DE3177237D1 - Statische halbleiterspeicheranlage. - Google Patents
Statische halbleiterspeicheranlage.Info
- Publication number
- DE3177237D1 DE3177237D1 DE8181304710T DE3177237T DE3177237D1 DE 3177237 D1 DE3177237 D1 DE 3177237D1 DE 8181304710 T DE8181304710 T DE 8181304710T DE 3177237 T DE3177237 T DE 3177237T DE 3177237 D1 DE3177237 D1 DE 3177237D1
- Authority
- DE
- Germany
- Prior art keywords
- storage system
- semiconductor storage
- static semiconductor
- static
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55141655A JPS5766587A (en) | 1980-10-09 | 1980-10-09 | Static semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3177237D1 true DE3177237D1 (de) | 1991-02-07 |
Family
ID=15297088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181304710T Expired - Lifetime DE3177237D1 (de) | 1980-10-09 | 1981-10-09 | Statische halbleiterspeicheranlage. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4482984A (de) |
EP (1) | EP0050022B1 (de) |
JP (1) | JPS5766587A (de) |
DE (1) | DE3177237D1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58139399A (ja) * | 1982-02-15 | 1983-08-18 | Hitachi Ltd | 半導体記憶装置 |
FR2528613B1 (fr) * | 1982-06-09 | 1991-09-20 | Hitachi Ltd | Memoire a semi-conducteurs |
JPS58218096A (ja) * | 1982-06-14 | 1983-12-19 | Nec Corp | 半導体記憶装置 |
US4618945A (en) * | 1982-08-11 | 1986-10-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
JPS5994296A (ja) * | 1982-11-19 | 1984-05-30 | Toshiba Corp | 半導体記憶装置 |
JPS5945688A (ja) * | 1982-09-09 | 1984-03-14 | Nec Corp | 半導体記憶回路 |
JPS5972699A (ja) * | 1982-10-18 | 1984-04-24 | Mitsubishi Electric Corp | 半導体メモリ装置 |
DE3348201C2 (en) * | 1982-10-18 | 1988-12-22 | Mitsubishi Denki K.K., Tokio/Tokyo, Jp | Semiconductor memory device |
JPS5972698A (ja) * | 1982-10-18 | 1984-04-24 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPS59157884A (ja) * | 1983-02-25 | 1984-09-07 | Nec Corp | 半導体メモリ装置 |
DE3380678D1 (en) * | 1983-05-25 | 1989-11-09 | Ibm Deutschland | Semiconductor memory |
JPS6050797A (ja) * | 1983-08-31 | 1985-03-20 | Toshiba Corp | 半導体記憶装置 |
JPS6059588A (ja) * | 1983-09-12 | 1985-04-05 | Hitachi Ltd | 半導体記憶装置 |
DE3582376D1 (de) * | 1984-08-03 | 1991-05-08 | Toshiba Kawasaki Kk | Halbleiterspeicheranordnung. |
JPS6143362A (ja) * | 1984-08-07 | 1986-03-01 | Nec Corp | 集積回路装置 |
NL8500434A (nl) * | 1985-02-15 | 1986-09-01 | Philips Nv | Geintegreerde geheugenschakeling met blokselektie. |
US4698788A (en) * | 1985-07-01 | 1987-10-06 | Motorola, Inc. | Memory architecture with sub-arrays |
US4658381A (en) * | 1985-08-05 | 1987-04-14 | Motorola, Inc. | Bit line precharge on a column address change |
JPH0778993B2 (ja) * | 1985-11-05 | 1995-08-23 | 株式会社日立製作所 | 半導体メモリ |
US4775942A (en) * | 1985-12-09 | 1988-10-04 | International Business Machines Corporation | Seed and stitch approach to embedded arrays |
JPS62149096A (ja) * | 1986-12-12 | 1987-07-03 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPS62149097A (ja) * | 1986-12-12 | 1987-07-03 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPS62183095A (ja) * | 1986-12-24 | 1987-08-11 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPS62183094A (ja) * | 1986-12-24 | 1987-08-11 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US4797858A (en) * | 1987-03-30 | 1989-01-10 | Motorola, Inc. | Semiconductor memory with divided word lines and shared sense amplifiers |
US4845677A (en) * | 1987-08-17 | 1989-07-04 | International Business Machines Corporation | Pipelined memory chip structure having improved cycle time |
JPH01179292A (ja) * | 1987-12-29 | 1989-07-17 | Nec Corp | 半導体記憶装置 |
IT1225638B (it) * | 1988-12-28 | 1990-11-22 | Sgs Thomson Microelectronics | Dispositivo logico integrato come una rete di maglie di memorie distribuite |
US5457647A (en) * | 1993-03-31 | 1995-10-10 | Sgs-Thomson Microelectronics, Inc. | Passive hierarchical bitline memory architecture which resides in metal layers of a SRAM array |
JPH08203275A (ja) * | 1995-01-28 | 1996-08-09 | Sony Corp | 遅延用メモリic |
US5880999A (en) * | 1997-06-27 | 1999-03-09 | Cypress Semiconductor Corporation | Read only/random access memory architecture and methods for operating same |
US6016277A (en) * | 1997-06-27 | 2000-01-18 | Cypress Semiconductor Corporation | Reference voltage generator for reading a ROM cell in an integrated RAM/ROM memory device |
US5822268A (en) * | 1997-09-11 | 1998-10-13 | International Business Machines Corporation | Hierarchical column select line architecture for multi-bank DRAMs |
US5949732A (en) * | 1997-09-11 | 1999-09-07 | International Business Machines Corporation | Method of structuring a multi-bank DRAM into a hierarchical column select line architecture |
US6091620A (en) * | 1999-07-06 | 2000-07-18 | Virage Logic Corporation | Multi-bank memory with word-line banking, bit-line banking and I/O multiplexing utilizing tilable interconnects |
DE10201179B4 (de) * | 2002-01-15 | 2004-02-19 | Infineon Technologies Ag | Digitale Speicherschaltung mit mehreren Speicherbänken |
US6580635B1 (en) * | 2002-04-25 | 2003-06-17 | Hewlett-Packard Development Company, L.P. | Bitline splitter |
KR100761755B1 (ko) * | 2005-02-28 | 2007-09-28 | 삼성전자주식회사 | 입출력 비트구조를 조절할 수 있는 반도체 메모리 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3402398A (en) * | 1964-08-31 | 1968-09-17 | Bunker Ramo | Plural content addressed memories with a common sensing circuit |
US3284782A (en) * | 1966-02-16 | 1966-11-08 | Rca Corp | Memory storage system |
US3560940A (en) * | 1968-07-15 | 1971-02-02 | Ibm | Time shared interconnection apparatus |
US3753242A (en) * | 1971-12-16 | 1973-08-14 | Honeywell Inf Systems | Memory overlay system |
JPS5258327A (en) * | 1975-11-08 | 1977-05-13 | Hitachi Ltd | Semiconductor memory unit |
US4096584A (en) * | 1977-01-31 | 1978-06-20 | Intel Corporation | Low power/high speed static ram |
DE2852985C2 (de) * | 1978-12-07 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren für die Ansteuerung eines Speichers, insbesondere in Fernsprechvermittlungsanlagen |
-
1980
- 1980-10-09 JP JP55141655A patent/JPS5766587A/ja active Granted
-
1981
- 1981-10-07 US US06/309,437 patent/US4482984A/en not_active Expired - Lifetime
- 1981-10-09 EP EP81304710A patent/EP0050022B1/de not_active Expired - Lifetime
- 1981-10-09 DE DE8181304710T patent/DE3177237D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5766587A (en) | 1982-04-22 |
EP0050022A2 (de) | 1982-04-21 |
EP0050022B1 (de) | 1991-01-02 |
JPH0135437B2 (de) | 1989-07-25 |
EP0050022A3 (en) | 1984-03-28 |
US4482984A (en) | 1984-11-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |