IT7919985A0 - Dispositivo semiconduttore. - Google Patents

Dispositivo semiconduttore.

Info

Publication number
IT7919985A0
IT7919985A0 IT7919985A IT1998579A IT7919985A0 IT 7919985 A0 IT7919985 A0 IT 7919985A0 IT 7919985 A IT7919985 A IT 7919985A IT 1998579 A IT1998579 A IT 1998579A IT 7919985 A0 IT7919985 A0 IT 7919985A0
Authority
IT
Italy
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
IT7919985A
Other languages
English (en)
Other versions
IT1110956B (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7919985A0 publication Critical patent/IT7919985A0/it
Application granted granted Critical
Publication of IT1110956B publication Critical patent/IT1110956B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
IT19985/79A 1978-02-10 1979-02-07 Dispositivo semiconduttore IT1110956B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7801532A NL7801532A (nl) 1978-02-10 1978-02-10 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
IT7919985A0 true IT7919985A0 (it) 1979-02-07
IT1110956B IT1110956B (it) 1986-01-13

Family

ID=19830307

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19985/79A IT1110956B (it) 1978-02-10 1979-02-07 Dispositivo semiconduttore

Country Status (8)

Country Link
US (1) US4254427A (it)
JP (1) JPS54114987A (it)
AU (1) AU4405179A (it)
DE (1) DE2904254A1 (it)
FR (1) FR2417164A1 (it)
GB (1) GB2014362B (it)
IT (1) IT1110956B (it)
NL (1) NL7801532A (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4373165A (en) * 1979-11-07 1983-02-08 Texas Instruments Incorporated Very high density punch-through read-only-memory
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
NL8103376A (nl) * 1981-07-16 1983-02-16 Philips Nv Weergeefinrichting.
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
DE3502713A1 (de) * 1985-01-28 1986-07-31 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte schaltung mit untertunnelung
US5661047A (en) * 1994-10-05 1997-08-26 United Microelectronics Corporation Method for forming bipolar ROM device
JP2008503085A (ja) * 2004-06-16 2008-01-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電気デバイスおよびその製造方法
US9842184B2 (en) * 2015-09-11 2017-12-12 Globalfoundries Inc. Method, apparatus and system for using hybrid library track design for SOI technology

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1276791A (en) * 1969-01-22 1972-06-07 Tokyo Shibaura Electric Co Semiconductor device
US4163985A (en) * 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel

Also Published As

Publication number Publication date
DE2904254A1 (de) 1979-08-16
FR2417164B1 (it) 1983-03-11
GB2014362A (en) 1979-08-22
FR2417164A1 (fr) 1979-09-07
US4254427A (en) 1981-03-03
AU4405179A (en) 1979-08-16
NL7801532A (nl) 1979-08-14
JPS54114987A (en) 1979-09-07
IT1110956B (it) 1986-01-13
GB2014362B (en) 1982-02-24

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