CN202734967U - Uncooled infrared imaging focal plane array detector - Google Patents
Uncooled infrared imaging focal plane array detector Download PDFInfo
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- CN202734967U CN202734967U CN 201220403091 CN201220403091U CN202734967U CN 202734967 U CN202734967 U CN 202734967U CN 201220403091 CN201220403091 CN 201220403091 CN 201220403091 U CN201220403091 U CN 201220403091U CN 202734967 U CN202734967 U CN 202734967U
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- focal plane
- plane array
- array detector
- infrared imaging
- imaging focal
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- 238000003331 infrared imaging Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000010521 absorption reaction Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- 239000002131 composite material Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 11
- 238000005253 cladding Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000005676 thermoelectric effect Effects 0.000 description 2
- 206010003084 Areflexia Diseases 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
The embodiment of the utility model provides an uncooled infrared imaging focal plane array detector, which comprises a transparent substrate (1) and a plurality of single-layer movable micro-beam units (2) which are paved on the transparent substrate (1) in a non-nested mode; the transparent substrate (1) is transparent to light rays of a reading light path matched with the uncooled infrared imaging focal plane array detector. The embodiment of the utility model provides an uncooled infrared imaging focal plane array detector, when detecting the target object, because the substrate is transparent, avoided the silicon substrate to the energy loss that the sheltering from and the reflection of the infrared light that comes from the target object arouses, can effectively improve detectivity; meanwhile, the substrate is transparent, so that the substrate does not need to be hollowed out, a long-time bulk silicon corrosion process required for manufacturing a fully-hollowed-out structure is avoided, the manufacturing process is simplified, and the product yield is improved.
Description
Technical field
The utility model relates to the infrared imagery technique field, relates in particular to a kind of uncooled infrared imaging focal plane array detector.
Background technology
As everyone knows, the object that all temperature are higher than absolute zero all can produce infrared radiation, and the intensity of this infrared radiation and energy distribution are relevant with object temperature, is loaded with the characteristic information of object.By the infrared radiation of inspected object, the sightless infrared view of the mankind can be converted into visible image.
Common infrared detection device can be divided into two kinds of quantum type (refrigeration) infrared eye and pattern of fever (non-refrigeration) infrared eyes.Wherein the quantum type infrared eye is converted into electron energy with the photon energy of infrared radiation; Thermal type infrared detector then is to change to catch infrared information by the detector temperature that the infrared radiation that detects target object causes.
Because the excited electron energy of infrared light photon is suitable with the Electron Heat kinergety under the room temperature, so the infrared eye of quantum type need to be in liquid nitrogen (temperature 77K) refrigeration to suppress the Electron Heat motion, and this causes the quantum type infrared eye expensive.
Thermal type infrared detector need not liquid nitrogen refrigerating, has greatly reduced cost of manufacture, makes the infrared technique large-area applications become possibility.But other situations of common detector based on thermoelectric effect work are as because input current can produce additional heat at detector cells, so this detector is difficult to accurately detect the infrared radiation of incident; Because the existence of plain conductor makes heat isolation difficulty between this detector cells, limited the temperature rise performance of detector; In addition, the thermoelectric effect of described thermal type infrared detector is all very faint, and the sensing circuit that these situations require to cooperate with described thermal type infrared detector has high signal to noise ratio (S/N ratio) and gain, and this has not only increased design difficulty, and has improved device cost.
Should use up-light of mechanical principle reads non-refrigerate infrared focal plane array seeker, mostly adopt two Material Cantilever Beam array structures, temperature raise after the detecting unit of described non-refrigerate infrared focal plane array seeker absorbed the incident infrared light, and generation heat deformation, by the deformation of optical pickup system non-contact detecting, just obtained the infrared information of target again.Light is read non-refrigerate infrared focal plane array seeker and be need not interconnected wire, and the heat isolation is more prone between detector cells, has also saved the designing and making of sensing circuit, greatly reduces cost of development.
The light that adopts is at present read the Uncooled focal plane array row and is usually made at silicon substrate, and its structure comprises with the plurality of layers of double Material Cantilever Beam heat insulation structure of sacrifice layer and the two Material Cantilever Beam heat insulation structures of hollow out individual layer.The former need to keep silicon substrate, then when infrared ray process silicon substrate, can be because of the infrared light of reflex loss 40%, this will reduce detector sensitivity; Though the latter is reflected without silicon substrate, the utilization factor of infrared radiation is very high, yet this structure needs long-time back of the body chamber etching process and reliable stress control technique to make full engraved structure array on the flat film, manufacture craft there is very high requirement, the figure utilization factor of this structure is low simultaneously, is difficult to further reduce elemental area and improve resolution.
The utility model content
Technical problem to be solved in the utility model provides a kind of uncooled infrared imaging focal plane array detector, reduces process complexity, improves detector sensitivity.
A kind of uncooled infrared imaging focal plane array detector comprises transparent substrates (1) and is tiled in the movable micro-joist unit of a plurality of individual layers (2) on the described transparent substrates (1) in non-nested mode; Described transparent substrates (1) is transparent to the light of reading light path that matches with described uncooled infrared imaging focal plane array detector.
Preferably, the movable micro-joist unit of described individual layer (2) comprises supporting construction (201), thermal deformation structure (202) and infrared absorption and visible light reflection composite structure (203), described thermal deformation structure (202) has two groups, lay respectively at the both sides of described infrared absorption and visible light reflection composite structure (203), described infrared absorption and visible light composite structure (203) in described thermal deformation structure (202) one ends and the same plane are connected, and the other end is connected with described supporting construction (201).
Preferably, the movable micro-joist unit of described individual layer (2) is anchored by described supporting construction (201) and described transparent substrates (1).
Preferably, described thermal deformation structure (202) comprises hot isolation beams (204) and thermal deformation beam (205), described hot isolation beams (204) be connected thermal deformation beam (205) in same plane repeatedly the interval inflection connect.
Preferably, described thermal deformation beam (205) is two Material cladding beams, consists of the thermal expansivity difference of the bi-material of described thermal deformation beam (205).
Preferably, consist of thermal expansivity is high in the bi-material of described thermal deformation beam (205) material place one side towards described transparent substrates (1).
Preferably, described infrared absorption and visible light composite structure (203) are one tabular pair of material structure.
Preferably, described infrared absorption and visible light composite structure (203) are metal level towards described transparent substrates (1) one side, and opposite side is dielectric layer; Described metal level lower surface directly contacts with described dielectric layer upper surface.
The uncooled infrared imaging focal plane array detector that the utility model embodiment provides, adopt the metal level of infrared absorption and visible light composite structure (203) towards the project organization of transparent substrates, when target object is detected, from the infrared light direct irradiation of target object on the dielectric layer of the infrared absorption of non-refrigerate infrared focal plane array seeker and visible light composite structure (203), avoided silicon substrate for from the blocking and reflect the energy loss that causes of the infrared light of target object, but the Effective Raise detection sensitivity; Simultaneously, because substrate is transparent, also need not substrate is carried out hollow out, avoided making the required long-time bulk silicon etching technique of full engraved structure, simplify and make flow process, improve the finished product rate.
Description of drawings
A kind of uncooled infrared imaging focal plane array detector structural representation that Fig. 1 provides for the utility model one embodiment;
The probe unit structural representation of a kind of uncooled infrared imaging focal plane array detector that Fig. 2 provides for the utility model one embodiment;
The movable micro-joist unit structural representation of individual layer of a kind of uncooled infrared imaging focal plane array detector that Fig. 3 provides for the utility model one embodiment;
The thermal deformation structural representation of the uncooled infrared imaging focal plane array detector that Fig. 4 provides for the utility model one embodiment.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
The uncooled infrared imaging focal plane array detector that the utility model embodiment provides as shown in Figure 1, be made of in transparent substrates (1) tiling in non-nested mode a plurality of individual layer micro-joist units (2), the testing result of each individual layer micro-joist unit (2) has namely consisted of the infrared view of target object.
Described transparent substrates (1) is to visible transparent, and is especially transparent to the light of reading light path that matches with described uncooled infrared imaging focal plane array detector.In certain embodiments, institute's substrate of stating clearly (1) can be glass substrate or Sapphire Substrate.
The movable micro-joist unit of described individual layer (2) comprises supporting construction (201), thermal deformation structure (202) and infrared absorption and visible light reflection composite structure (203).
Referring to Fig. 2, described supporting construction (201) is anchored the movable micro-joist unit of described individual layer (2) in transparent substrates (1).Described supporting construction (201) can use low thermal conductivity material to make, to increase the heat isolation between movable micro-joist unit (2) and the transparent substrates (1).In certain embodiments, described supporting construction (201) can be made by monox.
Referring to Fig. 3, described thermal deformation structure (202) has two groups, lay respectively at the both sides of infrared absorption and visible light reflection composite structure (203), each described infrared absorption and visible light composite structure (203) of organizing in thermal deformation structure (202) one ends and the same plane is connected, and the other end is connected with described supporting construction (201).
Described infrared absorption and visible light composite structure (203) are one tabular pair of material structure, wherein the side towards described transparent substrates (1) is metal level, is used for the visible light of reading light path that reflection matches with described uncooled infrared imaging focal plane array detector; Opposite side is the dielectric layer with higher Infrared Absorption Coefficient, is used for absorbing the infrared radiation from target object.Described metal level lower surface directly contacts with the dielectric layer upper surface.In certain embodiments, described infrared absorption and visible light composite structure (203) can be the rectangular plate shape structures that silicon oxide film and aluminium film consist of, and wherein, silicon oxide film (dielectric layer) can be 0.3 micron, and aluminium film (metal level) can be 0.02 micron.
Referring to Fig. 4, described thermal deformation structure (202) comprises hot isolation beams (204) and thermal deformation beam (205), and described hot isolation beams (204) is connected 205 with the thermal deformation beam) interval inflection connection in same plane.
Described hot isolation beams (204) can adopt the lower material of thermal conductivity coefficient to make, and for example, in certain embodiments, described hot isolation beams (204) can be selected silica material, is used for the heat isolation between described thermal deformation beam (205) and other structures.Described thermal deformation beam (205) is two Material cladding beams, consists of the thermal expansivity difference of the bi-material of described thermal deformation beam (205).In the Available Material scope, preferably select the larger bi-materials of two kinds of thermal expansion coefficient differences to make, and the thermal expansion coefficient difference of bi-material is the bigger the better, and the warpage degree of this bi-material and their temperature correlation.For example, described thermal deformation beam (205) can select 0.3 micron thickness monox and 0.2 micron thickness aluminium to consist of double-material beam, and wherein aluminium is the high material of thermal expansivity, the material that the monox thermal expansivity is relatively low.The monox thermal expansivity is 0.5E-6K
-1And aluminium is 23.5E-6K
-1
As shown in Figure 2, consist of thermal expansivity is high in the kind material of described thermal deformation beam (205) material place one side towards described transparent substrates (1).
When the uncooled infrared imaging focal plane array detector that utilizes the utility model embodiment to provide is caught the infrared target view, described uncooled infrared imaging focal plane array detector and supportingly with it read the light path collaborative work, the described emergent light of reading light path sees through transparent substrates (1) and is radiated on the metal level of described infrared absorption and visible light composite structure (203), sees through again transparent substrates (1) after reflecting and continues in the described light path internal delivery of reading.
The dielectric layer head for target object of described infrared absorption and visible light composite structure (203).After the infrared radiation from target object arrives the movable micro-joist unit of described individual layer (2), the dielectric layer of described infrared absorption and visible light composite structure (203) absorbs infrared energy, temperature raises, the part of this energy is conducted along thermal deformation structure (202), cause that thermal deformation beam (205) temperature raises, because of thermal mismatching warpage occurs so that consist of the bi-material of thermal deformation beam (205), driving simultaneously infrared absorption and visible light composite structure (203) rotates, even also the metal level of infrared absorption and visible light composite structure (203) deflects, this deflection angle can be detected by the light path of reading that matches with described uncooled infrared imaging focal plane array detector.
Because the deflection angle of the metal level of described infrared absorption and visible light composite structure (203) and the energy absorption positive correlation of the movable micro-joist unit of described individual layer (2), and the infrared spoke intensity positive correlation of the caloric receptivity of the movable micro-joist unit of described individual layer (2) and target object, the uncooled infrared imaging focal plane array detector that therefore provides by the utility model embodiment can obtain the correlationship of deflection angle and corresponding target object infrared intensity of the metal level of described infrared absorption and visible light composite structure (203).Thereby, the described non-refrigerate infrared focal plane array seeker that the utility model embodiment provides can be converted into the infrared view of target object focal plane array and list each pixel infrared absorption in various degree and the metal level deflection angle of visible light composite structure (203), and this deflection angle is detected by the light path of reading that matches with described uncooled infrared imaging focal plane array detector.The CCD that the described emergent ray of reading light path is detected in the light path receives, and forms image.So far, the infrared signal of target object is converted into the visible light signal of CCD, and human eye can be identified.
What match with described uncooled infrared imaging focal plane array detector reads light path when the deflection angle to described metal level detects, launch incident ray by reading light path, and receive the deflection angle that the reflection ray that goes out through this metal layer reflection calculates described metal level.Target object can not with read light path and be positioned at the same side, this is because the Infrared that target object sends also will by described metal layer reflection, can't realize having detected.
Read the light of light path in the prior art to substrate, especially silicon substrate, opaque, this has just determined to read light path must place non-substrate place one side (namely with detector in the same side), target object have to be placed on substrate place one side, and this infrared light that causes target object to send must be through inciding on the detector by substrate.The uncooled infrared imaging focal plane array detector that the utility model embodiment provides, by using transparent substrates (this substrate pair light of reading in the light path that matches with described uncooled infrared imaging focal plane array detector is transparent), no longer be defined so that read the position of light path, target object also can be positioned at non-substrate place, plane, detector place one side.Particularly, in the utility model embodiment, the metal level of infrared absorption and visible light composite structure (203) is towards transparent substrates (1), when target object is detected, shine directly on the metal level of infrared absorption and visible light composite structure (203) by transparent substrates (1) from the incident ray of reading light path, from the infrared light direct irradiation of target object on the dielectric layer of the infrared absorption of non-refrigerate infrared focal plane array seeker and visible light composite structure (203), avoided silicon substrate for from the blocking and reflect the energy loss that causes of the infrared light of target object, but the Effective Raise detection sensitivity; Simultaneously, also need not substrate is carried out hollow out, avoided making the required long-time bulk silicon etching technique of full engraved structure, simplify and make flow process, improve the finished product rate.
More than to a kind of detector provided by the utility model, be described in detail, used specific case herein principle of the present utility model and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present utility model and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present utility model, all will change in specific embodiments and applications, in sum, this description should not be construed as restriction of the present utility model.
Claims (8)
1. a uncooled infrared imaging focal plane array detector is characterized in that, comprises transparent substrates (1) and is tiled in the movable micro-joist unit of a plurality of individual layers (2) on the described transparent substrates (1) in non-nested mode; Described transparent substrates (1) is transparent to the light of reading light path that matches with described uncooled infrared imaging focal plane array detector.
2. uncooled infrared imaging focal plane array detector according to claim 1, it is characterized in that, the movable micro-joist unit of described individual layer (2) comprises supporting construction (201), thermal deformation structure (202) and infrared absorption and visible light reflection composite structure (203), described thermal deformation structure (202) has two groups, lay respectively at the both sides of described infrared absorption and visible light reflection composite structure (203), described infrared absorption and visible light composite structure (203) in described thermal deformation structure (202) one ends and the same plane are connected, and the other end is connected with described supporting construction (201).
3. uncooled infrared imaging focal plane array detector according to claim 2 is characterized in that, the movable micro-joist unit of described individual layer (2) is anchored by described supporting construction (201) and described transparent substrates (1).
4. uncooled infrared imaging focal plane array detector according to claim 2, it is characterized in that, described thermal deformation structure (202) comprises hot isolation beams (204) and thermal deformation beam (205), described hot isolation beams (204) be connected thermal deformation beam (205) in same plane repeatedly the interval inflection connect.
5. uncooled infrared imaging focal plane array detector according to claim 4 is characterized in that, described thermal deformation beam (205) is two Material cladding beams, consists of the thermal expansivity difference of the bi-material of described thermal deformation beam (205).
6. uncooled infrared imaging focal plane array detector according to claim 5 is characterized in that, consists of thermal expansivity is high in the bi-material of described thermal deformation beam (205) material place one side towards described transparent substrates (1).
7. uncooled infrared imaging focal plane array detector according to claim 2 is characterized in that, described infrared absorption and visible light composite structure (203) are one tabular pair of material structure.
8. uncooled infrared imaging focal plane array detector according to claim 2 is characterized in that, described infrared absorption and visible light composite structure (203) are metal level towards described transparent substrates (1) one side, and opposite side is dielectric layer; Described metal level lower surface directly contacts with described dielectric layer upper surface.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220403091 CN202734967U (en) | 2012-08-14 | 2012-08-14 | Uncooled infrared imaging focal plane array detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220403091 CN202734967U (en) | 2012-08-14 | 2012-08-14 | Uncooled infrared imaging focal plane array detector |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103592032A (en) * | 2012-08-14 | 2014-02-19 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN104458011A (en) * | 2013-09-13 | 2015-03-25 | 北京大学 | Full waveband infrared focal plane array based on MEMS technology |
| WO2015109678A1 (en) * | 2014-01-22 | 2015-07-30 | Xiaomei Yu | Uncooled focal plane array for ir and thz imaging |
-
2012
- 2012-08-14 CN CN 201220403091 patent/CN202734967U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103592032A (en) * | 2012-08-14 | 2014-02-19 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN104458011A (en) * | 2013-09-13 | 2015-03-25 | 北京大学 | Full waveband infrared focal plane array based on MEMS technology |
| WO2015109678A1 (en) * | 2014-01-22 | 2015-07-30 | Xiaomei Yu | Uncooled focal plane array for ir and thz imaging |
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