DE3280202D1 - Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit. - Google Patents
Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit.Info
- Publication number
- DE3280202D1 DE3280202D1 DE8282301126T DE3280202T DE3280202D1 DE 3280202 D1 DE3280202 D1 DE 3280202D1 DE 8282301126 T DE8282301126 T DE 8282301126T DE 3280202 T DE3280202 T DE 3280202T DE 3280202 D1 DE3280202 D1 DE 3280202D1
- Authority
- DE
- Germany
- Prior art keywords
- heterouition
- semiconductor device
- high electronic
- electronic mobility
- mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1127—Devices with PN heterojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1127—Devices with PN heterojunction gate
- H01L31/1129—Devices with PN heterojunction gate the device being a field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56032088A JPS57147284A (en) | 1981-03-06 | 1981-03-06 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3280202D1 true DE3280202D1 (de) | 1990-08-09 |
Family
ID=12349118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282301126T Expired - Fee Related DE3280202D1 (de) | 1981-03-06 | 1982-03-05 | Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4734750A (de) |
EP (1) | EP0060657B1 (de) |
JP (1) | JPS57147284A (de) |
DE (1) | DE3280202D1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0067721B1 (de) * | 1981-06-17 | 1989-04-26 | Hitachi, Ltd. | Halbleiteranordnung mit Heteroübergängen |
JPS5992580A (ja) * | 1982-10-21 | 1984-05-28 | ウエスターン エレクトリック カムパニー,インコーポレーテッド | 光検出器 |
JPS6041262A (ja) * | 1983-08-16 | 1985-03-04 | Oki Electric Ind Co Ltd | 半導体装置 |
JPS60140752A (ja) * | 1983-12-28 | 1985-07-25 | Olympus Optical Co Ltd | 半導体光電変換装置 |
GB2172742B (en) * | 1985-03-21 | 1988-08-24 | Stc Plc | Photoconductor |
DE3687049T2 (de) * | 1985-04-05 | 1993-03-25 | Nippon Electric Co | Bipolare eigenschaften aufweisender transistor mit heterouebergang. |
GB2176935B (en) * | 1985-06-21 | 1988-11-23 | Stc Plc | Photoconductor |
JPS63114176A (ja) * | 1986-10-31 | 1988-05-19 | Fujitsu Ltd | 高速電界効果半導体装置 |
US4970566A (en) * | 1988-08-08 | 1990-11-13 | Trw Inc. | High speed photo detector |
US5021841A (en) * | 1988-10-14 | 1991-06-04 | University Of Illinois | Semiconductor device with controlled negative differential resistance characteristic |
JP2503616B2 (ja) * | 1988-12-27 | 1996-06-05 | 日本電気株式会社 | 半導体装置 |
US5227644A (en) * | 1989-07-06 | 1993-07-13 | Nec Corporation | Heterojunction field effect transistor with improve carrier density and mobility |
US5242846A (en) * | 1989-10-30 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a junction field effect transistor |
EP0480354B1 (de) * | 1990-10-08 | 1997-02-26 | Canon Kabushiki Kaisha | Elektronenwelleninterferenz-Bauelement und diesbezügliches Verfahren zur Modulation eines Interferenzstromes |
GB2306769B (en) * | 1995-10-16 | 1997-09-17 | Toshiba Cambridge Res Center | Radiation detector |
US7781801B2 (en) * | 2006-09-25 | 2010-08-24 | Alcatel-Lucent Usa Inc. | Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes |
WO2009039298A2 (en) * | 2007-09-18 | 2009-03-26 | University Of Florida Research Foundation, Inc. | Sensors using aigan/gan high electron mobility transistors |
US8836351B2 (en) * | 2008-06-10 | 2014-09-16 | University Of Florida Research Foundation, Inc. | Chloride detection |
WO2010054159A2 (en) * | 2008-11-06 | 2010-05-14 | University Of Florida Research Foundation, Inc. | Materials and methods for detecting toxins, pathogens and other biological materials |
US8592745B2 (en) * | 2009-08-19 | 2013-11-26 | Luxtera Inc. | Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer |
US8891266B2 (en) * | 2012-03-13 | 2014-11-18 | International Business Machines Corporation | Monolithic high voltage multiplier having high voltage semiconductor diodes and high-k capacitors |
CN103680596B (zh) * | 2012-08-31 | 2017-05-17 | 中国科学院微电子研究所 | 半导体存储器阵列及其访问方法 |
CN110718589B (zh) * | 2018-07-12 | 2024-04-16 | 纳姆实验有限责任公司 | 具有半导体器件的电子电路的异质结构 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3448348A (en) * | 1965-03-05 | 1969-06-03 | Ford Motor Co | Transducer utilizing electrically polarizable material |
AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
US4323911A (en) * | 1978-12-14 | 1982-04-06 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetectors |
US4257055A (en) * | 1979-07-26 | 1981-03-17 | University Of Illinois Foundation | Negative resistance heterojunction devices |
DE2930584C2 (de) * | 1979-07-27 | 1982-04-29 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Halbleiterbauelement, das den Effekt der gespeicherten Photoleitung ausnutzt |
JPS5678180A (en) * | 1979-11-30 | 1981-06-26 | Hitachi Ltd | Light receiving device |
CA1145482A (en) * | 1979-12-28 | 1983-04-26 | Takashi Mimura | High electron mobility single heterojunction semiconductor device |
US4295002A (en) * | 1980-06-23 | 1981-10-13 | International Business Machines Corporation | Heterojunction V-groove multijunction solar cell |
-
1981
- 1981-03-06 JP JP56032088A patent/JPS57147284A/ja active Pending
-
1982
- 1982-03-05 EP EP82301126A patent/EP0060657B1/de not_active Expired - Lifetime
- 1982-03-05 DE DE8282301126T patent/DE3280202D1/de not_active Expired - Fee Related
-
1987
- 1987-06-29 US US07/068,820 patent/US4734750A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0060657B1 (de) | 1990-07-04 |
US4734750A (en) | 1988-03-29 |
JPS57147284A (en) | 1982-09-11 |
EP0060657A3 (en) | 1985-07-24 |
EP0060657A2 (de) | 1982-09-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |