming resist pattern
KR860002082B1 (ko) * 1983-01-19 1986-11-24 가부시기가이샤 도시바 레지스트 패턴의 형성 방법 및 장치
US5066561A (en) * 1984-06-11 1991-11-19 Hoechst Celanese Corporation Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US5143814A (en) * 1984-06-11 1992-09-01 Hoechst Celanese Corporation Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
DE3580978D1 (de) * 1984-12-21 1991-01-31 Toshiba Kawasaki Kk Verfahren zur herstellung von resistmustern.
DE3664824D1 (en) * 1985-10-25 1989-09-07 Hoechst Celanese Corp Process for producing a positive photoresist
JPS6381820A (ja) * 1986-09-25 1988-04-12 Toshiba Corp レジストパタ−ン形成方法
JPS63291419A (ja) * 1987-05-24 1988-11-29 Tatsumo Kk 加熱処理装置
US4814243A (en) * 1987-09-08 1989-03-21 American Telephone And Telegraph Company Thermal processing of photoresist materials
US4883744A (en) * 1988-05-17 1989-11-28 International Business Machines Corporation Forming a polymide pattern on a substrate
US5306601A (en) * 1988-06-29 1994-04-26 Matsushita Electric Industrial Co., Ltd. Fine pattern forming material and pattern forming method
JPH0385544A (ja) * 1989-08-30 1991-04-10 Toshiba Corp レジストパターン形成方法
US5371046A (en) * 1993-07-22 1994-12-06 Taiwan Semiconductor Manufacturing Company Method to solve sog non-uniformity in the VLSI process
TW301037B (de) * 1993-11-19 1997-03-21 Sony Co Ltd
JP3983831B2 (ja) * 1995-05-30 2007-09-26 シグマメルテック株式会社 基板ベーキング装置及び基板ベーキング方法
US6030851A (en) * 1995-06-07 2000-02-29 Grandmont; Paul E. Method for overpressure protected pressure sensor
US6073366A (en) * 1997-07-11 2000-06-13 Asm America, Inc. Substrate cooling system and method
US6108937A (en) 1998-09-10 2000-08-29 Asm America, Inc. Method of cooling wafers
US6957690B1 (en) 1998-09-10 2005-10-25 Asm America, Inc. Apparatus for thermal treatment of substrates
WO2000057456A1 (en) * 1999-03-19 2000-09-28 Electron Vision Corporation Cluster tool for wafer processing having an electron beam exposure module
KR100286348B1 (ko) * 1999-04-02 2001-03-15 김영환 반도체 포토공정의 노광방법
JP3445757B2 (ja) * 1999-05-06 2003-09-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
AU5448200A (en) 1999-05-27 2000-12-18 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
SG168411A1 (en) 2000-02-01 2011-02-28 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
US6951221B2 (en) * 2000-09-22 2005-10-04 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6495801B2 (en) * 2001-04-04 2002-12-17 Howard A. Fromson Method and apparatus for heating printing plates
TW589723B (en) * 2001-09-10 2004-06-01 Ebara Corp Detecting apparatus and device manufacturing method
JP4030787B2 (ja) * 2002-03-04 2008-01-09 東京エレクトロン株式会社 基板加熱方法、基板加熱装置及び塗布、現像装置
US20030215723A1 (en) * 2002-04-19 2003-11-20 Bearinger Jane P. Methods and apparatus for selective, oxidative patterning of a surface
US20040159335A1 (en) * 2002-05-17 2004-08-19 P.C.T. Systems, Inc. Method and apparatus for removing organic layers
AU2003270613A1 (en) * 2002-09-10 2004-04-30 Axcelis Technologies, Inc. Method of heating a substrate in a variable temperature process using a fixed temperature chuck
DE10243742B4 (de) * 2002-09-20 2007-11-08 Qimonda Ag Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists
US7107901B2 (en) * 2003-10-14 2006-09-19 International Business Machines Corporation Method and apparatus for rapid cooling of metal screening masks
JP4788610B2 (ja) * 2007-01-17 2011-10-05 東京エレクトロン株式会社 加熱装置、塗布、現像装置、加熱方法及び記憶媒体
EP3047308B1 (de) 2013-09-18 2020-11-11 Koninklijke Philips N.V. Lasergeätzte szintillationskristalle für erhöhte leistung
JP6467260B2 (ja) * 2015-03-24 2019-02-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN104950581A (zh) * 2015-07-02 2015-09-30 武汉华星光电技术有限公司 烘烤装置和光刻胶层的硬化方法
KR102353946B1 (ko) * 2020-02-25 2022-01-20 주식회사 나노바이오시스템 치주조직 재생 유도제 및 이의 제조장치와 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1472454A (en) * 1920-08-23 1923-10-30 Powers Photo Engraving Company Means for cooling photomechanical printing plates
US2094734A (en) * 1935-01-09 1937-10-05 J O Ross Engineering Corp Cooling system for processed sheets after coating, drying, or baking
US2122198A (en) * 1936-03-25 1938-06-28 Fletcher R Edes Apparatus for conditioning engraving plates
DE1522782A1 (de) * 1964-03-09 1970-02-26 Gottfried Matthaes Kopiermaschine zum UEbertragen von Vorlagen auf Platten im Photokopierverfahren
US3939000A (en) * 1973-11-21 1976-02-17 E. I. Du Pont De Nemours And Company Flat photographic film produced by heating above the second order transition temperature of the base
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
SE446036B (sv) * 1978-08-11 1986-08-04 Asahi Chemical Ind Sett och anordning for framstellning av en termiskt framkallningsbar bildframstellningskiva
US4241165A (en) * 1978-09-05 1980-12-23 Motorola, Inc. Plasma development process for photoresist
DE3038605A1 (de) * 1980-10-13 1982-06-03 Hoechst Ag, 6000 Frankfurt Verfahren zur herstellung von reliefkopien
US4423137A (en) * 1980-10-28 1983-12-27 Quixote Corporation Contact printing and etching method of making high density recording medium
JPS57169244A (en) * 1981-04-13 1982-10-18 Canon Inc Temperature controller for mask and wafer
JPS58199349A (ja) * 1982-05-17 1983-11-19 Toshiba Corp 写真蝕刻のインライン装置
KR860002082B1 (ko) * 1983-01-19 1986-11-24 가부시기가이샤 도시바 레지스트 패턴의 형성 방법 및 장치
JPS6021522A (ja) * 1983-07-15 1985-02-02 Toshiba Corp レジストパタ−ン形成方法
JPS60117627A (ja) * 1983-11-30 1985-06-25 Toshiba Corp レジストパタ−ンの形成方法及びレジスト処理装置

Also Published As

Publication number Publication date
KR860002082B1 (ko) 1986-11-24
DE3486187T2 (de) 1993-12-23
EP0275126A3 (en) 1989-10-25
KR840007482A (ko) 1984-12-07
EP0114126A2 (de) 1984-07-25
US5051338A (en) 1991-09-24
EP0114126A3 (en) 1985-11-06
DE3486187D1 (de) 1993-09-02
US4717645A (en) 1988-01-05
EP0114126B1 (de) 1989-05-03
EP0275126A2 (de) 1988-07-20
EP0275126B1 (de) 1993-07-28

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)