CN103630246A - Uncooled infrared imaging focal plane array detector - Google Patents
Uncooled infrared imaging focal plane array detector Download PDFInfo
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- CN103630246A CN103630246A CN201210303612.9A CN201210303612A CN103630246A CN 103630246 A CN103630246 A CN 103630246A CN 201210303612 A CN201210303612 A CN 201210303612A CN 103630246 A CN103630246 A CN 103630246A
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- 238000012546 transfer Methods 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 9
- 239000007769 metal material Substances 0.000 claims abstract description 4
- 238000010276 construction Methods 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
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Abstract
The embodiment of the invention provides an uncooled infrared focal plane array detector, which comprises: the micro-cantilever unit is laid on the transparent substrate through the substrate heat transfer structure in a non-nested mode; the micro-cantilever unit comprises a thermal deformation structure, a reflector composite structure and a support structure; the reflecting plate composite structure adopts a dual-material structure, wherein one side facing the transparent substrate is made of a metal material, and the layer facing the target object is made of a material with a high infrared absorption coefficient. When the detector is used for detecting a target object, infrared light from the target object directly irradiates on an infrared absorption layer of the detector, so that the measurement sensitivity is improved. In addition, due to the adoption of the transparent substrate, the substrate below the micro-cantilever unit does not need to be hollowed, and the process complexity is reduced.
Description
Technical field
The present invention relates to infrared imaging detector technical field, relate in particular to a kind of uncooled infrared imaging focal plane array detector.
Background technology
All temperature all can produce infrared radiation higher than the object of absolute zero, and the intensity of this radiation and energy distribution relevant with object temperature, be loaded with the characteristic information of object.By the infrared radiation of inspected object, the sightless infrared view of the mankind can be converted into visible image.
Common infrared detection device generally can be divided into two kinds of quantum type infrared radiation detector and heat type infrared radiation detectors.Wherein quantum type infrared eye is converted into electron energy by the photon energy of infrared radiation, and thermal type infrared detector is to change to catch infrared information by detecting the detector temperature that the infrared radiation of target object causes.
Because the excited electron energy of infrared light photon is suitable with the Electron Heat kinergety under room temperature, so the infrared eye of quantum type need to use liquid nitrogen (77K) refrigeration to suppress Electron Heat motion, and this causes quantum type infrared eye expensive.
Thermal type infrared detector, without liquid nitrogen refrigerating, has greatly reduced cost of manufacture, makes infrared technique large-area applications become possibility.The common detector based on thermoelectric effect work, because input current can produce additional heat on detector cells, so this detector is difficult to accurately detect the infrared radiation of incident, the existence of plain conductor simultaneously makes heat isolation difficulty between unit, limited temperature rise performance, and thermoelectric effect is all very faint, this sensing circuit that just need to coordinate with it has high signal to noise ratio (S/N ratio) and gain, this has not only increased difficult design, and has improved device cost.The light of should use up-mechanical principle is read un-cooled infrared focal plane array, mostly adopt two Material Cantilever Beam array structures, after detecting unit absorbs incident infrared light, temperature raises, concurrent raw heat deformation, by the deformation of optical pickup system non-contact detecting, just obtained the infrared information of target again.The detector that light is read is without interconnected wire, and between unit, heat isolation is more prone to, and has also saved the designing and making of sensing circuit, greatly reduces cost of development.
The light adopting is at present read Uncooled focal plane array row and conventionally on silicon substrate, is made, and comprises plurality of layers of double Material Cantilever Beam heat insulation structure and the two Material Cantilever Beam heat insulation structures of hollow out individual layer with sacrifice layer.The former need to retain silicon substrate, then when infrared ray process silicon substrate, can be because of the infrared light of reflex loss 40%, this will reduce detector sensitivity; Though the latter is reflected without silicon substrate, the utilization factor of infrared radiation is very high, yet this structure needs long-time back of the body chamber etching process and reliably stress control technique are made full engraved structure array on voucher film, manufacture craft is had to very high requirement, simultaneously this figure utilization factor is low, is difficult to further reduce elemental area and improve resolution.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of uncooled infrared imaging focal plane array detector, this detector comprises: transparent substrates, the substrate heat transfer structure with high thermal conductivity coefficient and micro-cantilever unit, wherein, described micro-cantilever unit is laid in described transparent substrates by described substrate heat transfer structure with non-nested mode;
Described micro-cantilever unit comprises thermal deformation structure, reflector composite structure and supporting construction;
Described supporting construction and described thermal deformation structure respectively have two groups, lay respectively at the both sides of described reflector composite structure, and every group of thermal deformation structure one end is connected with described supporting construction, and one end is connected with described reflector composite structure;
Described reflector composite structure adopts two material structures, wherein, made, and one deck of head for target object is made by the material with high IR absorption coefficient towards a side of described transparent substrates by metal material.
When the uncooled infrared imaging focal plane array detector providing by the embodiment of the present invention detects target object, from the infrared light direct irradiation of target object on the infrared absorption layer of detector, avoid the loss of the energy that silicon substrate causes for the reflection of infrared radiation from target object, thereby improved the sensitivity of measuring.The second, due to the transparent substrates that this detector adopts, target object can be placed in the non-substrate of plane place, detector place one side, thereby without the substrate of below, micro-cantilever unit is emptied, has reduced process complexity, and improved the yield rate of product.The 3rd, because this detector has substrate heat transfer structure, the heat having lowered between micro-cantilever unit is crosstalked, thereby reduced detector operating ambient temperature, changes the impact for measurement result, is conducive to improve image quality.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the disclosure, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
A kind of uncooled infrared imaging focal plane array detector structural representation that Fig. 1 provides for the embodiment of the present invention;
The array structure schematic diagram being formed by a plurality of micro-cantilevers unit and a plurality of substrate heat transfer structure in the uncooled infrared imaging focal plane array detector that Fig. 2 provides for the embodiment of the present invention;
The structural representation of micro-cantilever unit in the uncooled infrared imaging focal plane array detector that Fig. 3 provides for the embodiment of the present invention;
The structural representation of thermal deformation structure in the uncooled infrared imaging focal plane array detector that Fig. 4 provides for the embodiment of the present invention.
Embodiment
In order to make those skilled in the art person understand better the technical scheme in the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only disclosure part embodiment, rather than whole embodiment.Embodiment based in the disclosure, those of ordinary skills are not making the every other embodiment obtaining under creative work prerequisite, all should belong to the scope of disclosure protection.
The structural representation of the uncooled infrared imaging focal plane array detector that as shown in Figure 1, Fig. 1 provides for the embodiment of the present invention.
This detector comprises transparent substrates 11, substrate heat transfer structure 12 and micro-cantilever unit 13.Wherein, a plurality of micro-cantilevers unit 13 is laid in transparent substrates 11 by substrate heat transfer structure 12 in non-nested mode, and substrate heat transfer structure 12 directly contacts with transparent substrates 11, micro-cantilever unit 13 respectively.
In addition, in the technical scheme providing in the embodiment of the present invention, the 11 pairs of visible transparent of transparent substrates in this detector, especially transparent to reading the light of light path in infrared imaging system; For the heat reducing between adjacent micro-cantilever unit 13 is crosstalked, the material require of making substrate heat transfer structure 12 has higher thermal conductivity coefficient.
By Fig. 1, also can be found out, this micro-cantilever unit 13 comprises supporting construction 131, thermal deformation structure 132 and reflector composite structure 133.
As shown in Figure 2, the array structure schematic diagram being formed by a plurality of micro-cantilevers unit 13 and substrate heat transfer structure 12 in the detector that Fig. 2 provides for the embodiment of the present invention.
Wherein, supporting construction 131 forms the anchor point between micro-cantilever unit 13 and substrate heat transfer structure 12, and the material of making this structure has lower thermal conductivity coefficient, and the heat being beneficial between micro-cantilever unit 13 is isolated.
As shown in Figure 3, micro-cantilever unit 13 structural representations in the uncooled infrared imaging focal plane array detector that Fig. 3 provides for the embodiment of the present invention.
In micro-cantilever unit 13, supporting construction 131 and thermal deformation structure 132 respectively have a pair of, are positioned at the both sides of reflector composite structure 133;
And reflector composite structure 133 forms semi-girder with thermal deformation structure 132, and is connected in substrate heat transfer structure 12 by supporting construction 131 anchor points;
In the embodiment of the present invention, related reflector composite structure 133 is by the made rectangular plate-like structure of bi-material, wherein, and towards being made by metal material of transparent substrates 11 1 sides, and for reflecting from the visible ray of reading light path; Being made by the material with high IR absorption coefficient of head for target object one side, and for absorbing the infrared radiation from target object, be the infrared absorption layer of this detector.
As shown in Figure 4, thermal deformation structure 132 structural representations in the uncooled infrared imaging focal plane array detector that Fig. 4 provides for the embodiment of the present invention.
Wherein, this thermal deformation structure 132 comprises hot isolation beams 1321 and thermal deformation beam 1322, and this hot isolation beams 1321 interval inflection in same plane is connected with thermal deformation beam 1322.Hot isolation beams 1321 adopts the lower material of thermal conductivity coefficient to be made, for increasing the heat isolation between micro-cantilever unit 13.And thermal deformation beam 1322 is two Material cladding beams, bi-material thermal expansion coefficient difference is compared with large and Young modulus differs as far as possible little, and the selection of the Thickness Ratio of this bi-material according to for when temperature change value one regularly, the deformation quantity of this thermal deformation beam 1322 is maximum.For example, when making thermal deformation beam 1322, metal can be attached on nonmetal film, and when the bi-material thickness to thermal deformation beam 1322 is selected, thereby obtain the highest sensitivity in order to make thermal deformation beam 1322 reach maximum distortion, the ratio of bi-material thickness can approach the inverse ratio square root of bi-material Young modulus, and the gross thickness of beam should be as far as possible little under the prerequisite that meets process conditions and supporting condition.
When the uncooled infrared imaging focal plane array detector that specifically the making disclosure provides, transparent substrates 11 can adopt glass substrate or Sapphire Substrate.The material that substrate heat transfer structure 12 can have a high thermal conductivity coefficient by chromium, aluminium or gold etc. is made.The material that supporting construction 131 in micro-cantilever unit 13 can have a low thermal conductivity coefficient by silicon nitride or monox etc. is made, for carrying out the heat isolation of unit.A side towards transparent substrates 11 in reflector composite structure 133 can adopt the material that aluminium or gold etc. can reflect the visible ray of reading light path to make.And a side of head for target object can adopt silicon nitride or monox etc. to have the material making compared with high IR absorption coefficient in reflector composite structure 133.In addition, the material that the hot isolation beams 1321 of thermal deformation structure 132 also can adopt silicon nitride or monox etc. to have low thermal conductivity coefficient is made.As previously mentioned, thermal deformation beam 1322 is made compared with material large and that Young modulus differs as far as possible little by two kinds of thermal expansion coefficient differences, conventionally can adopt the combinations of materials such as monox/aluminium or silicon nitride/gold to form, for example on monox, adhere to one deck rate film, or on silicon nitride, adhere to layer of gold film etc.
When using non-refrigerate infrared focal plane array seeker that the embodiment of the present invention provides to catch infrared target view, this detector and supportingly read light path and refrigerating ring collaborative work.And refrigerating ring contacts with the substrate heat transfer structure 12 of this detector, control the basic and room temperature of the cold junction temperature of each micro-cantilever unit 13 on detector and be consistent, with the heat reducing between each micro-cantilever unit 13, crosstalk.
When catching infrared target view, this detector is positioned to be read in light path, the transparent substrates 11 that the emergent light of reading light path sees through transparent detector is radiated on the metal level of reflector composite structure 133, sees through again transparent substrates 11 continuation and transmit in light path after reflecting.And reach after the micro-cantilever 13 of detector when the infrared radiation from target object, reflector composite structure 133 absorbs infrared energy, temperature raises, and cause the thermal deformation beam 1322 in thermal deformation structure 132 that deformation occurs, drive reflector composite structure 133 to rotate, that is to say, the reflector of reading in light path deflects, and the deflection angle that this deflection angle can be read light path by detection obtains.
Because the rotational angle of reflector composite structure 133 is relevant with the energy that micro-cantilever unit 13 absorbs, and the caloric receptivity of micro-cantilever unit 13 is relevant with the infrared intensity of target object, the relation between the deflection angle that can obtain thus reflector composite structure 133 and corresponding target object infrared intensity.Finally, the charge-coupled device (CCD) (Charge Coupled Device, CCD) of reading in the detected light path of light in light path receives, and forms image.So far, the infrared signal of target object is converted into the visible light signal of CCD, completes infrared view to the conversion of the discernible visible ray view of human eye.
While utilizing uncooled infrared imaging focal plane array detector that the embodiment of the present invention provides to detect target object, from the infrared light direct irradiation of target object on the infrared absorption layer of detector, avoid the loss of the energy that silicon substrate causes for the reflection of infrared radiation from target object, thereby improved the sensitivity of measuring.The second, due to the transparent substrates that this detector adopts, target object can be placed in the non-substrate of plane place, detector place one side, thereby without the substrate of below, micro-cantilever unit is emptied, has reduced process complexity, and improved the yield rate of product.The 3rd, because this detector has substrate heat transfer structure, the heat having lowered between micro-cantilever unit is crosstalked, thereby reduced detector operating ambient temperature, changes the impact for measurement result, is conducive to improve image quality.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a uncooled infrared imaging focal plane array detector, it is characterized in that, comprise: transparent substrates, the substrate heat transfer structure with high thermal conductivity coefficient and micro-cantilever unit, wherein, described micro-cantilever unit is laid in described transparent substrates by described substrate heat transfer structure in non-nested mode;
Described micro-cantilever unit comprises thermal deformation structure, reflector composite structure and supporting construction;
Described supporting construction and described thermal deformation structure respectively have two groups, lay respectively at the both sides of described reflector composite structure, and every group of thermal deformation structure one end is connected with described supporting construction, and one end is connected with described reflector composite structure;
Described reflector composite structure adopts two material structures, wherein, made, and one deck of head for target object is made by the material with high IR absorption coefficient towards a side of described transparent substrates by metal material.
2. uncooled infrared imaging focal plane array detector according to claim 1, is characterized in that, described transparent substrates is glass substrate or Sapphire Substrate.
3. uncooled infrared imaging focal plane array detector according to claim 1, is characterized in that, described substrate heat transfer structure is made by chromium, aluminium or gold.
4. uncooled infrared imaging focal plane array detector according to claim 1, is characterized in that, described reflector composite structure adopts aluminium or gold to be made towards a side of described transparent substrates; One side of described reflector composite structure head for target object adopts silicon nitride or monox to be made.
5. according to the uncooled infrared imaging focal plane array detector described in any one in claim 1 to 4, it is characterized in that, described supporting construction adopts the material with low thermal conductivity coefficient to be made.
6. according to the uncooled infrared imaging focal plane array detector described in any one in claim 1 to 4, it is characterized in that, described thermal deformation structure comprises hot isolation beams and thermal deformation beam.
7. uncooled infrared imaging focal plane array detector according to claim 6, is characterized in that, interval inflection in same plane is connected described hot isolation beams with described thermal deformation beam.
8. uncooled infrared imaging focal plane array detector according to claim 6, is characterized in that, described hot isolation beams adopts the material with low thermal conductivity coefficient to be made.
9. uncooled infrared imaging focal plane array detector according to claim 6, is characterized in that, described thermal deformation beam is two material structures, and bi-material expansion coefficient difference is compared with large and Young modulus difference is less.
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| CN201210303612.9A CN103630246A (en) | 2012-08-23 | 2012-08-23 | Uncooled infrared imaging focal plane array detector |
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Cited By (3)
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| CN103913241A (en) * | 2014-04-29 | 2014-07-09 | 昆山光微电子有限公司 | Non refrigeration non base optical readout infrared FPA detector temperature control structure and method |
| CN103922270A (en) * | 2014-04-25 | 2014-07-16 | 昆山光微电子有限公司 | Uncooled optical readout infrared focal plane array structure and manufacturing method |
| CN106949978A (en) * | 2017-02-13 | 2017-07-14 | 清华大学 | A kind of thermal imaging sensor pixel cell and its array |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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