DE3786363D1 - Halbleiteranordnungen mit hoher beweglichkeit. - Google Patents

Halbleiteranordnungen mit hoher beweglichkeit.

Info

Publication number
DE3786363D1
DE3786363D1 DE8787200641T DE3786363T DE3786363D1 DE 3786363 D1 DE3786363 D1 DE 3786363D1 DE 8787200641 T DE8787200641 T DE 8787200641T DE 3786363 T DE3786363 T DE 3786363T DE 3786363 D1 DE3786363 D1 DE 3786363D1
Authority
DE
Germany
Prior art keywords
high mobility
semiconductor arrangements
arrangements
semiconductor
mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787200641T
Other languages
English (en)
Other versions
DE3786363T2 (de
Inventor
Hugh Ivor Ralph
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3786363D1 publication Critical patent/DE3786363D1/de
Application granted granted Critical
Publication of DE3786363T2 publication Critical patent/DE3786363T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
DE87200641T 1986-04-16 1987-04-06 Halbleiteranordnungen mit hoher Beweglichkeit. Expired - Fee Related DE3786363T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08609337A GB2189345A (en) 1986-04-16 1986-04-16 High mobility p channel semi conductor devices

Publications (2)

Publication Number Publication Date
DE3786363D1 true DE3786363D1 (de) 1993-08-05
DE3786363T2 DE3786363T2 (de) 1994-01-13

Family

ID=10596328

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87200641T Expired - Fee Related DE3786363T2 (de) 1986-04-16 1987-04-06 Halbleiteranordnungen mit hoher Beweglichkeit.

Country Status (5)

Country Link
US (1) US4862228A (de)
EP (1) EP0241988B1 (de)
JP (1) JP2537852B2 (de)
DE (1) DE3786363T2 (de)
GB (1) GB2189345A (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4899201A (en) * 1987-08-14 1990-02-06 Regents Of The University Of Minnesota Electronic and optoelectric devices utilizing light hole properties
WO1989001704A1 (en) * 1987-08-14 1989-02-23 Regents Of The University Of Minnesota Electronic and optoelectronic devices utilizing light hole properties
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor
US4952792A (en) * 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells
US4999485A (en) * 1989-10-18 1991-03-12 At&T Bell Laboratories Nonlinerar optical device structure with compound semiconductor having graded chemical composition
US5161235A (en) * 1990-02-20 1992-11-03 University Of Virginia Alumni Patents Foundation Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold
JP2557546B2 (ja) * 1990-03-30 1996-11-27 三菱電機株式会社 半導体装置の製造方法
US5172197A (en) * 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5055891A (en) * 1990-05-31 1991-10-08 Hewlett-Packard Company Heterostructure transistor using real-space electron transfer
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor
US5060031A (en) * 1990-09-18 1991-10-22 Motorola, Inc Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices
GB2248967A (en) * 1990-10-19 1992-04-22 Philips Electronic Associated A high mobility semiconductor device
US5841552A (en) * 1991-04-19 1998-11-24 Canon Kabushiki Kaisha Image processed apparatus for processing images having different resolutions
FR2694132B1 (fr) * 1992-07-21 1994-10-14 Picogiga Sa Transistor à effet de champ à canal p à puits quantique, et circuit intégré à transistors complémentaires.
FR2686455A1 (fr) * 1992-01-22 1993-07-23 Picogiga Sa Transistor a effet de champ a canal p a heterojonction, et circuit integre a transistors complementaires.
WO1993015523A1 (fr) * 1992-01-22 1993-08-05 Picogiga Sa Transistor a effet de champ a canal p a puits quantique, et circuit integre a transistors complementaires
US5488237A (en) * 1992-02-14 1996-01-30 Sumitomo Electric Industries, Ltd. Semiconductor device with delta-doped layer in channel region
JP2003532898A (ja) * 2000-05-05 2003-11-05 バイエル アクチェンゲゼルシャフト 生体標識としてのドープ処理されたナノ粒子
JP2003197906A (ja) * 2001-12-28 2003-07-11 Fujitsu Ltd 半導体装置および相補型半導体装置
JP3661061B2 (ja) * 2002-10-09 2005-06-15 松下電器産業株式会社 プラズマ振動スイッチング素子
GB0326993D0 (en) * 2003-11-20 2003-12-24 Qinetiq Ltd Strained semiconductor devices
DE102004036971B4 (de) * 2004-07-30 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Technik zur Bewertung lokaler elektrischer Eigenschaften in Halbleiterbauelementen
US7826506B2 (en) * 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
CN101432936B (zh) * 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US8815617B2 (en) * 2004-10-01 2014-08-26 Finisar Corporation Passivation of VCSEL sidewalls
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7902571B2 (en) * 2005-08-04 2011-03-08 Hitachi Cable, Ltd. III-V group compound semiconductor device including a buffer layer having III-V group compound semiconductor crystal
US8541773B2 (en) 2011-05-02 2013-09-24 Intel Corporation Vertical tunneling negative differential resistance devices
EP3050114A4 (de) * 2013-09-27 2017-05-03 Intel Corporation Verfahren zur erzielung einer hohen mobilität in umhüllten iii-v-kanalmaterialien
US9406566B1 (en) * 2015-12-04 2016-08-02 International Business Machines Corporation Integration of III-V compound materials on silicon

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
JPS58147167A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 高移動度相補型半導体装置
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
JPS6012775A (ja) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol 電界効果トランジスタ
JPH0654784B2 (ja) * 1984-06-11 1994-07-20 沖電気工業株式会社 半導体装置
JPS60263471A (ja) * 1984-06-11 1985-12-26 Oki Electric Ind Co Ltd 半導体装置
JPH07120790B2 (ja) * 1984-06-18 1995-12-20 株式会社日立製作所 半導体装置
US4665415A (en) * 1985-04-24 1987-05-12 International Business Machines Corporation Semiconductor device with hole conduction via strained lattice

Also Published As

Publication number Publication date
US4862228A (en) 1989-08-29
EP0241988B1 (de) 1993-06-30
EP0241988A3 (en) 1988-03-02
EP0241988A2 (de) 1987-10-21
GB8609337D0 (en) 1986-05-21
JP2537852B2 (ja) 1996-09-25
DE3786363T2 (de) 1994-01-13
JPS62245682A (ja) 1987-10-26
GB2189345A (en) 1987-10-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee