DE112005001828T5 - Planarisieren einer Halbleiterstruktur zum Ausbilden von Austauschmetallgates - Google Patents
Planarisieren einer Halbleiterstruktur zum Ausbilden von Austauschmetallgates Download PDFInfo
- Publication number
- DE112005001828T5 DE112005001828T5 DE112005001828T DE112005001828T DE112005001828T5 DE 112005001828 T5 DE112005001828 T5 DE 112005001828T5 DE 112005001828 T DE112005001828 T DE 112005001828T DE 112005001828 T DE112005001828 T DE 112005001828T DE 112005001828 T5 DE112005001828 T5 DE 112005001828T5
- Authority
- DE
- Germany
- Prior art keywords
- planarizing
- semiconductor structure
- metal gates
- exchange metal
- form exchange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/900,582 US7138323B2 (en) | 2004-07-28 | 2004-07-28 | Planarizing a semiconductor structure to form replacement metal gates |
US10/900,582 | 2004-07-28 | ||
PCT/US2005/025339 WO2006020158A2 (en) | 2004-07-28 | 2005-07-14 | Planarizing a semiconductor structure to form replacement metal gates |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112005001828T5 true DE112005001828T5 (de) | 2007-05-16 |
DE112005001828B4 DE112005001828B4 (de) | 2010-04-08 |
Family
ID=35519834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112005001828T Active DE112005001828B4 (de) | 2004-07-28 | 2005-07-14 | Verfahren zum Herstellen von Halbleiterbauelementen mit planarisieren einer Halbleiterstruktur zum Ausbilden von Austauschmetallgates sowie entsprechende Halbleiterstruktur |
Country Status (8)
Country | Link |
---|---|
US (2) | US7138323B2 (de) |
JP (1) | JP5154222B2 (de) |
KR (1) | KR100865885B1 (de) |
CN (1) | CN101027761B (de) |
DE (1) | DE112005001828B4 (de) |
GB (1) | GB2442996B (de) |
TW (1) | TWI277137B (de) |
WO (1) | WO2006020158A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102008046862B4 (de) * | 2007-09-14 | 2011-05-05 | Infineon Technologies Ag | Halbleiterstruktur mit Halbleiterchip und mit Induktionsspule und Verfahren zum Ausbilden einer solchen |
Families Citing this family (65)
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US7256349B2 (en) * | 2004-08-11 | 2007-08-14 | 3M Innovative Properties Company | Telecommunications cable enclosure |
US7338907B2 (en) * | 2004-10-04 | 2008-03-04 | Sharp Laboratories Of America, Inc. | Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications |
DE102004052617B4 (de) * | 2004-10-29 | 2010-08-05 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement mit Halbleitergebieten, die unterschiedlich verformte Kanalgebiete aufweisen |
JP5380827B2 (ja) | 2006-12-11 | 2014-01-08 | ソニー株式会社 | 半導体装置の製造方法 |
US7572704B2 (en) * | 2006-12-27 | 2009-08-11 | Hynix Semiconductor Inc. | Method for forming metal pattern and method for forming gate electrode in semiconductor device using the same |
JP2008198935A (ja) | 2007-02-15 | 2008-08-28 | Sony Corp | 絶縁ゲート電界効果トランジスタの製造方法。 |
US7781288B2 (en) * | 2007-02-21 | 2010-08-24 | International Business Machines Corporation | Semiconductor structure including gate electrode having laterally variable work function |
US7820552B2 (en) * | 2007-03-13 | 2010-10-26 | International Business Machines Corporation | Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack |
DE102007041207B4 (de) * | 2007-08-31 | 2015-05-21 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | CMOS-Bauelement mit Gateisolationsschichten mit unterschiedlicher Art und Dicke und Verfahren zur Herstellung |
US7986023B2 (en) * | 2007-09-17 | 2011-07-26 | Infineon Technologies Ag | Semiconductor device with inductor |
US8264048B2 (en) * | 2008-02-15 | 2012-09-11 | Intel Corporation | Multi-gate device having a T-shaped gate structure |
US7790559B2 (en) * | 2008-02-27 | 2010-09-07 | International Business Machines Corporation | Semiconductor transistors having high-K gate dielectric layers and metal gate electrodes |
US7955964B2 (en) * | 2008-05-14 | 2011-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dishing-free gap-filling with multiple CMPs |
US8524588B2 (en) | 2008-08-18 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process |
US8237227B2 (en) | 2008-08-29 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy gate structure for gate last process |
JP4744576B2 (ja) * | 2008-09-10 | 2011-08-10 | パナソニック株式会社 | 半導体装置の製造方法 |
US8163655B2 (en) * | 2008-09-15 | 2012-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a sacrificial sandwich structure |
US7977181B2 (en) * | 2008-10-06 | 2011-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for gate height control in a gate last process |
US8093116B2 (en) * | 2008-10-06 | 2012-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for N/P patterning in a gate last process |
JP2010129978A (ja) * | 2008-12-01 | 2010-06-10 | Rohm Co Ltd | 半導体装置の製造方法 |
US7838356B2 (en) * | 2008-12-31 | 2010-11-23 | Texas Instruments Incorporated | Gate dielectric first replacement gate processes and integrated circuits therefrom |
DE102009006802B3 (de) * | 2009-01-30 | 2010-06-17 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und Halbleiterbauelement mit Einstellung der Austrittsarbeit in einer Gateelektrodenstruktur mit großem ε nach der Transistorherstellung unter Anwendung von Lanthanum |
US7915127B2 (en) * | 2009-07-27 | 2011-03-29 | United Microelectronics Corp. | Manufacturing method of semiconductor device |
KR101634748B1 (ko) * | 2009-12-08 | 2016-07-11 | 삼성전자주식회사 | 트랜지스터의 제조방법 및 그를 이용한 집적 회로의 형성방법 |
US8048810B2 (en) * | 2010-01-29 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for metal gate N/P patterning |
KR101574107B1 (ko) * | 2010-02-11 | 2015-12-04 | 삼성전자 주식회사 | 반도체 장치의 제조 방법 |
DE102010003451B4 (de) | 2010-03-30 | 2013-12-24 | Globalfoundries Dresden Module One Llc & Co. Kg | Austauschgateverfahren für Metallgatestapel mit großem ε durch Vermeiden eines Polierprozesses zum Freilegen des Platzhaltermaterials |
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US8211775B1 (en) | 2011-03-09 | 2012-07-03 | United Microelectronics Corp. | Method of making transistor having metal gate |
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US8802524B2 (en) | 2011-03-22 | 2014-08-12 | United Microelectronics Corp. | Method of manufacturing semiconductor device having metal gates |
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CN102800576B (zh) * | 2011-05-26 | 2015-09-02 | 中芯国际集成电路制造(上海)有限公司 | 图形化膜层的方法、形成栅极、mos晶体管的方法 |
US8765561B2 (en) | 2011-06-06 | 2014-07-01 | United Microelectronics Corp. | Method for fabricating semiconductor device |
US8486790B2 (en) | 2011-07-18 | 2013-07-16 | United Microelectronics Corp. | Manufacturing method for metal gate |
US8921944B2 (en) | 2011-07-19 | 2014-12-30 | United Microelectronics Corp. | Semiconductor device |
US9070784B2 (en) * | 2011-07-22 | 2015-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate structure of a CMOS semiconductor device and method of forming the same |
US8647941B2 (en) | 2011-08-17 | 2014-02-11 | United Microelectronics Corp. | Method of forming semiconductor device |
US8691659B2 (en) | 2011-10-26 | 2014-04-08 | United Microelectronics Corp. | Method for forming void-free dielectric layer |
US20130181265A1 (en) | 2012-01-18 | 2013-07-18 | Globalfoundries Inc. | Methods of Forming a Gate Cap Layer Above a Replacement Gate Structure and a Semiconductor Device That Includes Such a Gate Structure and Cap Layer |
US8835243B2 (en) | 2012-05-04 | 2014-09-16 | United Microelectronics Corp. | Semiconductor process |
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US8951876B2 (en) | 2012-06-20 | 2015-02-10 | United Microelectronics Corp. | Semiconductor device and manufacturing method thereof |
CN103681498B (zh) * | 2012-09-12 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
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2004
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- 2005-07-14 CN CN200580025244.4A patent/CN101027761B/zh active Active
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DE102008046862B4 (de) * | 2007-09-14 | 2011-05-05 | Infineon Technologies Ag | Halbleiterstruktur mit Halbleiterchip und mit Induktionsspule und Verfahren zum Ausbilden einer solchen |
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KR20070032807A (ko) | 2007-03-22 |
GB2442996B (en) | 2009-04-01 |
CN101027761B (zh) | 2013-02-06 |
WO2006020158A2 (en) | 2006-02-23 |
KR100865885B1 (ko) | 2008-10-29 |
TWI277137B (en) | 2007-03-21 |
WO2006020158A3 (en) | 2006-10-12 |
GB0700528D0 (en) | 2007-02-21 |
US20070037372A1 (en) | 2007-02-15 |
DE112005001828B4 (de) | 2010-04-08 |
TW200608471A (en) | 2006-03-01 |
US7138323B2 (en) | 2006-11-21 |
CN101027761A (zh) | 2007-08-29 |
JP2008507856A (ja) | 2008-03-13 |
US20060022277A1 (en) | 2006-02-02 |
GB2442996A (en) | 2008-04-23 |
JP5154222B2 (ja) | 2013-02-27 |
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