CN203116855U - Uncooled infrared imaging focal plane array detector - Google Patents
Uncooled infrared imaging focal plane array detector Download PDFInfo
- Publication number
- CN203116855U CN203116855U CN201220422736.4U CN201220422736U CN203116855U CN 203116855 U CN203116855 U CN 203116855U CN 201220422736 U CN201220422736 U CN 201220422736U CN 203116855 U CN203116855 U CN 203116855U
- Authority
- CN
- China
- Prior art keywords
- focal plane
- plane array
- infrared imaging
- array detector
- imaging focal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003331 infrared imaging Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000002131 composite material Substances 0.000 claims abstract description 23
- 238000012546 transfer Methods 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- 239000007769 metal material Substances 0.000 claims abstract description 4
- 238000009413 insulation Methods 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005676 thermoelectric effect Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 206010003084 Areflexia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The embodiment of the utility model provides an uncooled infrared imaging focal plane array detector, include: the micro-cantilever unit is paved on the transparent substrate through the substrate heat transfer structure in a nested manner; the micro-cantilever unit comprises a thermal deformation structure, a reflector composite structure and a support structure; the reflecting plate composite structure adopts a dual-material structure, wherein one side facing the transparent substrate is made of a metal material, and the layer facing the target object is made of a material with a high infrared absorption coefficient. When the detector is used for detecting a target object, infrared light from the target object directly irradiates on an infrared absorption layer of the detector, so that the measurement sensitivity is improved. In addition, due to the adoption of the transparent substrate, the substrate below the micro-cantilever unit does not need to be hollowed, and the process complexity is reduced.
Description
Technical field
The utility model relates to the infrared imaging detector technical field, relates in particular to a kind of uncooled infrared imaging focal plane array detector.
Background technology
The object that all temperature are higher than absolute zero all can produce infrared radiation, and the intensity of this radiation and energy distribution are relevant with object temperature, is loaded with the characteristic information of object.By the infrared radiation of inspected object, the sightless infrared view of the mankind can be converted into visible image.
Common infrared detection device generally can be divided into two kinds of quantum type infrared radiation detector and heat type infrared radiation detectors.Wherein the quantum type infrared eye is converted into electron energy with the photon energy of infrared radiation, and the pattern of fever infrared eye then is to change to catch infrared information by the detector temperature that the infrared radiation that detects target object causes.
Because the excited electron energy of infrared light photon is suitable with the electronics energy of thermal motion under the room temperature, so the infrared eye of quantum type need use liquid nitrogen (77K) to freeze with the thermal motion of inhibition electronics, and this causes the quantum type infrared eye expensive.
The pattern of fever infrared eye need not liquid nitrogen refrigerating, has significantly reduced cost of manufacture, makes the infrared technique large-area applications become possibility.The common detector based on thermoelectric effect work, because input current can produce additional heat at detector cells, so this detector is difficult to accurately detect the infrared radiation of incident, the existence of plain conductor simultaneously makes heat isolation difficulty between the unit, limited the temperature rise performance, and thermoelectric effect is all very faint, this sensing circuit that just needs to cooperate with it has high signal to noise ratio (S/N ratio) and gain, this has not only increased difficult design, and has improved device cost.Should use up-light of mechanical principle reads un-cooled infrared focal plane array, adopt two Material Cantilever Beam array structures mostly, temperature raise after detecting unit absorbed the incident infrared light, and heat deformation takes place, by the deformation of optical pickup system non-contact detecting, just obtained the infrared information of target again.The detector that light is read need not interconnected lead, and the heat isolation is more prone between the unit, has also saved design and the making of sensing circuit, greatly reduces cost of development.
The present light that adopts is read the non-refrigeration focal surface array and is made at silicon substrate usually, comprises the plurality of layers of double Material Cantilever Beam heat insulation structure and the two Material Cantilever Beam heat insulation structures of hollow out individual layer that have sacrifice layer.The former need keep silicon substrate, then when infrared ray process silicon substrate, can be because of the infrared light of reflex loss 40%, this will reduce detector sensitivity; Though the latter does not have the silicon substrate reflection, the utilization factor of infrared radiation is very high, then this structure need long-time back of the body chamber etching process and reliably the Stress Control technology make on the voucher film engraved structure array entirely, manufacture craft there is very high requirement, simultaneously this figure utilization factor is low, is difficult to further reduce elemental area and improve resolution.
The utility model content
In view of this, the utility model embodiment provides a kind of uncooled infrared imaging focal plane array detector, this detector comprises: transparent substrates, the substrate heat transfer structure with high thermal conductivity coefficient and micro-cantilever unit, wherein, described micro-cantilever unit is tiled on the described transparent substrates by described substrate heat transfer structure in nested mode;
Described micro-cantilever unit comprises thermal deformation structure, heat insulation structure, reflector composite structure and supporting construction;
Described thermal deformation structure, heat insulation structure and supporting construction respectively have a pair of, and symmetry is connected in the both sides of described reflector composite structure in turn;
Described reflector composite structure adopts two material structures, wherein, made by metal material towards a side of described transparent substrates, and one deck of head for target object is made by the material with high IR absorption coefficient.
When the uncooled infrared imaging focal plane array detector that utilizes the utility model embodiment to provide detects target object, from the infrared light direct irradiation of target object on the infrared absorption layer of detector, avoid the loss of the energy that silicon substrate causes for the reflection from the infrared radiation of target object, thereby improved the sensitivity of measuring.The second, because the transparent substrates that this detector adopts, target object can place non-substrate place, plane, detector place one side, thereby need not the substrate of below, micro-cantilever unit is emptied, and has reduced process complexity, and has improved the yield rate of product.The 3rd, because this detector has the substrate heat transfer structure, the heat that has lowered between the micro-cantilever unit is crosstalked, thereby has reduced the influence of detector operating ambient temperature change for measurement result, is conducive to improve image quality.
Description of drawings
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, the accompanying drawing that describes below only is some embodiment that put down in writing among the application, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
A kind of uncooled infrared imaging focal plane array detector structural representation that Fig. 1 provides for the utility model embodiment;
The uncooled infrared imaging focal plane array detector top plan view that Fig. 2 provides for the utility model embodiment;
Micro-cantilever unit and substrate heat transfer structure connection diagram on the uncooled infrared imaging focal plane array detector that Fig. 3 provides for the utility model embodiment.
Embodiment
In order to make those skilled in the art person understand technical scheme in the disclosure better, below in conjunction with the accompanying drawing among the utility model embodiment, technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is disclosure part embodiment, rather than whole embodiment.Based on the embodiment in the disclosure, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all should belong to the scope of disclosure protection.
As shown in Figure 1, the structural representation of the uncooled infrared imaging focal plane array detector that provides for the utility model embodiment of Fig. 1.
This detector comprises transparent substrates 11, substrate heat transfer structure 12 and micro-cantilever unit 13.Wherein, a plurality of micro-cantilevers unit 13 is tiled on the transparent substrates 11 by substrate heat transfer structure 12 in nested mode, and substrate heat transfer structure 12 directly contacts with transparent substrates 11, micro-cantilever unit 13 respectively.Wherein, the number of the area specification of transparent substrates 11 and tiling micro-cantilever unit 13 thereon can determine that the utility model embodiment does not limit according to practical application.
In addition, in the technical scheme that the utility model embodiment provides, 11 pairs of visible transparent of the transparent substrates in this detector, especially transparent to the light of reading light path in the infrared imaging system; For the heat that reduces between the adjacent micro-cantilever unit 13 is crosstalked, the material require of making substrate heat transfer structure 12 has higher thermal conductivity coefficient.
As Fig. 2, shown in Figure 3, the uncooled infrared imaging focal plane array detector top plan view that Fig. 2 provides for the utility model embodiment, micro-cantilever unit and substrate heat transfer structure connection diagram on the uncooled infrared imaging focal plane array detector that Fig. 3 provides for the utility model embodiment.As seen from Figure 2, micro-cantilever unit 13 comprises: supporting construction 131, heat insulation structure 132, thermal deformation structure 133 and reflector composite structure 134.
As seen from Figure 3, supporting construction 131 constitutes the anchor point between micro-cantilever unit 13 and the substrate heat transfer structure 12, and the material of making this structure has lower thermal conductivity coefficient, is beneficial to the heat isolation between the micro-cantilever unit 13.In addition, respectively there are a pair of supporting construction 131, heat insulation structure 132 and thermal deformation structure 133 in each micro-cantilever unit 13, and symmetry is connected in the both sides of reflector composite structure 134 in turn.Be specially, an end of thermal deformation structure 133 is connected with reflector composite structure 134, and the other end is connected with an end of heat insulation structure 132, and the other end of heat insulation structure is connected with supporting construction 134.
In this public embodiment, heat insulation structure is made by the material with low thermal conductance coefficient.And thermal deformation structure 133 is two material composite beams, and two kinds of material thermal expansion coefficients differ greatly and Young modulus differs as far as possible little, and the selection of the thickness of these two kinds of materials ratio according to for when temperature change value one regularly, the deformation quantity maximum of this thermal deformation structure 133.For example when making thermal deformation structure 133, metal can be attached on the nonmetal film, and when two kinds of material thicknesses of thermal deformation structure 133 are selected, thereby obtain the highest sensitivity in order to make thermal deformation structure 133 reach maximum distortion, the ratio of two kinds of material thicknesses can be near the inverse ratio square root of two kinds of young modulus of material, and the gross thickness of beam should be as far as possible little under the prerequisite that satisfies process conditions and supporting condition.
When the uncooled infrared imaging focal plane array detector that the concrete making disclosure provides, transparent substrates 11 can adopt glass substrate or Sapphire Substrate.Substrate heat transfer structure 12 can be had the material making of high thermal conductivity coefficient by chromium, aluminium or gold etc.Supporting construction 131 in the micro-cantilever unit 13 can be had the material making of low thermal conductance coefficient by silicon nitride or monox etc., is used for carrying out the heat isolation of unit.Side towards transparent substrates 11 in the reflector composite structure 133 can adopt the material that aluminium or gold etc. can reflect the visible light of reading light path to make.And the material that a side of head for target object can adopt silicon nitride or monox etc. to have higher infrared absorption coefficient in the reflector composite structure 133 is made.In addition, heat insulation structure 132 also can adopt silicon nitride or monox etc. to have the material making of low thermal conductance coefficient.As previously mentioned, material that Young modulus differs as far as possible little is made thermal deformation structure 133 by two kinds of thermal expansion coefficient differences are big, usually can adopt combinations of materials such as monox/aluminium or silicon nitride/gold to constitute, for example adhere to one deck rate film at monox, or adhere to one deck gold thin film etc. at silicon nitride.
When the non-refrigerate infrared focal plane array seeker that uses the utility model embodiment to provide is caught the infrared target view, this detector and supportingly read light path and refrigerating ring collaborative work.And refrigerating ring contacts with this substrate of detector heat transfer structure 12, and the basic and room temperature of the cold junction temperature of each micro-cantilever unit 13 is consistent on the control detector, crosstalks with the heat that reduces between each micro-cantilever unit 13.
When catching the infrared target view, this detector is positioned to be read on the light path, the transparent substrates 11 that the emergent light of reading light path sees through transparent detector is radiated on the metal level of reflector composite structure 133, sees through transparent substrates 11 continuation after reflecting again and transmits in light path.And reach the micro-cantilever 13 of detector when the infrared radiation from target object after, reflector composite structure 133 absorbs infrared energy, temperature raises, warpage takes place because of thermal mismatching in thermal deformation structure 133, and drive reflector composite structure 133 rotates, that is to say that the reflector of reading on the light path deflects, and this deflection angle can be read the deflection angle acquisition of light path by detection.
Because the rotational angle of reflector composite structure 133 is relevant with the energy that micro-cantilever unit 13 absorbs, and the caloric receptivity of micro-cantilever unit 13 is relevant with the infrared intensity of target object, the relation between the deflection angle that can obtain reflector composite structure 133 thus and the corresponding target object infrared intensity.Finally, (Charge Coupled Device CCD) receives, and forms image to read charge-coupled device (CCD) in the detected light path of light in the light path.So far, the infrared signal of target object is converted into the visible light signal of CCD, finishes infrared view to the conversion of the discernible visible light view of human eye.
When the uncooled infrared imaging focal plane array detector that utilizes the utility model embodiment to provide detects target object, from the infrared light direct irradiation of target object on the infrared absorption layer of detector, avoid the loss of the energy that silicon substrate causes for the reflection from the infrared radiation of target object, thereby improved the sensitivity of measuring.The second, because the transparent substrates that this detector adopts, target object can place non-substrate place, plane, detector place one side, thereby need not the substrate of below, micro-cantilever unit is emptied, and has reduced process complexity, and has improved the yield rate of product.The 3rd, because this detector has the substrate heat transfer structure, the heat that has lowered between the micro-cantilever unit is crosstalked, thereby has reduced the influence of detector operating ambient temperature change for measurement result, is conducive to improve image quality.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from spirit or scope of the present utility model in other embodiments herein.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet the wideest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. uncooled infrared imaging focal plane array detector, it is characterized in that, comprise: transparent substrates, the substrate heat transfer structure with high thermal conductivity coefficient and micro-cantilever unit, wherein, described micro-cantilever unit is tiled on the described transparent substrates by described substrate heat transfer structure in nested mode;
Described micro-cantilever unit comprises thermal deformation structure, heat insulation structure, reflector composite structure and supporting construction;
Described thermal deformation structure, heat insulation structure and supporting construction respectively have a pair of, and symmetry is connected in the both sides of described reflector composite structure in turn;
Described reflector composite structure adopts two material structures, wherein, made by metal material towards a side of described transparent substrates, and one deck of head for target object is made by the material with high IR absorption coefficient.
2. uncooled infrared imaging focal plane array detector according to claim 1 is characterized in that, described reflector composite structure adopts aluminium or gold to be made towards a side of described transparent substrates; One side of described reflector composite structure head for target object adopts silicon nitride or monox to be made.
3. uncooled infrared imaging focal plane array detector according to claim 1 is characterized in that, described transparent substrates is glass substrate or Sapphire Substrate.
4. uncooled infrared imaging focal plane array detector according to claim 1 is characterized in that, described substrate heat transfer structure is made by chromium, aluminium or gold.
5. uncooled infrared imaging focal plane array detector according to claim 1 is characterized in that, described supporting construction adopts the material with low thermal conductance coefficient to be made.
6. uncooled infrared imaging focal plane array detector according to claim 1 is characterized in that, described heat insulation structure adopts the material with low thermal conductance coefficient to be made.
7. uncooled infrared imaging focal plane array detector according to claim 1 is characterized in that, described thermal deformation structure is two material structures, and two kinds the material expansion coefficient difference is big and Young modulus difference is less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220422736.4U CN203116855U (en) | 2012-08-23 | 2012-08-23 | Uncooled infrared imaging focal plane array detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220422736.4U CN203116855U (en) | 2012-08-23 | 2012-08-23 | Uncooled infrared imaging focal plane array detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203116855U true CN203116855U (en) | 2013-08-07 |
Family
ID=48897191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220422736.4U Expired - Lifetime CN203116855U (en) | 2012-08-23 | 2012-08-23 | Uncooled infrared imaging focal plane array detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203116855U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN104458011A (en) * | 2013-09-13 | 2015-03-25 | 北京大学 | Full waveband infrared focal plane array based on MEMS technology |
| WO2015109678A1 (en) * | 2014-01-22 | 2015-07-30 | Xiaomei Yu | Uncooled focal plane array for ir and thz imaging |
-
2012
- 2012-08-23 CN CN201220422736.4U patent/CN203116855U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN104458011A (en) * | 2013-09-13 | 2015-03-25 | 北京大学 | Full waveband infrared focal plane array based on MEMS technology |
| WO2015109678A1 (en) * | 2014-01-22 | 2015-07-30 | Xiaomei Yu | Uncooled focal plane array for ir and thz imaging |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100594175C (en) | Optical-mechanical double-layer structure uncooled infrared imaging focal plane array detector | |
| KR101910575B1 (en) | Infrared detector and infrared image sensor | |
| US4754139A (en) | Uncooled high resolution infrared imaging plane | |
| CN101285709B (en) | Optical mechanics infrared imager based on Hartmann wavefront sensor | |
| CN100453443C (en) | Glass substrate optical display infra-red sensor | |
| CN104458011A (en) | Full waveband infrared focal plane array based on MEMS technology | |
| WO2009039683A1 (en) | Infrared sensor, focal plane array and infrared imaging system thereof | |
| CN103575403A (en) | Terahertz focal plane array based on MEMS technology | |
| CN203116855U (en) | Uncooled infrared imaging focal plane array detector | |
| CN102874735A (en) | Two-material micro-cantilever, electromagnetic radiation detector and detection method | |
| CN110571232A (en) | Infrared and visible light dual-band sensor pixel and array | |
| CN202924718U (en) | Double-material micro-cantilever and electromagnetic radiation detector | |
| US8440972B2 (en) | Radiation detector with microstructured silicon | |
| CN103630242A (en) | Uncooled infrared imaging focal plane array detector | |
| CN103630246A (en) | Uncooled infrared imaging focal plane array detector | |
| CN202734967U (en) | Uncooled infrared imaging focal plane array detector | |
| CN100581986C (en) | Uncooled infrared imaging focal plane array detector | |
| CN1254959C (en) | Light mechanical type microbeam array heating type infrared image sensor | |
| CN106949978A (en) | A kind of thermal imaging sensor pixel cell and its array | |
| CN103592032A (en) | Uncooled infrared imaging focal plane array detector | |
| CN102650547A (en) | Optical reading method for micro lens array of non-refrigeration infrared imaging system | |
| CN202793597U (en) | Uncooled infrared imaging focal plane array detector | |
| CN2703328Y (en) | Optical-mechanical micro-beam array thermal infrared image sensor | |
| CN202836765U (en) | Uncooled infrared imaging focal plane array detector | |
| CN102288297B (en) | Uncooled far infrared thermal imaging system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180214 Address after: 101407 Beijing city Huairou District Yanqi Yanqi Economic Development Zone South four Street No. 25 Building No. 3 hospital No. 307 Patentee after: Beijing Zhongke Micro Intellectual Property Service Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130807 |