DE3687049T2 - Bipolare eigenschaften aufweisender transistor mit heterouebergang. - Google Patents

Bipolare eigenschaften aufweisender transistor mit heterouebergang.

Info

Publication number
DE3687049T2
DE3687049T2 DE8686104696T DE3687049T DE3687049T2 DE 3687049 T2 DE3687049 T2 DE 3687049T2 DE 8686104696 T DE8686104696 T DE 8686104696T DE 3687049 T DE3687049 T DE 3687049T DE 3687049 T2 DE3687049 T2 DE 3687049T2
Authority
DE
Germany
Prior art keywords
heteroue
transistor
transition
bipolar properties
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686104696T
Other languages
English (en)
Other versions
DE3687049D1 (de
Inventor
Toshio Baba
Masaki Ogawa
Keiichi Ohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60072163A external-priority patent/JPH0714056B2/ja
Priority claimed from JP7215485A external-priority patent/JPH0620142B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3687049D1 publication Critical patent/DE3687049D1/de
Application granted granted Critical
Publication of DE3687049T2 publication Critical patent/DE3687049T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8686104696T 1985-04-05 1986-04-07 Bipolare eigenschaften aufweisender transistor mit heterouebergang. Expired - Fee Related DE3687049T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60072163A JPH0714056B2 (ja) 1985-04-05 1985-04-05 半導体装置
JP7215485A JPH0620142B2 (ja) 1985-04-05 1985-04-05 半導体装置

Publications (2)

Publication Number Publication Date
DE3687049D1 DE3687049D1 (de) 1992-12-10
DE3687049T2 true DE3687049T2 (de) 1993-03-25

Family

ID=26413279

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686104696T Expired - Fee Related DE3687049T2 (de) 1985-04-05 1986-04-07 Bipolare eigenschaften aufweisender transistor mit heterouebergang.

Country Status (3)

Country Link
US (1) US4903091A (de)
EP (1) EP0200933B1 (de)
DE (1) DE3687049T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962409A (en) * 1987-01-20 1990-10-09 International Business Machines Corporation Staggered bandgap gate field effect transistor
JPS63187668A (ja) * 1987-01-20 1988-08-03 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 電界効果トランジスタ
JP2817995B2 (ja) * 1990-03-15 1998-10-30 富士通株式会社 ▲ｉｉｉ▼―▲ｖ▼族化合物半導体ヘテロ構造基板および▲ｉｉｉ▼―▲ｖ▼族化合物ヘテロ構造半導体装置
JP2606079B2 (ja) * 1993-06-25 1997-04-30 日本電気株式会社 光半導体素子
US6365925B2 (en) * 1997-09-12 2002-04-02 Sony Corporation Semiconductor device
US6965538B1 (en) * 2004-08-03 2005-11-15 Micron Technology, Inc. Programming and evaluating through PMOS injection
JP4712459B2 (ja) * 2005-07-08 2011-06-29 パナソニック株式会社 トランジスタ及びその動作方法
JP4705481B2 (ja) * 2006-01-25 2011-06-22 パナソニック株式会社 窒化物半導体装置
CN103219375A (zh) 2006-11-20 2013-07-24 松下电器产业株式会社 半导体装置
JP6050563B2 (ja) * 2011-02-25 2016-12-21 富士通株式会社 化合物半導体装置及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
JPS57147284A (en) * 1981-03-06 1982-09-11 Fujitsu Ltd Semiconductor device
US4471367A (en) * 1981-12-04 1984-09-11 At&T Bell Laboratories MESFET Using a shallow junction gate structure on GaInAs
US4468851A (en) * 1981-12-14 1984-09-04 The United States Of America As Represented By The Secretary Of The Navy Process for making a heterojunction source-drain insulated gate field-effect transistors utilizing diffusion to form the lattice
JPS58143572A (ja) * 1982-02-22 1983-08-26 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
US4590502A (en) * 1983-03-07 1986-05-20 University Of Illinois Camel gate field effect transistor device
EP0133342B1 (de) * 1983-06-24 1989-11-29 Nec Corporation Halbleiterstruktur mit Übergitter hoher Trägerdichte
US4499481A (en) * 1983-09-14 1985-02-12 The United States Of America As Represented By The Secretary Of The Navy Heterojunction Schottky gate MESFET with lower channel ridge barrier
JPH0230182B2 (ja) * 1984-03-15 1990-07-04 Nippon Electric Co Handotaisochi
JPS613465A (ja) * 1984-06-18 1986-01-09 Fujitsu Ltd 半導体装置及びその製造方法
NL8500218A (nl) * 1985-01-28 1986-08-18 Philips Nv Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.
JPH0628273A (ja) * 1991-01-09 1994-02-04 Nec Corp 入力電文振分方式

Also Published As

Publication number Publication date
EP0200933A1 (de) 1986-11-12
DE3687049D1 (de) 1992-12-10
EP0200933B1 (de) 1992-11-04
US4903091A (en) 1990-02-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee