CN202836765U - Uncooled infrared imaging focal plane array detector - Google Patents

Uncooled infrared imaging focal plane array detector Download PDF

Info

Publication number
CN202836765U
CN202836765U CN 201220517971 CN201220517971U CN202836765U CN 202836765 U CN202836765 U CN 202836765U CN 201220517971 CN201220517971 CN 201220517971 CN 201220517971 U CN201220517971 U CN 201220517971U CN 202836765 U CN202836765 U CN 202836765U
Authority
CN
China
Prior art keywords
focal plane
thermal deformation
plane array
array detector
infrared imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220517971
Other languages
Chinese (zh)
Inventor
高超群
焦斌斌
刘瑞文
尚海平
陈大鹏
叶甜春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
I-Land Technology Co ltd
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to CN 201220517971 priority Critical patent/CN202836765U/en
Application granted granted Critical
Publication of CN202836765U publication Critical patent/CN202836765U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The embodiment of the utility model provides an uncooled infrared imaging focal plane array detector, which comprises a transparent substrate (1) and a plurality of micro-cantilever units (2) which are paved on the transparent substrate (1) in a non-nested mode; the transparent substrate (1) is transparent to light rays of a reading light path matched with the uncooled infrared imaging focal plane array detector. The embodiment of the utility model provides an uncooled infrared imaging focal plane array detector, when detecting the target object, because the substrate is transparent, avoided the silicon substrate to the energy loss that the sheltering from and the reflection of the infrared light that comes from the target object arouses, can effectively improve detectivity; meanwhile, the substrate is transparent, so that the substrate does not need to be hollowed out, a long-time bulk silicon corrosion process required for manufacturing a fully-hollowed-out structure is avoided, the manufacturing process is simplified, and the product yield is improved.

Description

A kind of uncooled infrared imaging focal plane array detector
Technical field
The utility model relates to the infrared imagery technique field, relates in particular to a kind of uncooled infrared imaging focal plane array detector.
Background technology
As everyone knows, the object that all temperature are higher than absolute zero all can produce infrared radiation, and the intensity of this infrared radiation and energy distribution are relevant with object temperature, is loaded with the characteristic information of object.By the infrared radiation of inspected object, the sightless infrared view of the mankind can be converted into visible image.
Common infrared detection device can be divided into two kinds of quantum type (refrigeration) infrared eye and pattern of fever (non-refrigeration) infrared eyes.Wherein the quantum type infrared eye is converted into electron energy with the photon energy of infrared radiation; Thermal type infrared detector then is to change to catch infrared information by the detector temperature that the infrared radiation that detects target object causes.
Because the excited electron energy of infrared light photon is suitable with the Electron Heat kinergety under the room temperature, so the infrared eye of quantum type need to be in liquid nitrogen (temperature 77K) refrigeration to suppress the Electron Heat motion, and this causes the quantum type infrared eye expensive.
Thermal type infrared detector need not liquid nitrogen refrigerating, has greatly reduced cost of manufacture, makes the infrared technique large-area applications become possibility.But other situations of common detector based on thermoelectric effect work are as because input current can produce additional heat at detector cells, so this detector is difficult to accurately detect the infrared radiation of incident; Because the existence of plain conductor makes heat isolation difficulty between this detector cells, limited the temperature rise performance of detector; In addition, the thermoelectric effect of described thermal type infrared detector is all very faint, and the sensing circuit that these situations require to cooperate with described thermal type infrared detector has high signal to noise ratio (S/N ratio) and gain, and this has not only increased design difficulty, and has improved device cost.
Should use up-light of mechanical principle reads non-refrigerate infrared focal plane array seeker, mostly adopt two Material Cantilever Beam array structures, temperature raise after the detecting unit of described non-refrigerate infrared focal plane array seeker absorbed the incident infrared light, and generation heat deformation, by the deformation of optical pickup system non-contact detecting, just obtained the infrared information of target again.Light is read non-refrigerate infrared focal plane array seeker and be need not interconnected wire, and the heat isolation is more prone between detector cells, has also saved the designing and making of sensing circuit, greatly reduces cost of development.
The light that adopts is at present read the Uncooled focal plane array row and is usually made at silicon substrate, and its structure comprises with the plurality of layers of double Material Cantilever Beam heat insulation structure of sacrifice layer and the two Material Cantilever Beam heat insulation structures of hollow out individual layer.The former need to keep silicon substrate, then when infrared ray process silicon substrate, can be because of the infrared light of reflex loss 40%, this will reduce detector sensitivity; Though the latter is reflected without silicon substrate, the utilization factor of infrared radiation is very high, yet this structure needs long-time back of the body chamber etching process and reliable stress control technique to make full engraved structure array on the flat film, manufacture craft there is very high requirement, the figure utilization factor of this structure is low simultaneously, is difficult to further reduce elemental area and improve resolution.
The utility model content
Technical problem to be solved in the utility model provides a kind of uncooled infrared imaging focal plane array detector, reduces process complexity, improves detector sensitivity.
A kind of uncooled infrared imaging focal plane array detector comprises transparent substrates (1) and is tiled in a plurality of micro-cantilevers unit (2) on the described transparent substrates (1) in non-nested mode; Described transparent substrates (1) is transparent to the light of reading light path that matches with described uncooled infrared imaging focal plane array detector.
The uncooled infrared imaging focal plane array detector that the utility model embodiment provides, adopt the metal level of reflector composite structure (203) towards the project organization of transparent substrates, when target object is detected, from the infrared light direct irradiation of target object on the absorption layer of the reflector composite structure (203) of non-refrigerate infrared focal plane array seeker, avoided silicon substrate for from the blocking and reflect the energy loss that causes of the infrared light of target object, but the Effective Raise detection sensitivity; Simultaneously, because substrate is transparent, also need not substrate is carried out hollow out, avoided making the required long-time bulk silicon etching technique of full engraved structure, simplify and make flow process, improve the finished product rate.
Description of drawings
A kind of uncooled infrared imaging focal plane array detector array schematic diagram that Fig. 1 provides for the utility model one embodiment;
The probe unit structural representation of a kind of uncooled infrared imaging focal plane array detector that Fig. 2 provides for the utility model one embodiment;
The micro-cantilever cellular construction schematic diagram of a kind of uncooled infrared imaging focal plane array detector that Fig. 3 provides for the utility model one embodiment;
The thermal deformation structural representation of the uncooled infrared imaging focal plane array detector that Fig. 4 provides for the utility model one embodiment.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
The uncooled infrared imaging focal plane array detector that the utility model embodiment provides is applied to the Optical Readout IR Imaging based on MEMS (micro electro mechanical system) (Micro-Electro-Mechanical Systems, MEMS).As shown in Figure 1, this uncooled infrared imaging focal plane array detector is made of in transparent substrates (1) tiling in non-nested mode a plurality of micro-cantilevers unit (2), and the testing result of each micro-cantilever unit (2) has namely consisted of the infrared view of target object.
Described transparent substrates (1) is to visible transparent, and is especially transparent to the light of reading light path that matches with described uncooled infrared imaging focal plane array detector.In certain embodiments, institute's substrate of stating clearly (1) can be glass substrate or Sapphire Substrate.
Described micro-cantilever unit (2) comprises supporting construction (201), thermal deformation structure (202) and reflector composite structure (203).
Referring to Fig. 2, described supporting construction (201) is anchored described micro-cantilever unit (2) in transparent substrates (1).Described supporting construction (201) can use low thermal conductivity material to make, to increase the heat isolation between micro-cantilever unit (2) and the transparent substrates (1).In certain embodiments, described supporting construction (201) can be made by monox.
Referring to Fig. 3, described thermal deformation structure (202) has two groups, lay respectively at the both sides of reflector composite structure (203), each described reflector composite structure (203) of organizing in thermal deformation structure (202) one ends and the same plane is connected, and the other end is connected with described supporting construction (201).
Described reflector composite structure (203) is a pair of material platy structure, and wherein the side towards described transparent substrates (1) is metal level, is used for the visible light of reading light path that reflection matches with described uncooled infrared imaging focal plane array detector; Opposite side is the absorption layer with higher Infrared Absorption Coefficient, is used for absorbing the infrared radiation from target object.Described metal level lower surface directly contacts with the absorption layer upper surface.In certain embodiments, described reflector composite structure (203) can adopt aluminium or gold etc. can reflect the material of the visible light of reading light path that matches with described uncooled infrared imaging focal plane array detector towards a side of transparent substrates (1), and opposite side can adopt the higher material of the Infrared Absorption Coefficients such as silicon nitride or monox to make.
Referring to Fig. 4, described thermal deformation structure (202) comprises the first thermal deformation beam (204), the second thermal deformation beam (205) and hot isolation beams (206).Described the first thermal deformation beam (204), the second thermal deformation beam (205) and hot isolation beams (206) be in turn inflection connection in same plane.
Described the first thermal deformation beam (204) and the second thermal deformation beam (205) are two Material cladding beams, the bi-material that consists of described the first thermal deformation beam (204) is identical with the bi-material that consists of described the second thermal deformation beam (205), but the thermal expansivity of this bi-material is different.In the Available Material scope, preferably select the larger bi-material of thermal expansion coefficient difference to make, and the thermal expansion coefficient difference of bi-material is the bigger the better.And the Thickness Ratio of the beam that described bi-material consists of should make described deformation beam form maximum deformation under certain deck-siding, certain beam length, uniform temperature situation of change.
For example, in a certain embodiment, beam length is that 38 microns, deck-siding are 1 micron, during 3 ℃ of temperature variation, and 0.29 micron of the terminal length travel of beam, deflection angle is about 0.44 °.
As previously mentioned, described the first thermal deformation beam (204) and the second thermal deformation beam (205) are two Material cladding beams, among the utility model embodiment, consist of on perpendicular to the direction of transparent substrates (1), the stacking according to opposite order of bi-material of described the first deformation beam (204) and the second deformation beam (205).For example, among certain embodiment, described the first deformation beam (204) and described the second deformation beam (205) consist of double-material beam by monox and aluminium, and wherein aluminium is the high material of thermal expansivity, the material that the monox thermal expansivity is relatively low.The monox thermal expansivity is 0.5E-6K -1, aluminium is 23.5E-6K -1The aluminium of described the first deformation beam (204) is towards transparent substrates (1), and monox is below aluminium; The monox of described the second deformation beam (205) is towards transparent substrates (1), and aluminium is below monox.
Described hot isolation beams (206) can adopt the material identical with described supporting construction (201) to make.
So-called optic readable thermal imaging system based on MEMS is specially: the micro-cantilever array that adopts the MEMS technology to process is converted into emittance as the absorbing structure of infrared radiation the heat energy of probe unit; Described heat energy is converted into the deflection angle (perhaps displacement) of described micro-cantilever by the double-material beam structure that is covered in the metallic film formation on the described micro-cantilever, this deflection angle can be detected by the light path of reading that matches with described uncooled infrared imaging focal plane array detector.
Particularly, when the uncooled infrared imaging focal plane array detector that utilizes the utility model embodiment to provide is caught the infrared target view, described uncooled infrared imaging focal plane array detector and supportingly with it read the light path collaborative work, the described emergent light of reading light path sees through transparent substrates (1) and is radiated on the metal level of described reflector composite structure (203), sees through again transparent substrates (1) after reflecting and continues in the described light path internal delivery of reading.
The absorption layer head for target object of described reflector composite structure (203).After the infrared radiation from target object arrives described micro-cantilever unit (2), the absorption layer of described reflector composite structure (203) absorbs the infrared energy that described target object gives off raises the temperature of described reflector composite structure (203), and the infrared energy that the absorption layer of described reflector composite structure (203) absorbs conducts along thermal deformation structure (202).Because two kinds of composition materials of described the first thermal deformation beam (204) are identical with two kinds of composition materials of described the second thermal deformation beam (205), and these two kinds of composition materials are perpendicular to the reversed in order that stacks on the direction of described transparent substrates (1), thereby described the first thermal deformation beam (204) and described the second thermal deformation beam (205) have produced rightabout deformation under the effect of the infrared energy that the absorption layer of described reflector composite structure (203) absorbs.The rightabout deformation that described the first thermal deformation beam (204) and the second thermal deformation beam produce drives described reflector composite structure (203) and rotates, even also the metal level of reflector composite structure (203) deflects, forms a deflection angle.This deflection angle can be detected by the light path of reading that matches with described uncooled infrared imaging focal plane array detector.
Because the material overlay order of the first thermal deformation beam (204) and the second thermal deformation beam (205) is opposite, therefore, the deformation opposite direction of described the first thermal deformation beam (204) and the second thermal deformation beam (205), the deflection angle of reflector composite structure (203) is enlarged into 2 times of single thermal deformation beam deflection angle, has improved the temperature-responsive of micro-cantilever unit (2).
Because the energy correlation that the deflection angle of the metal level of described reflector composite structure (203) and described micro-cantilever unit (2) absorb, and the energy that described micro-cantilever unit (2) absorbs is relevant with the infrared intensity of target object, so can obtain the correlationship of deflection angle and corresponding target object infrared intensity of the metal level of described reflector composite structure (203) by the uncooled infrared imaging focal plane array detector that the utility model embodiment provides.Thereby, the described non-refrigerate infrared focal plane array seeker that the utility model embodiment provides can be converted into the infrared view of target object focal plane array and list each pixel infrared absorption in various degree and the metal level deflection angle of visible light composite structure (203), and this deflection angle is detected by the light path of reading that matches with described uncooled infrared imaging focal plane array detector.The CCD that the described emergent ray of reading light path is detected in the light path receives, and forms image.So far, the infrared signal of target object is converted into the visible light signal of CCD, and human eye can be identified.
What match with described uncooled infrared imaging focal plane array detector reads light path when the deflection angle to described metal level detects, launch incident ray by reading light path, and receive the deflection angle that the reflection ray that goes out through this metal layer reflection calculates described metal level.Target object can not with read light path and be positioned at the same side, this be because if target object with read light path and be positioned at the same side, the Infrared that target object sends also will be by described metal layer reflection, can't realize the detection of object.
Read the light of light path in the prior art to substrate, especially silicon substrate, opaque, this has just determined to read light path must place non-substrate place one side (namely with detector in the same side), target object have to be placed on substrate place one side, and this infrared light that causes target object to send must be through inciding on the detector by substrate.The uncooled infrared imaging focal plane array detector that the utility model embodiment provides, by using transparent substrates (this substrate pair light of reading in the light path that matches with described uncooled infrared imaging focal plane array detector is transparent), no longer be defined so that read the position of light path, target object also can be positioned at non-substrate place, plane, detector place one side.Particularly, in the utility model embodiment, the metal level of reflector composite structure (203) is towards transparent substrates (1), when target object is detected, shine directly on the metal level of reflector composite structure (203) by transparent substrates (1) from the incident ray of reading light path, from the infrared light direct irradiation of target object on the absorption layer of the reflector composite structure (203) of non-refrigerate infrared focal plane array seeker, avoided silicon substrate for from the blocking and reflect the energy loss that causes of the infrared light of target object, but the Effective Raise detection sensitivity; Simultaneously, also need not substrate is carried out hollow out, avoided making the required long-time bulk silicon etching technique of full engraved structure, simplify and make flow process, improve the finished product rate.
Above to a kind of detector provided by the utility model, be described in detail, used specific case herein principle of the present utility model and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present utility model and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present utility model, all will change in specific embodiments and applications, in sum, this description should not be construed as restriction of the present utility model.

Claims (8)

1. a uncooled infrared imaging focal plane array detector is characterized in that, comprises transparent substrates (1) and is tiled in a plurality of micro-cantilevers unit (2) on the described transparent substrates (1) in non-nested mode; Described transparent substrates (1) is transparent to the light of reading light path that matches with described uncooled infrared imaging focal plane array detector.
2. uncooled infrared imaging focal plane array detector according to claim 1, it is characterized in that, described micro-cantilever unit (2) comprises supporting construction (201), thermal deformation structure (202) and reflector composite structure (203), described thermal deformation structure (202) has two groups, lay respectively at the both sides of described reflector composite structure (203), described reflector composite structure (203) in described thermal deformation structure (202) one ends and the same plane is connected, and the other end is connected with described supporting construction (201).
3. uncooled infrared imaging focal plane array detector according to claim 2 is characterized in that, described micro-cantilever unit (2) is anchored by described supporting construction (201) and described transparent substrates (1).
4. uncooled infrared imaging focal plane array detector according to claim 2, it is characterized in that, described thermal deformation structure (202) comprises the first thermal deformation beam (204), the second thermal deformation beam (205) and hot isolation beams (206), and described the first thermal deformation beam (204), the second thermal deformation beam (205) and hot isolation beams (206) be in turn inflection connection in same plane.
5. uncooled infrared imaging focal plane array detector according to claim 4, it is characterized in that, described the first thermal deformation beam (204) and the second thermal deformation beam (205) are two Material cladding beams, the bi-material that consists of described the first thermal deformation beam (204) is identical with the bi-material that consists of described the second thermal deformation beam (205), and the thermal expansivity of this bi-material is different.
6. uncooled infrared imaging focal plane array detector according to claim 5, it is characterized in that, the bi-material that consists of the first thermal deformation beam (204) and the second thermal deformation beam (205) stacks according to opposite order on perpendicular to the direction of described transparent substrates (1).
7. uncooled infrared imaging focal plane array detector according to claim 2 is characterized in that, described reflector composite structure (203) is one tabular pair of material structure.
8. uncooled infrared imaging focal plane array detector according to claim 2 is characterized in that, described reflector composite structure (203) is metal level towards a side of described transparent substrates (1), and opposite side is absorption layer; Described metal level lower surface directly contacts with described absorption layer upper surface.
CN 201220517971 2012-10-10 2012-10-10 Uncooled infrared imaging focal plane array detector Expired - Lifetime CN202836765U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220517971 CN202836765U (en) 2012-10-10 2012-10-10 Uncooled infrared imaging focal plane array detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220517971 CN202836765U (en) 2012-10-10 2012-10-10 Uncooled infrared imaging focal plane array detector

Publications (1)

Publication Number Publication Date
CN202836765U true CN202836765U (en) 2013-03-27

Family

ID=47948448

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220517971 Expired - Lifetime CN202836765U (en) 2012-10-10 2012-10-10 Uncooled infrared imaging focal plane array detector

Country Status (1)

Country Link
CN (1) CN202836765U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103631470A (en) * 2013-12-13 2014-03-12 中国人民解放军国防科学技术大学 Distance input system and method based on infrared reflection type photoelectric detection dot matrix
CN103728025A (en) * 2012-10-10 2014-04-16 中国科学院微电子研究所 Uncooled infrared imaging focal plane array detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103728025A (en) * 2012-10-10 2014-04-16 中国科学院微电子研究所 Uncooled infrared imaging focal plane array detector
CN103631470A (en) * 2013-12-13 2014-03-12 中国人民解放军国防科学技术大学 Distance input system and method based on infrared reflection type photoelectric detection dot matrix

Similar Documents

Publication Publication Date Title
CN101802576B (en) Infrared sensor, focal plane array and infrared imaging system thereof
KR101910575B1 (en) Infrared detector and infrared image sensor
CN101285709B (en) Optical mechanics infrared imager based on Hartmann wavefront sensor
KR101910573B1 (en) Infrared detector including broadband light absorber
CN104458011A (en) Full waveband infrared focal plane array based on MEMS technology
CN103575403A (en) Terahertz focal plane array based on MEMS technology
CN104792420A (en) Optical readout focal plane array and preparation method thereof
CN100594175C (en) Optical-mechanical double-layer structure uncooled infrared imaging focal plane array detector
CN100453443C (en) Glass substrate optical display infra-red sensor
CN106595876B (en) Pixel integrating active element and optical reference element and microbolometer
CN102874735B (en) Two-material micro-cantilever, electromagnetic radiation detector and detection method
CN102435319A (en) Uncooled infrared detector
CN103033269A (en) Infrared thermal detector and method of manufacturing the same
CN105527026A (en) Pixel unit, infrared imaging detector provided with pixel unit and manufacturing process
CN202734967U (en) Uncooled infrared imaging focal plane array detector
US8440972B2 (en) Radiation detector with microstructured silicon
CN103592032A (en) Uncooled infrared imaging focal plane array detector
CN202836765U (en) Uncooled infrared imaging focal plane array detector
CN202924718U (en) Double-material micro-cantilever and electromagnetic radiation detector
CN101866031B (en) Optical readout method utilizing fiber optics bundle to carry out modulation
CN203116855U (en) Uncooled infrared imaging focal plane array detector
CN106949978A (en) A kind of thermal imaging sensor pixel cell and its array
CN103728025A (en) Uncooled infrared imaging focal plane array detector
CN103630246A (en) Uncooled infrared imaging focal plane array detector
CN100581986C (en) Uncooled infrared imaging focal plane array detector

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20180223

Address after: 101407 Beijing city Huairou District Yanqi Yanqi Economic Development Zone South four Street No. 25 Building No. 3 hospital No. 307

Patentee after: Beijing Zhongke Micro Intellectual Property Service Co.,Ltd.

Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3

Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190930

Address after: 310000 B1, 11th Floor, 3911 Binsheng Road, Binjiang District, Hangzhou City, Zhejiang Province

Co-patentee after: Cao Ming

Patentee after: I-LAND TECHNOLOGY CO.,LTD.

Co-patentee after: Zhang Ping

Co-patentee after: He Junqiang

Co-patentee after: Xiang Bin

Co-patentee after: Guo Shikai

Co-patentee after: Guo Yulong

Co-patentee after: Mao Jinyang

Co-patentee after: Chen Weizhong

Co-patentee after: Li Hong

Address before: 101407 Beijing city Huairou District Yanqi Yanqi Economic Development Zone South four Street No. 25 Building No. 3 hospital No. 307

Patentee before: Beijing Zhongke Micro Intellectual Property Service Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20191125

Address after: 310000 B1, 11th Floor, 3911 Binsheng Road, Binjiang District, Hangzhou City, Zhejiang Province

Patentee after: I-LAND TECHNOLOGY CO.,LTD.

Address before: 310000 B1, 11th Floor, 3911 Binsheng Road, Binjiang District, Hangzhou City, Zhejiang Province

Co-patentee before: Cao Ming

Patentee before: I-LAND TECHNOLOGY CO.,LTD.

Co-patentee before: Zhang Ping

Co-patentee before: He Junqiang

Co-patentee before: Xiang Bin

Co-patentee before: Guo Shikai

Co-patentee before: Guo Yulong

Co-patentee before: Mao Jinyang

Co-patentee before: Chen Weizhong

Co-patentee before: Li Hong

TR01 Transfer of patent right
CX01 Expiry of patent term

Granted publication date: 20130327

CX01 Expiry of patent term