CN103759838B - Infrared detector with micro-bridge structure and manufacture method thereof - Google Patents
Infrared detector with micro-bridge structure and manufacture method thereof Download PDFInfo
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- CN103759838B CN103759838B CN201410013619.6A CN201410013619A CN103759838B CN 103759838 B CN103759838 B CN 103759838B CN 201410013619 A CN201410013619 A CN 201410013619A CN 103759838 B CN103759838 B CN 103759838B
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Abstract
The present invention provides a kind of infrared detector with micro-bridge structure and manufacture method thereof. Described detector comprises: sensing circuit substrate, micro-bridge bridge leg, thermally sensitive layer, infrared reflecting layer and infrared absorption layer. Described infrared absorption layer supports the top being arranged at described thermally sensitive layer, and forms the resonator cavity for incident infrared light with described infrared reflecting layer, and described micro-bridge bridge leg is placed in below infrared reflecting layer, and forms electricity with sensing circuit substrate and link. Said structure can increase device ir-absorbance while device thermal conductance reducing, it is to increase the filling ratio of device, solves resonator cavity defect, thus improves the hot isolation effect of device and responsiveness, optimized device performance.
Description
Technical field
The invention belongs to field of micro electromechanical technology, it is specifically related to infrared detector with micro-bridge structure and the manufacture method thereof of a kind of multilayer.
Background technology
Infrared eye of the prior art adopts integrated MEMS micro-bridge structure on cmos circuit, utilizes sensitive material detection layer (being generally non-crystalline silicon or vanadium oxide) absorb infrared rays and convert it into electrical signal, realizes thermal imaging function accordingly. The main developing direction of current infrared eye is for reducing pixel structure size and increases array sizes, improves the image resolution rate of detector, expands the range of application of infrared eye, and the level of its MEMS manufacturing process has become the principal element of limit product performance. The micro-bridge structure of infrared eye narrows down to 17*17 micron pixel structure now from early stage 100*100 micron. The stress that little pixel structure can reduce film does not mate and strengthens sensitivity and the resolving power of detector; In addition, for identical array scale, little pixel structure means less detector and Lens, such that it is able to reduce weight and the size of infrared thermal imagery instrument system, increases the portability of thermal infrared imager.
It it is a kind of typical individual layer micro-bridge structure schematic diagram in prior art shown in accompanying drawing 1, comprise substrate 10, the infrared reflecting layer 11 on substrate 10 surface, bridge floor 12 are arranged on the surface of described infrared reflecting layer 11, and by forming resonator cavity 14 with bridge leg 13 by medium layer 16 lateral brace, it is inner that infrared absorption layer 15 is arranged at described bridge floor 12. The advantage of the micro-bridge of individual layer is that structure is simple, it is easy to manufacture, but shortcoming is bridge leg 13 and bridge floor 12 is in same plane, when amassing certain as first micro-bridge floor, increase when picture unit bridge leg length improves thermal resistance and must reduce the effective infrared absorption area of micro-bridge, thus be difficult to improve infrared Absorption rate while reducing device thermal conductance. Particularly along with pixel dimension reduces gradually, little size detector more and more limits to as meta design space, and its textural defect is more and more significant, limits the further raising of device performance.
The design of double-deck micro-bridge structure proposes as the contradiction between unit's infrared Absorption useful area and device thermal conductance for solving in the single sacrifice layer micro-bridge structure of tradition. It it is a kind of typical double-deck micro-bridge structure schematic diagram in prior art shown in accompanying drawing 2, comprise substrate 20, the infrared reflecting layer 21 on substrate 20 surface, bridge floor 22 are arranged on the surface of described infrared reflecting layer 21, and by forming resonator cavity 24 with bridge leg 23 longitudinal ligament, it is inner that infrared absorption layer 25 is arranged at described bridge floor 22. The emphasis of bilayer structure design is separated completely at the bridge leg 23 place plane of infrared reflecting layer 21 with thermal isolation, it is made no longer to influence each other, but this kind of structure also existing defects, namely the resonator cavity 24 that big area infrared absorption layer 25 and infrared reflecting layer 21 are formed has pressed from both sides bridge leg 23, bridge leg 23 can affect the resonance effect of infrared incident light wave, reduces infrared absorption efficiency.
Therefore, it is proposed to a kind of micro-bridge structure with high-selenium corn efficiency is prior art problem demanding prompt solution.
Summary of the invention
Technical problem to be solved by this invention is, it is provided that a kind of infrared detector with micro-bridge structure and manufacture method thereof with high-selenium corn efficiency.
In order to solve the problem, the present invention provides a kind of infrared detector with micro-bridge structure, comprising: substrate, and the upper surface of described substrate is provided with electrode; Bridge leg, described bridge leg adopts electro-conductive material to make, and described bridge leg supports and is arranged at above described substrate, and point of suppon is positioned at the electrode place of described substrate top surface, thus is connected with described electrode electricity; Thermally sensitive layer, described thermally sensitive layer is arranged at above described bridge leg, and supporting, by the electrical connection support being arranged in described thermally sensitive layer through hole, the surface being arranged at described bridge leg, described electrical connection support is used for described thermally sensitive layer and is connected with described bridge leg and then the electricity with described electrode; Infrared reflecting layer, described infrared reflecting layer is arranged between described bridge leg and described thermally sensitive layer, and by the lower surface laminating of medium layer and described thermally sensitive layer overhanging portion; Infrared absorption layer, described infrared absorption layer supports the surface being arranged at described thermally sensitive layer, absorbing incident infrared light, change into heat conduction to described responsive layer, described infrared absorption layer forms the resonator cavity for incident infrared light with described infrared reflecting layer further.
Optionally, the body part of described bridge leg is in first plane parallel with substrate, and supports, by the support being certainly bent to form, the surface being arranged at described electrode.
Optionally, described thermally sensitive layer is in the 2nd plane parallel with substrate with the body part of electrical connection support, and described electrical connection support supports, by the support being certainly bent to form, the surface being arranged at described bridge leg further.
Optionally, the body part of described infrared absorption layer is in the 3rd plane parallel with substrate, and supports, by the support being certainly bent to form, the surface being arranged at described thermally sensitive layer.
Optionally, the surface of described substrate, bridge leg, thermally sensitive layer and infrared absorption layer has tectum further.
Optionally, the material of described bridge leg be selected from titanium, titanium nitride and tantalum any one.
Optionally, the material of described thermally sensitive layer be selected from non-crystalline silicon and vanadium oxide any one.
Optionally, the material of described electrical connection support be selected from titanium, tantalum, nickel, chromium, titanium nitride and nichrome any one.
Optionally, the material of described infrared reflecting layer be selected from aluminium, silver and gold any one.
Optionally, the material of described infrared absorption layer be selected from titanium nitride and nichrome any one.
Invention further provides the making method of a kind of infrared detector with micro-bridge structure, comprise the steps: to provide substrate, in the surface of described substrate, be provided with electrode; Making bridge leg at substrate surface, the overhanging portion of described bridge leg is by being separated between the first sacrifice layer with described substrate; Making patterned infrared reflecting layer on bridge leg surface, described infrared reflecting layer is by being separated between the 2nd sacrifice layer with described bridge leg; At the surface making medium layer of described infrared reflecting layer; At the electrical connection support that described medium layer surface makes thermally sensitive layer and is connected with thermally sensitive layer, described electrical connection support is formed in the through hole in described thermally sensitive layer, through gap and the medium layer of described patterned infrared reflecting layer, support the surface being arranged at described bridge leg; At the surface making infrared absorption layer of described thermally sensitive layer, the overhanging portion of described infrared absorption layer is by being separated between the 3rd sacrifice layer and described thermally sensitive layer; Remove described first sacrifice layer, the 2nd sacrifice layer and the 3rd sacrifice layer, thus make bridge leg, infrared reflecting layer, thermally sensitive layer and infrared absorption layer segment unsettled, and described infrared absorption layer and described infrared reflecting layer form the resonator cavity for incident infrared light, and described thermally sensitive layer is arranged in described resonator cavity.
Optionally, the body part of described bridge leg is in first plane parallel with substrate, and supports, by the support being certainly bent to form, the surface being arranged at described electrode.
Optionally, described thermally sensitive layer is in the 2nd plane parallel with substrate with the body part of electrical connection support, and described electrical connection support supports, by the support being certainly bent to form, the surface being arranged at described bridge leg further.
Optionally, the body part of described infrared absorption layer is in the 3rd plane parallel with substrate, and supports, by the support being certainly bent to form, the surface being arranged at described thermally sensitive layer.
It is an advantage of the current invention that, the form of bridge leg and infrared reflecting layer, infrared absorption layer hierarchial design, effectively increase the design space of little size picture dot, device ir-absorbance is increased while reducing device thermal conductance, improve the filling ratio of device, solve resonator cavity defect, thus improve the hot isolation effect of device and responsiveness, optimized device performance.
Accompanying drawing explanation
It it is a kind of typical individual layer micro-bridge structure schematic diagram in prior art shown in accompanying drawing 1;
It it is a kind of typical double-deck micro-bridge structure schematic diagram in prior art shown in accompanying drawing 2;
It it is the manufacture craft schematic diagram of micro-bridge infrared eye described in the specific embodiment of the invention shown in accompanying drawing 3;
Accompanying drawing 4A is to the process schematic representation shown in accompanying drawing 4G being this embodiment.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of infrared detector with micro-bridge structure provided by the invention and manufacture method thereof is elaborated.
Being the manufacture craft schematic diagram of micro-bridge infrared eye described in the specific embodiment of the invention shown in accompanying drawing 3, comprising: step S30, it is provided that substrate, the upper surface of described substrate is provided with electrode; Step S31, makes bridge leg at substrate surface, and the overhanging portion of described bridge leg is by being separated between the first sacrifice layer with described substrate; Step S32, makes patterned infrared reflecting layer on bridge leg surface, and described infrared reflecting layer is by being separated between the 2nd sacrifice layer with described bridge leg; Step S33, at the surface making medium layer of described infrared reflecting layer; Step S34, at the electrical connection support that described medium layer surface makes thermally sensitive layer and is connected with thermally sensitive layer, described electrical connection support is formed in the through hole in described thermally sensitive layer, through gap and the medium layer of described patterned infrared reflecting layer, supports the surface being arranged at described bridge leg; Step S35, at the surface making infrared absorption layer of described thermally sensitive layer, the overhanging portion of described infrared absorption layer is by being separated between the 3rd sacrifice layer and described thermally sensitive layer; Step S36, remove described first sacrifice layer, the 2nd sacrifice layer and the 3rd sacrifice layer, thus make bridge leg, infrared reflecting layer, thermally sensitive layer and infrared absorption layer segment unsettled, and described infrared absorption layer and described infrared reflecting layer form the resonator cavity for incident infrared light.
Accompanying drawing 4A is to the process schematic representation shown in accompanying drawing 4G being this embodiment.
Shown in accompanying drawing 4A, refer step S30, it is provided that substrate 400, is provided with electrode in the upper surface of described substrate 400, and this embodiment is for electrode 411,412. In other concrete mode, the number of electrode and position can adjust according to the shape of detector and structure. The material of described substrate 400 can be any one the conventional substrate material comprising silicon single crystal. The material of electrode 411 and 412 can be metal. Electrode 411 and 412 realizes the electrical connection between the sensing circuit in detector and substrate 400. Sensing circuit (not shown) in substrate 400 was completed in substrate 400 by standard CMOS process before making detector. First tectum 491 is arranged between electrode 411 and 412, with the electric isolation ensured between electrode. The material of the first tectum 491 can be such as silicon oxide or silicon nitride etc.
Shown in accompanying drawing 4B, refer step S31, makes bridge leg 420 on substrate 400 surface, and the overhanging portion of described bridge leg 420 is by being separated between the first sacrifice layer 481 with described substrate 400. In order to protect bridge leg 420, making growth regulation two tectum 492 before bridge leg 420 further, and after bridge leg 420 makes growth regulation three tectum 493. The effect of the 2nd tectum 492 and the 3rd tectum 493 is after the first sacrifice layer 481 is removed and discharges the structure of bridge leg 420, it is possible to played a protective role on the surface of bridge leg 420. The material of the first sacrifice layer 481 can be non-crystalline silicon, polyimide, polysilicon etc. The material of described 2nd tectum 492 and the 3rd tectum 493 can be such as silicon oxide or silicon nitride etc.
In this embodiment, the body part of described bridge leg 420 is in a first plane A parallel with substrate 400, and is arranged on the electrode 411 and 412 on described substrate 400 surface by supporting from the support being bent to form. In other embodiment, the body part of described bridge leg 420 can also realize support function by pillar or other rigid structure. Described bridge leg 420 should select the electro-conductive material of low heat conductivity, be such as selected from titanium, titanium nitride and tantalum any one. The heat selecting low thermally conductive material to be possible to prevent in described substrate 400 is diffused in infrared eye by described bridge leg 420.
Shown in accompanying drawing 4C, refer step S32, makes patterned infrared reflecting layer 430 on bridge leg 420 surface, and described infrared reflecting layer 430 is by being separated between the 2nd sacrifice layer 482 with described bridge leg 420. The described patterned object of infrared reflecting layer 430 is that the electrical connection support of follow-up making can be contacted with bridge leg 420 by the gap between figure, forms the mechanical support to the infrared-sensitive parts in resonator cavity, and can the electrical signal that produce be derived. The material of described 2nd sacrifice layer 482 can be non-crystalline silicon, polyimide, polysilicon etc. The material of described infrared reflecting layer 430 should be the material that infrared light has high-reflectivity, it is possible to be selected from aluminium, silver and gold any one.
Shown in accompanying drawing 4D, refer step S33, at the surface making medium layer 440 of described infrared reflecting layer 430. Owing to the 2nd sacrifice layer 482 to be removed, therefore infrared reflecting layer 430 can be attached to the surface of other parts by medium layer 440, and infrared reflecting layer 430 and other parts are played electric isolation effect by medium layer 440 further. The material of medium layer 440 can be such as individual layer or the lamination layer structure of the materials such as silicon oxide, silicon nitride and polysilicon.
Shown in accompanying drawing 4E, refer step S34, at the electrical connection support 460 that described medium layer 440 surface makes thermally sensitive layer 450 and is connected with thermally sensitive layer 450, described electrical connection support 460 is arranged in the through hole of thermally sensitive layer 450, and pass gap and the medium layer 440 of described patterned infrared reflecting layer 430, support the surface being arranged at described bridge leg 420. Infrared reflecting layer 430 is attached to the lower surface of thermally sensitive layer 450 by medium layer 440, it is ensured that after the 2nd sacrifice layer 482 is removed, infrared reflecting layer 430 is unlikely to come off. And medium layer 440 serves the electric isolation effect between infrared reflecting layer 430 and thermally sensitive layer 450.
The material of described thermally sensitive layer 450 be selected from non-crystalline silicon and vanadium oxide any one, the effect of this layer be absorb ir radiation produce heat and convert it into electrical signal. Due to mechanically coupled together by described electrical connection support 460 between described thermally sensitive layer 450 and described bridge leg 420, therefore similar with described bridge leg 420, the material of described electrical connection support 460 should be low heat conductivity electro-conductive material, such as, can be any one that be selected from titanium, tantalum, nickel, chromium, titanium nitride and nichrome.
In this embodiment, thermally sensitive layer 450 is in a 2nd plane B parallel with substrate 400 with the body part of electrical connection support 460, and described electrical connection support 460 supports, by the support being certainly bent to form, the surface being arranged at described bridge leg 420 further. In other embodiment, described electrical connection support 460 can also realize support function by pillar or other rigid structure.
Shown in accompanying drawing 4F, refer step S35, at the surface making infrared absorption layer 470 of described thermally sensitive layer 450, the overhanging portion of described infrared absorption layer 470 is by being separated between the 3rd sacrifice layer 483 with described thermally sensitive layer 450. The material of described 3rd sacrifice layer 483 can be non-crystalline silicon, polyimide, polysilicon etc.
The material of described infrared absorption layer 470 is selected from any one thin-film material in titanium nitride and nichrome, the square resistance of its thin-film material is in left and right, 377 ohm of every sides, maximizing improves infrared absorption effect, the body part of described infrared absorption layer 470 is in the 3rd plane C parallel with substrate 400, and supports, by the support being certainly bent to form, the surface being arranged at described thermally sensitive layer 450. In other embodiment, the body part of described infrared absorption layer 470 can also realize support function by pillar or other rigid structure. Infrared absorption layer 470 can absorb incident infrared light and change into heat, and heat conducts to thermally sensitive layer 450 by the contact part of infrared absorption layer 470 and thermally sensitive layer 450 further, and converts it into electrical signal by thermally sensitive layer 450.
In order to protect described thermally sensitive layer 450, can first at surface making the 4th tectum 494 of described thermally sensitive layer 450 before making the 3rd sacrifice layer 483. In order to protect described infrared absorption layer 470, can first make the 5th tectum 495 before making described infrared absorption layer 470, and the 6th tectum 496 can be made after making described infrared absorption layer 470. The material of described 4th tectum 494, the 5th tectum 495 and the 6th tectum 496 can be such as silicon oxide or silicon nitride etc.
Shown in accompanying drawing 4G, refer step S36, remove described first sacrifice layer 481, the 2nd sacrifice layer 482 and the 3rd sacrifice layer 483, thus make bridge leg 420, infrared reflecting layer 430, thermally sensitive layer 450 and infrared absorption layer 470 part unsettled, and described infrared absorption layer 470 forms the resonator cavity for incident infrared light with described infrared reflecting layer 430, and described thermally sensitive layer 450 is arranged in described resonator cavity. The method of selective corrosion or selective dissolution can be adopted to remove described first sacrifice layer 481, the 2nd sacrifice layer 482 and the 3rd sacrifice layer 483. The resonator cavity that described infrared absorption layer 470 is formed with described infrared reflecting layer 430, it is along the degree of depth being perpendicular to substrate 400 direction, namely the degree of depth along incident light direction should be the 1/4 of directs optical wavelength, to form the incident resonator cavity of infrared waves, strengthen the ir-absorbance of thermally sensitive layer 450.
With reference to the structural representation being infrared detector with micro-bridge structure described in this embodiment shown in accompanying drawing 4G, comprise substrate 400, bridge leg 420, infrared reflecting layer 430, thermally sensitive layer 450 and infrared absorption layer 470. The upper surface of described 400 substrates is provided with electrode. Described bridge leg 420 adopts electro-conductive material to make, and described bridge leg 420 supports and is arranged at above described substrate 400, and point of suppon is positioned at electrode 411 and 412 place of described substrate 400 upper surface, thus is connected with described electrode 411 and 412 electricity. Described thermally sensitive layer 450 is arranged at above described bridge leg 420, and the surface being arranged at described bridge leg 420 is supported by the electrical connection support 460 that is arranged in described thermally sensitive layer 450 through hole, described electrical connection support 460 is connected for the electricity of described thermally sensitive layer 450 with described bridge leg 420 and then with described electrode 411 and 412. Described infrared reflecting layer 430 is arranged between described bridge leg 420 and described thermally sensitive layer 450, and is fitted by the lower surface of medium layer 440 with described thermally sensitive layer 450 overhanging portion. Described infrared absorption layer 470 supports the top being arranged at described thermally sensitive layer 450, and forms the resonator cavity for incident infrared light with described infrared reflecting layer 430, and described thermally sensitive layer 450 is arranged in described resonator cavity.
The advantage of said structure is the form of described bridge leg 420 with described infrared reflecting layer 430, infrared absorption layer 470 hierarchial design. Described infrared absorption layer 470 has almost been covered with all horizontal spaces of device, and described thermally sensitive layer 450 is except being preserved for except the space of described electrical connection support 460, also all horizontal spaces being almost covered with device, so said structure effectively increases the design space of little size picture dot. Described infrared absorption layer 470 and special infrared reflecting layer 430 form the resonator cavity for incident infrared light, strengthen infrared absorption efficiency. Described thermally sensitive layer 450 and described bridge leg 420 are isolated, and avoid heat effect to the impact of described thermally sensitive layer 450. Therefore said structure can increase device ir-absorbance while device thermal conductance reducing, it is to increase the filling ratio of device, solve resonator cavity defect, thus improve the hot isolation effect of device and responsiveness, optimized device performance.
The above is only the preferred embodiment of the present invention; it is noted that for those skilled in the art, under the premise without departing from the principles of the invention; can also making some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (14)
1. an infrared detector with micro-bridge structure, it is characterised in that, comprising:
Substrate, the upper surface of described substrate is provided with electrode;
Bridge leg, described bridge leg adopts electro-conductive material to make, and described bridge leg supports and is arranged at above described substrate, and point of suppon is positioned at the electrode place of described substrate top surface, thus is connected with described electrode electricity;
Thermally sensitive layer, described thermally sensitive layer is arranged at above described bridge leg, and supporting, by the electrical connection support being arranged in described thermally sensitive layer through hole, the surface being arranged at described bridge leg, described electrical connection support is used for described thermally sensitive layer and is connected with described bridge leg and then the electricity with described electrode;
Infrared reflecting layer, described infrared reflecting layer is arranged between described bridge leg and described thermally sensitive layer, and by the lower surface laminating of medium layer and described thermally sensitive layer overhanging portion;
Infrared absorption layer, described infrared absorption layer supports the surface being arranged at described thermally sensitive layer, absorbing incident infrared light, change into heat conduction to described thermally sensitive layer, described infrared absorption layer forms the resonator cavity for incident infrared light with described infrared reflecting layer further.
2. infrared detector with micro-bridge structure according to claim 1, it is characterised in that, the body part of described bridge leg is in first plane parallel with substrate, and supports, by the support being certainly bent to form, the surface being arranged at described electrode.
3. infrared detector with micro-bridge structure according to claim 1, it is characterized in that, described thermally sensitive layer is in the 2nd plane parallel with substrate with the body part of electrical connection support, and described electrical connection support supports, by the support being certainly bent to form, the surface being arranged at described bridge leg further.
4. infrared detector with micro-bridge structure according to claim 1, it is characterised in that, the body part of described infrared absorption layer is in the 3rd plane parallel with substrate, and supports, by the support being certainly bent to form, the surface being arranged at described thermally sensitive layer.
5. infrared detector with micro-bridge structure according to claim 1, it is characterised in that, the surface of described substrate, bridge leg, thermally sensitive layer and infrared absorption layer has tectum further.
6. infrared detector with micro-bridge structure according to claim 1, it is characterised in that, the material of described bridge leg be selected from titanium, titanium nitride and tantalum any one.
7. infrared detector with micro-bridge structure according to claim 1, it is characterised in that, the material of described thermally sensitive layer be selected from non-crystalline silicon and vanadium oxide any one.
8. infrared detector with micro-bridge structure according to claim 1, it is characterised in that, the material of described electrical connection support be selected from titanium, tantalum, nickel, chromium, titanium nitride and nichrome any one.
9. infrared detector with micro-bridge structure according to claim 1, it is characterised in that, the material of described infrared reflecting layer be selected from aluminium, silver and gold any one.
10. infrared detector with micro-bridge structure according to claim 1, it is characterised in that, the material of described infrared absorption layer be selected from titanium nitride and nichrome any one.
The making method of 11. 1 kinds of infrared detector with micro-bridge structure, it is characterised in that, comprise the steps:
Substrate is provided, in the surface of described substrate, is provided with electrode;
Making bridge leg at substrate surface, the overhanging portion of described bridge leg is by being separated between the first sacrifice layer with described substrate;
Making patterned infrared reflecting layer on bridge leg surface, described infrared reflecting layer is by being separated between the 2nd sacrifice layer with described bridge leg;
At the surface making medium layer of described infrared reflecting layer;
At the electrical connection support that described medium layer surface makes thermally sensitive layer and is connected with thermally sensitive layer, described electrical connection support is formed in the through hole in described thermally sensitive layer, through gap and the medium layer of described patterned infrared reflecting layer, support the surface being arranged at described bridge leg;
At the surface making infrared absorption layer of described thermally sensitive layer, the overhanging portion of described infrared absorption layer is by being separated between the 3rd sacrifice layer and described thermally sensitive layer;
Remove described first sacrifice layer, the 2nd sacrifice layer and the 3rd sacrifice layer, thus make bridge leg, infrared reflecting layer, thermally sensitive layer and infrared absorption layer segment unsettled, and described infrared absorption layer and described infrared reflecting layer form the resonator cavity for incident infrared light.
The making method of 12. infrared detector with micro-bridge structure according to claim 11, it is characterised in that, the body part of described bridge leg is in first plane parallel with substrate, and supports, by the support being certainly bent to form, the surface being arranged at described electrode.
The making method of 13. infrared detector with micro-bridge structure according to claim 11, it is characterized in that, described thermally sensitive layer is in the 2nd plane parallel with substrate with the body part of electrical connection support, and described electrical connection support supports, by the support being certainly bent to form, the surface being arranged at described bridge leg further.
The making method of 14. infrared detector with micro-bridge structure according to claim 11, it is characterized in that, the body part of described infrared absorption layer is in the 3rd plane parallel with substrate, and supports, by the support being certainly bent to form, the surface being arranged at described thermally sensitive layer.
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| CN114112055B (en) * | 2021-03-26 | 2023-07-07 | 北京北方高业科技有限公司 | Infrared detector based on CMOS technology and preparation method thereof |
| CN113252184B (en) * | 2021-03-30 | 2023-04-18 | 武汉高芯科技有限公司 | Low 1/f noise detector, pixel thereof and method for reducing 1/f noise of uncooled detector |
| CN113390513B (en) * | 2021-06-11 | 2022-10-25 | 哈尔滨工业大学 | Three-layer pixel structure of micro bolometer |
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| US6552344B1 (en) * | 1999-11-30 | 2003-04-22 | Mitsubishi Denki Kabushiki Kaisha | Infrared detector and method of making the infrared detector |
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