CN202420685U - Optical read-out heat-mechanical infrared detector structure - Google Patents
Optical read-out heat-mechanical infrared detector structure Download PDFInfo
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- CN202420685U CN202420685U CN2012200037197U CN201220003719U CN202420685U CN 202420685 U CN202420685 U CN 202420685U CN 2012200037197 U CN2012200037197 U CN 2012200037197U CN 201220003719 U CN201220003719 U CN 201220003719U CN 202420685 U CN202420685 U CN 202420685U
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Abstract
The utility model discloses an optical read-out heat-mechanical infrared detector structure comprising a plurality of pixel elements which are distributed in an array; and each pixel unit comprises a substrate, a support layer, an infrared absorption layer, a reflector and a double-material suspension beam. The infrared detector structure not only inherits the advantages of a focal plane array (FPA) with the substrate and an all-hollow FPA but also overcomes the disadvantages of the FPA with the substrate and the all-hollow FPA. Compared with the FPA in a substrate structure, the infrared absorption efficiency is improved by the structure; and compared with the all-hollow FPA, the temperature uniformity of a film area is improved by the structure, so that each pixel can work independently, and the thermal response rate is improved; meanwhile, all pixels are manufactured on the support layer without any extra support frame, so that the dutyfactor is improved; and in addition, due to the design of the deformation suspension beam structure in an up-and-down overlaid way, not only is the temperature response sensitivity improved but also an optical filling factor is improved, and the development of the pixels toward the direction of smaller sizes is facilitated.
Description
Technical field
The utility model relates to a kind of optics and reads heat-mechanical type infrared detector structure.
Background technology
Infrared technique is widely used in every profession and trades such as industry, agricultural, medical treatment, science, and infrared imaging, infrared measurement of temperature, infrared treatment, infrared detection, infrared alarm, infrared remote sensing, Infrared Heating etc. are the advanced technologies that every profession and trade falls over each other to select for use.In the military affairs, infrared imaging, infrared reconnaissance, infrared tracking, infrared guidance, infrared early warning, infrared counteraction etc. be absolutely necessary in war and the future war in modern times tactics and strategic means.
Infrared eye is to be used for sightless infrared radiation is converted into visible image.According to the difference of detection principle, can Conventional detectors be divided into two big types: photoelectric type infrared eye and pattern of fever infrared eye.The photoelectric type infrared eye has fast, characteristics such as NETD is low of response time, militarily is used widely.But need photoelectron be separated with thermoelectron during owing to its work, therefore need refrigeration (being operated in liquid nitrogen (77K) environment) equipment, cause this kind infrared eye volume big, power consumption is high, costs an arm and a leg, and has limited it and has developed to civilian direction.In recent years the non-refrigerated infrared detector commercialization gradually that utilizes infrared radiation to have these characteristics of remarkable thermal effect and grow up typically has thermal resistance type, thermoelectric pile type and thermoelectric type infrared eye.This type of detector is made flexibly, need not refrigeration, and power consumption is little, and cost is low, is applied to each field gradually.But this type of detector all adopts the mode of electrical readout, because detectable signal is less, therefore the design to sensing circuit proposes very high request, has also increased the manufacture craft difficulty of entire chip simultaneously.The heat that produced of sensing circuit power consumption has also influenced the response of detector in addition.Along with the development of MEMS technology, light-mechanical type non-refrigerated infrared detector becomes the research focus in recent years.Such probe designs is flexible, and manufacture craft is simple, and the signal playback mode adopts contactless light playback mode, reduces power consumption greatly, and the NETD of such detector of theoretical prediction simultaneously can reach 5mK, has very wide application prospect.Consider the heat insulating construction design, such detector can be divided into the FPA structure of infrared FPA that be the basis with the sacrifice layer release tech, the belt material bottom structure (focal plane array) and the full hollow out in the linerless end usually.FPA at the bottom of the belt material can in time arrive substrate with heat transferred, and thermal imaging speed is improved, but because the existence of substrate; There is about 40% infrared radiation to be absorbed and reflection by substrate; Reduced infrared absorption efficient, in addition, sacrificial layer release process is complicated; Regular meeting causes structural sheet and the adhesion that sinks to the bottom, and causes pixel to lose efficacy.And the infrared FPA of the full hollow out in the linerless end, though improved infrared absorption efficient, because the characteristics of its full hollow out; The energy of pixel can not in time pass and lose, and causes that heat transmits mutually between each pixel, and each pixel can not work alone; Hot crosstalk phenomenon is serious; The thermal imaging response time is long, and dwindling its performance impact of while device size is huge, has limited pixel dimension and has dwindled.
Summary of the invention
In order to overcome above-mentioned defective, the utility model provides a kind of optics to read heat-mechanical type infrared detector structure, and this infrared detector structure has not only been inherited the advantage of FPA and full hollow out FPA at the bottom of the above-mentioned belt material, has also overcome the shortcoming that they exist simultaneously.This structure has improved infrared absorption efficient than the FPA of belt material bottom structure; Full hollow out FPA has improved the temperature homogeneity in film zone; Make can work alone between each pixel, promoted thermal response rates, each pixel is produced on the supporting layer simultaneously; Need not extra support frame, dutycycle is improved; Design of superposing type distortion cantilever beam structure not only improves temperature-responsive sensitivity about it in addition, and has improved the optical filling factor, more helps pixel and develops to the smaller szie direction.
The utility model for the technical scheme that solves its technical matters and adopt is: a kind of optics is read heat-mechanical type infrared detector structure; Comprise that several are the pixel unit of array distribution; Said each pixel unit comprises: substrate, supporting layer, infrared absorption layer, reflector and two Material Cantilever Beam; Said supporting layer is positioned on the upper side of said substrate, and the downside center of said substrate is half Openworks shape; Said infrared absorption layer is positioned at the upper side top of said supporting layer at interval, and said reflector is positioned on the said infrared absorption layer upper side; Said pair of Material Cantilever Beam is two, and parallel interval is symmetrically set on the said supporting layer upper side; Said each two Material Cantilever Beam comprise the entablature and the sill of parallel interval setting up and down; Said sill is made up of first non-metallic layer and the first metal layer; Said the first metal layer is positioned on the first non-metallic layer upper side, and downside one end of first non-metallic layer of this sill is connected to form one to extending below with said supporting layer; Said entablature is made up of second non-metallic layer and second metal level; Said second non-metallic layer is positioned on the said second metal level upper side, and the other end of second non-metallic layer of this entablature axially is connected to form one with the other end of the downward extension respectively in the other end of second metal level with said first non-metallic layer along it; Second the end on nonmetal of the entablature of said two two Material Cantilever Beam extends in opposite directions with said infrared absorption layer and is connected to form one in the plane parallel with supporting surface, edge respectively.
As the further improvement of the utility model, said supporting layer, first non-metallic layer, second non-metallic layer and infrared absorption layer are respectively one of silicon oxide layer and silicon nitride layer.
As the further improvement of the utility model, said the first metal layer, second metal level and reflector layer are respectively one of aluminium lamination and gold layer.
As the further improvement of the utility model, the downside half hollow out direction of said substrate and the crossbeam of said pair of Material Cantilever Beam place direction is one of vertical and parallel.
The beneficial effect of the utility model is: compare with existing heat-mechanical type IR-FPA structure, this FPA structure has following advantage:
1. the FPA with the belt material bottom structure compares, and this structure has reduced the absorption of substrate to infrared radiation, effectively improved infrared absorption efficient, and then responsiveness is improved;
2. need supporting construction with full hollow out FPA and compare, this structure effectively improves the optical filling factor, more helps dwindling of pixel dimension;
3. the hot crosstalk phenomenon that possibly occur when the structure of half hollow out has been eliminated thermal imaging, the response time reduces, the thermal imaging faster;
4. the distortion semi-girder has adopted many inflection beam distortion superimposing technique, improved temperature-responsive sensitivity, and then responsiveness is improved;
5. variable shaped beam adopts superimposing technique up and down, effectively improves the optical filling factor of pixel;
6. helping pixel develops to the direction of smaller szie.
Description of drawings
Fig. 1 is the said pixel cell array structure of a utility model synoptic diagram;
Fig. 2 is the said single pixel cellular construction synoptic diagram of the utility model;
Fig. 3 is the cross-sectional view of Fig. 2;
Fig. 4 is said pair of Material Cantilever Beam structural representation of the utility model.
In conjunction with accompanying drawing, explanation below doing:
1---substrate 2---supporting layer
3---infrared absorption layer 4---reflector
5---two Material Cantilever Beam 6---entablature
7---sills 8---, first non-metallic layer
9---the first metal layers 10---, second metal level
11---second non-metallic layer 100---pixel unit
Embodiment
A kind of optics is read heat-mechanical type infrared detector structure; Comprise that several are the pixel unit 100 of array distribution; Said each pixel unit comprises: substrate 1, supporting layer 2, infrared absorption layer 3, reflector 4 and two Material Cantilever Beam 5; Said supporting layer is positioned on the upper side of said substrate, and the downside center of said substrate is half Openworks shape; Said infrared absorption layer is positioned at the upper side top of said supporting layer at interval, and said reflector is positioned on the said infrared absorption layer upper side; Said pair of Material Cantilever Beam is two, and parallel interval is symmetrically set on the said supporting layer upper side; Said each two Material Cantilever Beam comprise the entablature 6 and sill 7 of parallel interval setting up and down; Said sill is made up of with the first metal layer 9 first non-metallic layer 8; Said the first metal layer is positioned on the first non-metallic layer upper side, and downside one end of first non-metallic layer of this sill is connected to form one to extending below with said supporting layer; Said entablature is made up of second non-metallic layer 11 and second metal level 10; Said second non-metallic layer is positioned on the said second metal level upper side, and the other end of second non-metallic layer of this entablature axially is connected to form one with the other end of the downward extension respectively in the other end of second metal level with said first non-metallic layer along it; Second the end on nonmetal of the entablature of said two two Material Cantilever Beam extends in opposite directions with said infrared absorption layer and is connected to form one in the plane parallel with supporting surface, edge respectively.
Preferably, above-mentioned supporting layer, first non-metallic layer, second non-metallic layer and infrared absorption layer are respectively silicon oxide layer or silicon nitride layer.
Preferably, above-mentioned the first metal layer, second metal level and reflector layer are respectively aluminium lamination or gold layer.
Preferably, the crossbeam of the downside half hollow out direction of above-mentioned substrate and said pair of Material Cantilever Beam place direction is perpendicular or parallel.
Claims (4)
1. an optics is read heat-mechanical type infrared detector structure; Comprise that several are the pixel unit (100) of array distribution; It is characterized in that: said each pixel unit comprises: substrate (1), supporting layer (2), infrared absorption layer (3), reflector (4) and two Material Cantilever Beam (5); Said supporting layer is positioned on the upper side of said substrate, and the downside center of said substrate is half Openworks shape; Said infrared absorption layer is positioned at the upper side top of said supporting layer at interval, and said reflector is positioned on the said infrared absorption layer upper side; Said pair of Material Cantilever Beam is two, and parallel interval is symmetrically set on the said supporting layer upper side; Said each two Material Cantilever Beam comprise the entablature (6) and the sill (7) of parallel interval setting up and down; Said sill is made up of first non-metallic layer (8) and the first metal layer (9); Said the first metal layer is positioned on the first non-metallic layer upper side, and downside one end of first non-metallic layer of this sill is connected to form one to extending below with said supporting layer; Said entablature is made up of second non-metallic layer (11) and second metal level (10); Said second non-metallic layer is positioned on the said second metal level upper side, and the other end of second non-metallic layer of this entablature axially is connected to form one with the other end of the downward extension respectively in the other end of second metal level with said first non-metallic layer along it; Second the end on nonmetal of the entablature of said two two Material Cantilever Beam extends in opposite directions with said infrared absorption layer and is connected to form one in the plane parallel with supporting surface, edge respectively.
2. optics according to claim 1 is read heat-mechanical type infrared detector structure, it is characterized in that: said supporting layer, first non-metallic layer, second non-metallic layer and infrared absorption layer are respectively one of silicon oxide layer and silicon nitride layer.
3. optics according to claim 1 is read heat-mechanical type infrared detector structure, it is characterized in that: said the first metal layer, second metal level and reflector layer are respectively one of aluminium lamination and gold layer.
4. optics according to claim 1 is read heat-mechanical type infrared detector structure, it is characterized in that: the downside half hollow out direction of said substrate and the crossbeam of said pair of Material Cantilever Beam place direction is for one of vertical and parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200037197U CN202420685U (en) | 2012-01-06 | 2012-01-06 | Optical read-out heat-mechanical infrared detector structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200037197U CN202420685U (en) | 2012-01-06 | 2012-01-06 | Optical read-out heat-mechanical infrared detector structure |
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| CN202420685U true CN202420685U (en) | 2012-09-05 |
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| CN2012200037197U Withdrawn - After Issue CN202420685U (en) | 2012-01-06 | 2012-01-06 | Optical read-out heat-mechanical infrared detector structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199144A (en) * | 2012-01-06 | 2013-07-10 | 昆山光微电子有限公司 | Optical reading heat-mechanical infrared detector structure and manufacturing method thereof |
| CN105129718A (en) * | 2015-06-18 | 2015-12-09 | 中国科学院上海微***与信息技术研究所 | Optical readout infrared detector structure and manufacturing method thereof |
| CN113984215A (en) * | 2021-11-23 | 2022-01-28 | 天津津航技术物理研究所 | Near-zero power consumption MEMS infrared detector |
-
2012
- 2012-01-06 CN CN2012200037197U patent/CN202420685U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199144A (en) * | 2012-01-06 | 2013-07-10 | 昆山光微电子有限公司 | Optical reading heat-mechanical infrared detector structure and manufacturing method thereof |
| CN103199144B (en) * | 2012-01-06 | 2015-06-10 | 昆山光微电子有限公司 | Optical reading heat-mechanical infrared detector structure and manufacturing method thereof |
| CN105129718A (en) * | 2015-06-18 | 2015-12-09 | 中国科学院上海微***与信息技术研究所 | Optical readout infrared detector structure and manufacturing method thereof |
| CN113984215A (en) * | 2021-11-23 | 2022-01-28 | 天津津航技术物理研究所 | Near-zero power consumption MEMS infrared detector |
| CN113984215B (en) * | 2021-11-23 | 2023-08-11 | 天津津航技术物理研究所 | Near zero power consumption MEMS infrared detector |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20120905 Effective date of abandoning: 20150610 |
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| RGAV | Abandon patent right to avoid regrant |