JP4744576B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4744576B2 JP4744576B2 JP2008232571A JP2008232571A JP4744576B2 JP 4744576 B2 JP4744576 B2 JP 4744576B2 JP 2008232571 A JP2008232571 A JP 2008232571A JP 2008232571 A JP2008232571 A JP 2008232571A JP 4744576 B2 JP4744576 B2 JP 4744576B2
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- insulating film
- film
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 122
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 125000006850 spacer group Chemical group 0.000 claims description 111
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 76
- 229910021332 silicide Inorganic materials 0.000 claims description 56
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 239000011229 interlayer Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 description 27
- 238000002513 implantation Methods 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910003447 praseodymium oxide Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
10x 半導体領域
11 p型ウェル領域
12a 下地絶縁膜
12 下地ゲート絶縁膜
13a 高誘電率絶縁膜
13 高誘電率ゲート絶縁膜
13A ゲート絶縁膜
14a 金属膜
14 第1導電膜
15a シリコン膜
15 第2導電膜
15A ゲート電極
16a 第1の絶縁膜
16 内側オフセットスペーサ
17a 第2の絶縁膜
17 外側オフセットスペーサ
17A オフセットスペーサ
18a n型エクステンション注入領域
18 n型エクステンション領域
19 内側サイドウォール
20 外側サイドウォール
20A サイドウォール
21a n型ソースドレイン注入領域
21 n型ソースドレイン領域
22 第1の金属シリサイド膜
23 第2の金属シリサイド膜
24 絶縁膜
25 層間絶縁膜
26 コンタクトホール
27 バリアメタル膜
28 導電膜
28A コンタクトプラグ
29 配線
36 コンタクトホール
37 バリアメタル膜
38 導電膜
38A コンタクトプラグ
Claims (11)
- 第1導電型の半導体領域上にゲート絶縁膜を形成する工程(a)と、
前記ゲート絶縁膜上にゲート電極を形成する工程(b)と、
前記ゲート電極の側面上に、内側オフセットスペーサ及び外側オフセットスペーサからなるオフセットスペーサを形成する工程(c)と、
前記ゲート電極の側面上に、前記オフセットスペーサを介して、断面形状がL字状の内側サイドウォール、及び外側サイドウォールからなるサイドウォールを形成する工程(d)と、
前記半導体領域における前記サイドウォールの外側方下に位置する領域に第2導電型のソースドレイン領域を形成する工程(e)と、
前記工程(e)の後で、前記外側サイドウォールを除去して、前記内側サイドウォールを残存させる工程(f)と、
前記工程(f)の後で、前記ゲート電極上にだけ第1の金属シリサイド膜を形成すると共に、前記ソースドレイン領域上に第2の金属シリサイド膜を形成する工程(g)と、
前記ゲート電極、前記オフセットスペーサ、前記内側サイドウォール、及び前記半導体領域における前記内側サイドウォールの外側方に位置する領域を覆うように絶縁膜を形成する工程(h)と、
前記工程(h)の後で、前記絶縁膜上に層間絶縁膜を形成する工程(i)と、
前記絶縁膜及び前記層間絶縁膜に、前記第2の金属シリサイド膜と接続するコンタクトプラグを形成する工程(j)とを備え、
前記工程(c)は、前記ゲート電極の側面上に、上端の高さが前記ゲート電極の上面の高さよりも低い前記内側オフセットスペーサを形成する工程(c1)と、前記ゲート電極の側面上に、前記内側オフセットスペーサを覆うように前記外側オフセットスペーサを形成する工程(c2)とを有し、
前記工程(c2)において、前記外側オフセットスペーサは、前記内側オフセットスペーサの上端及び外側面に接すると共に、その上端が前記ゲート電極の上面と同等の高さまで形成され、
前記外側オフセットスペーサは、前記外側サイドウォールとは異なる材料で形成されており、
前記内側オフセットスペーサと前記外側サイドウォールとは同じ材料で形成されていることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記工程(h)において、前記絶縁膜は、前記内側サイドウォールの表面に接して形成されることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記内側オフセットスペーサ及び前記外側サイドウォールは、シリコン窒化膜からなることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記外側オフセットスペーサは、シリコン酸化膜からなり、
前記外側サイドウォールは、シリコン窒化膜からなることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記内側オフセットスペーサは、シリコン窒化膜からなり、
前記外側オフセットスペーサは、シリコン酸化膜からなることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記絶縁膜は、前記半導体領域における前記ゲート電極の下方に位置するチャネル領域のゲート長方向に応力を生じさせる応力絶縁膜であることを特徴とする半導体装置の製造方法。 - 請求項6に記載の半導体装置の製造方法において、
前記第1導電型は、p型であり、
前記第2導電型は、n型であり、
前記応力は、引っ張り応力であることを特徴とする半導体装置の製造方法。 - 請求項6に記載の半導体装置の製造方法において、
前記第1導電型は、n型であり、
前記第2導電型は、p型であり、
前記応力は、圧縮応力であることを特徴とする半導体装置の製造方法。 - 請求項1〜8のうちいずれか1項に記載の半導体装置の製造方法において、
前記絶縁膜は、シリコン窒化膜からなることを特徴とする半導体装置の製造方法。 - 請求項1〜9のうちいずれか1項に記載の半導体装置の製造方法において、
前記ゲート絶縁膜は、前記半導体領域上に形成された下地絶縁膜からなる下地ゲート絶縁膜と、前記下地ゲート絶縁膜上に形成された高誘電率絶縁膜からなる高誘電率ゲート絶縁膜とを有していることを特徴とする半導体装置の製造方法。 - 請求項1〜10のうちいずれか1項に記載の半導体装置の製造方法において、
前記ゲート電極は、前記ゲート絶縁膜上に形成された金属膜からなる第1導電膜と、前記第1導電膜上に形成されたシリコン膜からなる第2導電膜とを有していることを特徴とする半導体装置の製造方法。
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US9887130B2 (en) * | 2016-01-29 | 2018-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET device and method of forming the same |
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